MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSZ0902NSI


Infineon Technologies MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
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Infineon 11114
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AUD 0.8087
Multiples of: 1

40 A30 V2.8 mOhmsN - Channel20 V2.2 V- 55 C+ 150 C48 WSmd/SmtTDSON - 8ReelSi1 Channel20 V12.2 nCEnhancement Optimos
CMUDM8001 TR


MOSFET P-Ch Enh Mode FET 20Vds 10Vgs 250mW
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Central Semiconductor 11063
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AUD 0.2279
Multiples of: 3000

   P - Channel     Smd/SmtSOT - 523ReelSi1 Channel    Ultramini
SSM6J507NU,LF(T


Trans MOSFET P-CH Si 30V 10A 6-Pin UDFN EP T/R
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Toshiba 11037
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AUD 0.5996
Multiples of: 1

                   
IPT020N10N5ATMA1


100V 2mO@150A,10V 273W N Channel HSOF-8-1 MOSFETs ROHS
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Infineon 11035
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AUD 2.7186
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BSC320N20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
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Infineon 10987
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AUD 1.5871
Multiples of: 1

            Optimos 3      
BSL211SPH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
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Infineon 10866
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AUD 0.2955
Multiples of: 1

4.7 A20 V94 mOhmsP - Channel 900 mV- 55 C+ 150 C2 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V12.4 nCEnhancement  
SI4178DY-T1-GE3


MOSFET 30V Vds 25V Vgs SO-8
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Vishay 10864
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AUD 0.2488
Multiples of: 5

12 A30 V21 mOhmsN - Channel 1.4 V- 55 C+ 150 C5 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V7.5 nCEnhancement Trenchfet
FDD8870


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 10737
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AUD 1.1665
Multiples of: 1

160 A30 V3.9 mOhmsN - Channel  - 55 C+ 175 C160 WSmd/SmtTO - 252AAReelSi1 Channel20 V Enhancement Powertrench
PMDXB600UNEZ


NXP Semiconductors MOSFET 20 V, dual N-channel Trench MOSFET
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Nexperia 9588
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AUD 0.1239
Multiples of: 5

600 mA , 600 mA20 v , 20 V3 Ohms , 3 OhmsN - Channel 450 mV , 450 mV- 55 C+ 150 C380 mWSmd/SmtDFN1010B - 6ReelSi2 Channel+/- 8 v , +/- 8 V0.4 nCEnhancement  
CJ3415 R15


MOSFET P Trench 20V 4A 1V @ 250uA 50 mΩ @ 4A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 2337
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AUD 0.0514
Multiples of: 10

                   
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