MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
EM6K1T2R


MOSFET 2N-CH 30V .1A
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ROHM 10184
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AUD 0.22
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100 mA30 V7 OhmsN - Channel    150 mWSmd/SmtEMT - 6ReelSi2 Channel20 V Enhancement  
SIHG20N50C-E3


MOSFET 500V Vds 30V Vgs TO-247AC
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Vishay 10174
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AUD 1.7222
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20 A500 V270 mOhmsN - Channel 3 V- 55 C+ 150 C250 mW (1/4 w)Through HoleTO - 247AC - 3TubeSi1 Channel10 V65 nCEnhancement  
IRFP450PBF


N-Channel 500 V 14A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 10169
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AUD 1.6335
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14 A500 V400 mOhmsN - Channel 2 V- 55 C+ 150 C190 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V150 nCEnhancement  
BSO110N03MSGXUMA1


Transistor: N-MOSFET; unipolar; 30V; 12.1A; 1.56W; PG-DSO-8
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Infineon 10160
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AUD 0.4269
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            Optimos 3      
IRF1018ESTRLPBF


N-Channel 60 V 79A (Tc) 110W (Tc) Surface Mount D2PAK
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Infineon 10151
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AUD 0.9352
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79 A60 V7.1 mOhmsN - Channel    110 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V46 nC   
SSM6K804R,LF


MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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Toshiba 10132
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AUD 0.4016
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           ReelSi      
FS5N10S


100V 5A 3.1W 105mΩ@10V,4A 1.7V@250uA 3.6pF@50V N Channel 182pF@50V 3.6nC@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FUXINSEMI 10121
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AUD 0.049
Multiples of: 10

                   
AP2055K


20V 60A 4.8mΩ@4.5V,20A 3.13W N Channel TO-252-3 MOSFETs ROHS
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Quan Li 10093
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AUD 0.1535
Multiples of: 5

                   
DMP3098LQ-7


DMP3098LQ-7**WW-HAR^2867^3118816
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Diodes Incorporated 10092
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AUD 0.1018
Multiples of: 5

3.8 A30 V56 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3-Si1 Channel20 V8 nCEnhancementAec - Q101 
AO4485


40V 11A 3.2W 13m@10V,10A 1.6V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
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ElecSuper 10084
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AUD 0.2102
Multiples of: 1

                   
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