MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PNM723T703E0-2


MOSFET N Trench 40V 180mA 1.5V @ 250uA 7.5 Ω @ 500mA,10V SOT-723 RoHS
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Prisemi 29546
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AUD 0.0203
Multiples of: 20

                   
DMTH6016LFDFW-7


MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
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Diodes Incorporated 10221
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AUD 0.4271
Multiples of: 1

9.4 A60 V18 mOhmsN - Channel 1 V- 55 C+ 175 C2.3 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel20 V15.3 nCEnhancement  
PJM2301PSA


MOSFET P Trench 20V 2.8A 1V @ 250uA 110 mΩ @ 2.8A,4.5V SOT-23 RoHS
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Pingjingsemi 10204
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AUD 0.0168
Multiples of: 20

                   
FDMS0300S


Fairchild Semiconductor MOSFET
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ON Semiconductor 10202
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AUD 1.3184
Multiples of: 1

   N - Channel     Smd/SmtPOWER - 56 - 8ReelSi2 Channel    Powertrench Syncfet
TSM038N03PQ33 RGG


MOSFET Power MOSFET, N-CHAN 30V, 80A, 3.8mOhm
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Taiwan Semiconductor 10200
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AUD 0.3991
Multiples of: 1

80 A30 V2.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C66 WSmd/SmtPDFN33 - 8Cut TapeSi1 Channel10 V24 nCEnhancement  
SI7716ADN-T1-GE3


MOSFET 30V 16A 27.7W 13.5mohm @ 10V
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Vishay 10197
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AUD 0.3302
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
AP3404


SOT23 MOSFETs ROHS
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Quan Li 10194
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AUD 0.0613
Multiples of: 10

                   
IRFB7437PBF


MOSFET N Trench 40V 195A (Tc) 3.9V @ 150uA 2 mΩ @ 100A,10V TO-220AB RoHS
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Infineon 10181
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AUD 0.7182
Multiples of: 1

250 A40 V2 mOhmsN - Channel    230 WThrough HoleTO - 220 - 3TubeSi 20 V225 nC  Strongirfet
IRLML6401TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 7187
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AUD 0.0608
Multiples of: 10

                   
SSM6P15FE(TE85L,F)


Mosfet Array 2 P-Channel (Dual) 30V 100mA 150mW Surface Mount ES6
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Toshiba 3880
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AUD 0.1461
Multiples of: 4000

100 mA30 V8 OhmsP - Channel 1.7 V + 150 C150 mWSmd/SmtES6 - 6-Si2 Channel20 V Enhancement  
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