MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQJ459EP-T2_BE3


MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 9951
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AUD 0.7826
Multiples of: 1

52 A60 V18 mOhmsP - Channel 2.5 V- 55 C+ 175 C83 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V73 nCEnhancement TrenchFET
AUIRFB3806


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms
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Infineon 9942
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AUD 1.1101
Multiples of: 1

43 A60 V15.8 mOhmsN - Channel    71 WThrough HoleTO - 220 - 3TubeSi1 Channel 22 nC   
IPN70R360P7SAUMA1


MOSFET
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Infineon 9935
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AUD 0.6279
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12.5 A700 V360 mOhmsN - Channel 3.5 V- 40 C+ 150 C7.2 WSMD/SMTSOT - 223 - 3Cut Tape , ReelSi1 Channel- 16 V , + 16 V16.4 nCEnhancement  
NVMFS5C420NLWFT1G


MOSFET T6 40V LL
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ON Semiconductor 9935
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AUD 2.6557
Multiples of: 1

277 A40 V1 mOhmsN - Channel 2.2 V- 55 C+ 175 C146 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , 20 V100 nCEnhancement  
ZXMN3B01FTA


MOSFET 30V N Chnl UMOS
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Diodes Incorporated 9903
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AUD 0.1273
Multiples of: 5

2 A30 V150 mOhmsN - Channel12 V0.7 V- 55 C+ 150 C625 mWSmd/SmtSOT - 23 - 3Reel   2.93 nCEnhancement  
DMN6040SSD-13


MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
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Diodes Incorporated 9782
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AUD 0.279
Multiples of: 5

5 A60 V40 mOhmsN - Channel 1 V- 55 C+ 150 C1.7 WSmd/SmtSO - 8Cut TapeSi2 Channel10 V22.4 nCEnhancement  
IRLML6402


SOT-23 MOSFETs ROHS
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Bourne 8759
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AUD 0.0478
Multiples of: 10

                   
WNM2046-3/TR


DFN-3L(1x0.6) MOSFETs ROHS
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Will Semiconductor 8594
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AUD 0.0504
Multiples of: 20

                   
SI4459ADY-T1-GE3


MOSFET -30V Vds 20V Vgs SO-8
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Vishay 4570
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AUD 0.9877
Multiples of: 1

29 A30 V5 mOhmsP - Channel 1 V- 55 C+ 150 C7.8 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V129 nCEnhancement Trenchfet
FCD850N80Z


Fairchild Semiconductor MOSFET
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ON Semiconductor 2425
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AUD 1.7776
Multiples of: 1

6 A800 V850 mOhmsN - Channel20 V2.5 V- 55 C+ 150 C75 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V22 nCEnhancement Superfet Ii
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