MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2300A


MOSFET N Trench 20V 6A 1V @ 50uA 25 mΩ @ 6A,4.5V SOT-23 RoHS
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Youtai 11553
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AUD 0.0212
Multiples of: 20

                   
FDD8453LZ_F085


Fairchild Semiconductor MOSFET 40V N-Channel POWER TRENCH MOSFET
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ON Semiconductor 11550
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AUD 0.99
Multiples of: 1

50 A40 V5 mOhmsN - Channel  - 55 C+ 175 C118 WSmd/SmtDPAK - 3ReelSi1 Channel20 V60 nC  Powertrench
TMP4080NF


PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS 11544
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AUD 0.4297
Multiples of: 1

                   
US6M2GTR


MOSFET 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode
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ROHM 11533
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AUD 0.45
Multiples of: 1

1.5 A , 1 A30 v , 20 V170 mOhms , 280 mOhmsN - Channel, P - Channel 1.5 v , 2 V + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi2 Channel4.5 V1.6 nC , 2.1 nCEnhancement  
DMHC6070LSD-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 11529
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AUD 0.7403
Multiples of: 1

         Smd/SmtSO - 8Cut TapeSi      
TSM2N7002AKCU RFG


MOSFET 60V, 0.24A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 11524
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AUD 0.1038
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240 mA60 V2.5 OhmsN - Channel 2.5 V- 55 C+ 150 C SMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V680 pCEnhancement  
BSZ240N12NS3 G


Infineon Technologies MOSFET N-Ch 120V 37A TSDSON-8 OptiMOS 3
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Infineon 11509
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AUD 1.2175
Multiples of: 1

37 A120 V24 mOhmsN - Channel     Smd/SmtTSDSON - 8ReelSi1 Channel    Optimos
2N7002Q-7-F


Trans MOSFET N-CH 60V 0.21A Automotive 3-Pin SOT-23 T/R
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Diodes Incorporated 11504
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AUD 0.0534
Multiples of: 10

0.21 A  N    0.54 WSurface Mount Tape And Reel    Enhancement  
IRF7341TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 11504
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AUD 0.205
Multiples of: 5

                   
SI4825DDY-T1-GE3


MOSFET 30V 14.9A 5.0W 12.5mohm @ 10V
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Vishay 11410
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AUD 0.3973
Multiples of: 1

14.9 A30 V12.5 mOhmsP - Channel 1.4 V- 55 C+ 150 C5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel10 V57 nCEnhancement Trenchfet
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