MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC005N03LS5IATMA1


MOSFET TRENCH <= 40V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 10919
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AUD 1.4234
Multiples of: 1

433 A30 V550 uOhmsN - Channel 1.5 V- 55 C+ 175 C188 WSMD/SMTTDSON - 8 - FLCut Tape , ReelSi1 Channel- 20 V , + 20 V122 nCEnhancement  
SiR5623DP-T1-RE3


MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 24 mohm a. 10V, 46 mohm a. 4.5V
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Vishay 10918
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AUD 1.2013
Multiples of: 1

37.1 A60 V24 mOhmsP - Channel 2.6 V- 55 C+ 150 C59.5 WSMD/SMTPOWERPAK SO - 8 Si1 Channel- 20 V , + 20 V21.8 nCEnhancement  
IRF530PBF-BE3


MOSFET 100V N-CH
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Vishay 10914
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AUD 1.0405
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14 A100 V160 mOhmsN - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V26 nCEnhancement  
TN2130K1-G


Transistor: N-MOSFET; unipolar; 300V; 0.25A; 360mW; SOT23-3
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Microchip 10895
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AUD 0.5549
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85 mA300 V25 OhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel20 V Enhancement  
FDMS5352


Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
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ON Semiconductor 10893
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AUD 2.2698
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            Powertrench®      
DMP3028LSD-13


30V 6A 1.3W 25mO@10V,7A 2 P-Channel SO-8 MOSFETs ROHS
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Diodes Incorporated 10889
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AUD 0.3808
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6 A30 V25 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSO - 8ReelSi2 Channel- 10 V22 nCEnhancement  
BSD214SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
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Infineon 10882
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AUD 0.0804
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            Optimos 2      
IPD90N06S407ATMA2


MOSFET MOSFET
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Infineon 10860
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AUD 0.9921
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
BSC0502NSIATMA1


DFN-8 MOSFETs ROHS
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Infineon 10848
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AUD 0.8764
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           Cut Tape       
DMG2305UXQ-7


20V 4.2A 52mO@4.5V,4.2A 1.4W P Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 808
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AUD 0.1231
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4.2 A20 V52 mOhmsP - Channel 500 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V10.2 nCEnhancementAec - Q101 
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