MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSJ250P10FRATL


MOSFET Pch -100V Vds -25A 0.05Rds(on) 60Qg
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ROHM 10320
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AUD 1.3813
Multiples of: 1

25 A100 V45 mOhmsP - Channel 1 V + 150 C50 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel10 V60 nCEnhancementAec - Q101 
FDC658AP


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 10311
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AUD 0.1067
Multiples of: 5

                   
BUK9Y104-100B,115


MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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Nexperia 10311
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AUD 0.3944
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14.8 A100 V99 mOhmsN - Channel 1.65 V- 55 C+ 175 C59 WSmd/SmtLFPAK - 4ReelSi1 Channel15 V11 nCEnhancement  
SI4178DY-T1-GE3


MOSFET 30V Vds 25V Vgs SO-8
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Vishay 10301
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AUD 0.2185
Multiples of: 5

12 A30 V21 mOhmsN - Channel 1.4 V- 55 C+ 150 C5 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V7.5 nCEnhancement Trenchfet
BSC036NE7NS3GATMA1


Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8
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Infineon 10289
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AUD 1.2163
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            Optimos 3      
ISC037N12NM6ATMA1


MOSFETs N
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Infineon 10280
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AUD 2.4829
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163 A120 V3.7 mOhmsN - Channel 3.6 V- 55 C+ 175 C214 WSMD/SMTTDSON - 8FLReel , Cut TapeSi1 Channel- 20 V , + 20 V46 nCEnhancement OptiMOS
AO3415


20V 5.6A 42mΩ@4.5V,5A 1.3W 620mV@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 10272
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AUD 0.0382
Multiples of: 10

                   
SI2319DS-T1-GE3


Vishay Semiconductors MOSFET 40V 3.0A 1.25W 82mohm 10V
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Vishay 10028
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AUD 0.4656
Multiples of: 1

2.3 A- 40 V82 mOhmsP - Channel 1 V- 55 C+ 150 C750 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V11.3 nCEnhancement Trenchfet
IRFB7440PBF


Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
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Infineon 8369
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AUD 0.556
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120 A40 V2.5 mOhmsN - Channel    208 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V135 nCEnhancement Strongirfet
DMG1012T-7


20V 500mA 700mΩ@4.5V,600mA 150mW 900mV@250uA N Channel SOT-523 MOSFETs ROHS
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Yongyutai Electronics 8264
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AUD 0.0251
Multiples of: 20

                   
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