MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84DWQ-7


Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
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Diodes Incorporated 3035130
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AUD 0.1492
Multiples of: 3000

                   
ISC0603NLSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 10006
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AUD 1.0214
Multiples of: 1

56 A80 V8.9 mOhmsN - Channel 2.3 V- 55 C+ 150 C52 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V9.2 nCEnhancement  
SI5618-TP


MOSFET P-Ch -60Vds 20Vgs 0.83W -7.6A -1.9V
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Micro Commercial Components (MCC) 9989
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AUD 0.1396
Multiples of: 1

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SI2310


60V 3A N Channel SOT-23 MOSFETs ROHS
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Hottech 9960
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AUD 0.0349
Multiples of: 10

                   
35N06


TO-252 MOSFETs ROHS
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Youtai 9952
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AUD 0.1483
Multiples of: 5

                   
2N7002PV,115


Transistor: N-MOSFET x2; Trench; 60V; 250mA; Idm: 1.2A; 500mW
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Nexperia 9946
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AUD 0.1149
Multiples of: 1

350 mA60 V1.6 OhmsN - Channel20 V1.75 V- 55 C+ 150 C330 mWSmd/SmtSOT - 666 - 6ReelSi2 Channel20 V0.8 nCEnhancement  
BSC050NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 9942
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AUD 0.3579
Multiples of: 1

58 A25 V5 mOhmsN - Channel 1.2 V- 55 C+ 150 C28 WSmd/SmtTDSON - 8ReelSi1 Channel20 V10.4 nCEnhancement Optimos
AUIRFB3806


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms
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Infineon 9942
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AUD 1.1267
Multiples of: 1

43 A60 V15.8 mOhmsN - Channel    71 WThrough HoleTO - 220 - 3TubeSi1 Channel 22 nC   
IPN70R360P7SAUMA1


MOSFET
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Infineon 9935
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AUD 0.6279
Multiples of: 1

12.5 A700 V360 mOhmsN - Channel 3.5 V- 40 C+ 150 C7.2 WSMD/SMTSOT - 223 - 3Cut Tape , ReelSi1 Channel- 16 V , + 16 V16.4 nCEnhancement  
IXTY26P10T


MOSFET TrenchP Power MOSFET
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IXYS 9926
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AUD 3.719
Multiples of: 1

26 A100 V90 mOhmsP - Channel 4.5 V- 55 C+ 150 C150 WSmd/SmtTO - 252 - 3TubeSi 15 V52 nCEnhancement Trenchp
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