MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4485


SOP-8 MOSFETs ROHS
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Youtai 20918
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AUD 0.1441
Multiples of: 5

                   
YJQD30P02A


20V 30A 11mΩ@4.5V,15A 32W 2 P-Channel DFN-8(3.3x3.3) MOSFETs ROHS
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Yangjie 9690
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AUD 0.2638
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TSM280NB06LCR RLG


MOSFET 60V 28A 28mOhm N-Chan Pwr MOSFET
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Taiwan Semiconductor 9649
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AUD 0.4363
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28 A60 V28 mOhmsN - Channel 1 V- 55 C+ 175 C56 WSmd/SmtPDFN56 - 8Cut TapeSi1 Channel20 V18 nCEnhancement  
DMP213DUFA-7B


Diodes Incorporated MOSFET 25V P-Ch Enh FET 360pD -25Vdss -8Vgss
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Diodes Incorporated 9641
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AUD 0.1037
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166 mA25 V10 Ohmsp - channel - 0.9 V- 55 C+ 150 C360 mWsmd/smtX2 - DFN0806 - 3Reelsi1 channel+/- 8 V0.35 nCenhancement  
TQM100NB04CV RGG


MOSFETs 40V, 47A, Single N-Channel Automotive MOSFETs
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Taiwan Semiconductor 9636
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AUD 0.4227
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47 A40 V10 mOhmsN - Channel 3.8 V- 55 C+ 150 C43 WSMD/SMTPDFN33Reel , Cut TapeSi1 Channel- 20 V , + 20 V22 nCEnhancementAEC - Q101 
IRFR120TRLPBF-BE3


N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 9636
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AUD 1.1003
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7.7 A100 V270 mOhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
TSM056NH04CV RGG


MOSFETs 40V, 54A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 9625
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AUD 0.7763
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54 A40 V N - Channel 3.6 V- 55 C+ 150 C34 WSMD/SMTPDFN - 33Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement PerFET
FDS4935BZ


Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
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ON Semiconductor 9624
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AUD 0.6416
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   Dual P Channel               
KBA3134K


DFN1006-3L MOSFETs ROHS
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Yongyutai Electronics 9622
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AUD 0.0201
Multiples of: 20

                   
DMN1019USN-7


Diodes Incorporated MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
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Diodes Incorporated 9418
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AUD 0.2231
Multiples of: 5

9.3 A12 V41 mOhmsN - Channel 0.53 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V27.3 nCEnhancement Dmn1019
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