MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002W


MOSFET MOSFET, SOT-323, 60V, 0.115A, N, 0.2W
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Diotec 11449
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AUD 0.0197
Multiples of: 1

115 mA60 V13.5 OhmsN - Channel 2.5 V + 150 C200 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V Enhancement 2N7002W
AO3400


30V 5.8A 28mO@10V,2.9A 1.4W N Channel SOT-23 MOSFETs ROHS
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LGE 11446
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AUD 0.0413
Multiples of: 10

                   
AO4409


SOP-8 MOSFETs ROHS
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TECH PUBLIC 11431
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AUD 0.1998
Multiples of: 5

                   
IPA086N10N3 G


MOSFET N-Ch 100V 45A TO220FP-3 OptiMOS 3
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Infineon 11401
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AUD 1.196
Multiples of: 1

45 A100 V8.6 mOhmsN - Channel  - 55 C+ 175 C37.5 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V14 nCEnhancement Optimos
RK7002BM


SOT-23 MOSFETs ROHS
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TECH PUBLIC 11397
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AUD 0.0174
Multiples of: 50

                   
AO3400


SOT-23-3L MOSFETs ROHS
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FOSAN 11387
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AUD 0.0199
Multiples of: 20

                   
BSC061N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 82A; 74W; PG-TDSON-8
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Infineon 11383
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AUD 1.3183
Multiples of: 1

            Optimos 5      
SSM6K824R,LF


MOSFETs TSOP6F S-MOS(LF)
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Toshiba 11344
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AUD 0.1875
Multiples of: 1

           ReelSi      
NTGD4167CT1G


MOSFET COMP 30V 2.9A 0.090 TSOP6
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ON Semiconductor 11332
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AUD 0.2748
Multiples of: 3000

2.6 A , 1.9 A30 V90 mOhms , 300 mOhmsN And P - Channel 500 mV- 55 C+ 150 C1.1 WSmd/SmtTSOP - 6ReelSi2 Channel4.5 v , - 2.5 V3.7 nC , 3.9 nCEnhancement  
IRFBF20PBF-BE3


N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay 11324
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AUD 2.0677
Multiples of: 1

1.7 A900 V8 OhmsN - Channel 4 V- 55 C+ 150 C54 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V38 nCEnhancement  
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