MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002T


MOSFET N Trench 60V 115mA 2V @ 250uA 7.5 Ω @ 50mA,5V SC-75 (SOT-523) RoHS
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Changjing Electronics Technology 26500
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AUD 0.0328
Multiples of: 20

                   
IRL40B212


Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
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Infineon 10670
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AUD 2.2991
Multiples of: 1

            hexfet®      
NVMTSC1D3N08M7TXG


MOSFET PT7 80V DC PQFN8*8 EXPANSION
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ON Semiconductor 10670
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AUD 4.3371
Multiples of: 1

           Cut Tape       
FQPF70N10


mosfet n trench 100v 35a 4v @ 250ua 23 m @ 17.5a,10v to-220f (to-220is) rohs
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ON Semiconductor 10658
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AUD 1.951
Multiples of: 1

                   
DMC2004VK-7


20V 550mO@540mA,4.5V 1W 1PCSN-Channel&1PCSP-Channel SOT-563 MOSFETs ROHS
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Diodes Incorporated 10644
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AUD 0.2464
Multiples of: 1

670 mA20 V400 mOhmsN - Channel, P - Channel  - 65 C+ 150 C400 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V Enhancement  
TSM038N03PQ33 RGG


MOSFET Power MOSFET, N-CHAN 30V, 80A, 3.8mOhm
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Taiwan Semiconductor 10644
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AUD 0.3944
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80 A30 V2.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C66 WSmd/SmtPDFN33 - 8Cut TapeSi1 Channel10 V24 nCEnhancement  
NTNS3166NZT5G


MOSFET NFET SOT883 20V 361MA 0.7
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ON Semiconductor 10642
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AUD 0.1294
Multiples of: 1

           ReelSi      
EM6K7T2CR


Mosfet Array 2 N-Channel (Dual) 20V 200mA (Ta) 150mW Surface Mount EMT6
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ROHM 10606
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AUD 0.0905
Multiples of: 5

200 mA20 V1.2 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V-Enhancement  
SI8487DB-T1-E1


MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6
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Vishay 10579
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AUD 0.418
Multiples of: 1

7.7 A30 V25 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.7 WSmd/SmtMICRO - FOOT - 4Cut TapeSi1 Channel12 V80 nCEnhancement Trenchfet
Hot IRF7343TRPBF


MOSFET N & P Trench 55V 4.7A,3.4A 1V @ 250uA 50 mΩ @ 4.7A,10V SOIC-8_150mil RoHS
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Infineon 8504
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between Fri. 17 Jul to Wed. 22 Jul Calender.png

AUD 0.4348
Multiples of: 1

4.7 A55 V65 mOhmsN And P - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
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