MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM300NB06CV RGG


MOSFETs 60V, 22A, Single N-Channel Automotive MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 9583
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AUD 0.3834
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22 A60 V30 mOhmsN - Channel 3.8 V- 55 C+ 150 C30 WSMD/SMTPDFN33Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancementAEC - Q101 
SSM3J16CT,L3F


MOSFET X34 Pb-F CST3 S-MOS (LF) TRANSISTOR Pd 100mW F 1MHz
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Toshiba 9578
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AUD 0.0927
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100 mA20 V8 OhmsP - Channel 600 mV-+ 150 C100 mWSMD/SMTCST3 - 3 Si1 Channel- 10 V , + 20 V-Enhancement  
TSM070NH04LCV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9576
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AUD 0.6003
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54 A40 V N - Channel 2.2 V- 55 C+ 150 C36 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 16 V , + 16 V24 nCEnhancement PerFET
IPN60R2K1CEATMA1


Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223
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Infineon 9569
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AUD 0.2341
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            Coolmos Ce      
TQM250NB06CV RGG


MOSFETs 60V, 26A, Single N-Channel Automotive MOSFETs
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Taiwan Semiconductor 9569
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AUD 0.4227
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26 A60 V25 mOhmsN - Channel 3.8 V- 55 C+ 150 C36 WSMD/SMTPDFN33Reel , Cut TapeSi1 Channel- 20 V , + 20 V19 nCEnhancementAEC - Q101 
LP137N3T5G


null 0.9A P Channel SOT-883-3 MOSFETs ROHS
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Leshan 9564
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AUD 0.1337
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WNM6012-3/TR


DFN-3L(1x0.6) MOSFETs ROHS
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Will Semiconductor 9564
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AUD 0.028
Multiples of: 20

                   
PMH550UNEH


MOSFET 30 V N-channel Trench MOSFET
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Nexperia 9525
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AUD 0.1084
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770 mA30 V670 mOhmsN - Channel 0.45 V- 55 C+ 150 C710 mWSmd/SmtDFN - 0606 - 3Cut TapeSi1 Channel8 V0.4 nCEnhancement  
HSBB4052


MOSFET N Channel 40V 43A 2.5V @ 250uA 8.5mO @ 12A,10V PRPAK3x3 RoHS
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HUASHUO 9457
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AUD 0.1701
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Hot IRFB3077PBF


MOSFET N Trench 75V 120A 4V @ 250uA 3.3 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 9128
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AUD 1.1971
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210 A75 V2.8 mOhmsN - Channel    370 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V160 nC   
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