MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP13NK60Z


N-Channel 600 V 13A (Tc) 150W (Tc) Through Hole TO-220
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STMicroelectronics 11009
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AUD 1.4149
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13 A600 V550 mOhmsN - Channel  - 55 C+ 150 C150 WThrough HoleTO - 220 - 3 Si1 Channel30 V66 nCEnhancement Supermesh
NTDV3055L104T4G


ON Semiconductor MOSFET NFET 60V 12A 0.104R
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ON Semiconductor 10536
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AUD 0.5901
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12 A60 V104 mOhmsn - channel 2 V- 55 C+ 175 C48 Wsmd/smtDPAK - 3Reelsi1 channel 20 nC aec - q101 
EFC4627R-TR


MOSFET NCH+NCH 2.5V DRIVE S
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ON Semiconductor 10523
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AUD 0.1467
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           Cut TapeSi      
SIR5607DP-T1-RE3


MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 7 mohm a. 10V, 12 mohm a. 4.5V
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Vishay 10517
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AUD 1.9462
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90.9 A60 V7 mOhmsP - Channel 2.6 V- 55 C+ 150 C104 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31.7 nCEnhancement  
IRF640NPBF


200V 18A 150mΩ@10V,11A 150W 4V@250uA N Channel +175℃@(Tj) TO-220C MOSFETs ROHS
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JSMSEMI 10500
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AUD 0.3731
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BSZ025N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
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Infineon 10484
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AUD 1.1496
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            Optimos      
SI2301


MOSFET P Trench 20V 3A 1V @ 250uA 110 mΩ @ 3A,4.5V SOT-23 (SOT-23-3) RoHS
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Bourne 10476
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AUD 0.0255
Multiples of: 20

                   
TSM3446CX6 RFG


MOSFET 20V 5.3A Single N-Channel Power MOSFET
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Taiwan Semiconductor 10475
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AUD 0.55
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           Cut Tape       
SQ2308CES-T1_GE3


MOSFET 60V 2.3A 2watt AEC-Q101 Qualified
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Vishay 10456
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AUD 0.243
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2.3 A60 V136 mOhmsN - Channel 2 V- 55 C+ 175 C2 WSmd/SmtSOT - 23 - 3Reel  20 V3.5 nC  Trenchfet
IRF840PBF


N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 10073
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AUD 0.7479
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8 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V63 nCEnhancement  
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