MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUCN04S7N005ATMA1


MOSFETs N
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Infineon 10406
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AUD 2.2338
Multiples of: 1

414 A40 V550 uOhmsN - Channel 2.6 V- 55 C+ 175 C179 WSMD/SMTTDSON - 8Reel , Cut TapeSi - 20 V , + 20 V98 nCEnhancement  
APM9435


30V 5.3A 50mΩ@20V,5.3A P Channel SOP-8 MOSFETs ROHS
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Quan Li 10398
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AUD 0.1199
Multiples of: 10

                   
DMN10H700S-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 10394
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AUD 0.1013
Multiples of: 1

  700 mOhmsN - Channel     Smd/SmtSOT - 23 - 3Cut TapeSi      
BSZ086P03NS3EGATMA1


Infineon Technologies MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
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Infineon 10384
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AUD 0.4941
Multiples of: 1

40 A30 V6.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V57.5 nCEnhancement  
RSQ015P10HZGTR


MOSFET PCH -100V -1.5A SMALL SIGNAL M
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ROHM 10370
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AUD 0.48
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1.5 A100 V470 mOhmsP - Channel - 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSC - 95 - 6Cut TapeSi1 Channel20 V17 nCEnhancementAec - Q101 
DMN26D0UT-7


MOSFET N-Ch -20V VDSS 230mA 300mW
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Diodes Incorporated 10359
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AUD 0.0319
Multiples of: 20

230 mA20 V3 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel4.5 V Enhancement  
ZXMN2B01FTA


MOSFET 20V N-Channel MOSFET w/low gate drive cap
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Diodes Incorporated 10358
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AUD 0.3143
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   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
NTD25P03LG


TO-252 MOSFETs ROHS
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TECH PUBLIC 10354
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AUD 0.2262
Multiples of: 5

                   
NTS2101PT1G


SOT-323 MOSFETs ROHS
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TECH PUBLIC 10349
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AUD 0.0467
Multiples of: 10

                   
BS270


MOSFET N-Channel MOSFET
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ON Semiconductor 10340
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AUD 0.1855
Multiples of: 250

400 mA60 V2 OhmsN - Channel  - 55 C+ 150 C630 mWThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
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