MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TN2640N3-G


Transistor: N-MOSFET; unipolar; 400V; 2A; 740mW; TO92
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Microchip 12013
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AUD 1.5615
Multiples of: 25

2 A400 V5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel20 V Enhancement  
FDD8778


MOSFET 25V N-Channel PowerTrench MOSFET
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ON Semiconductor 11987
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AUD 0.631
Multiples of: 1

35 A25 V11.6 mOhmsn - channel  - 55 C+ 175 C39 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
AO4828


SOP-8 MOSFETs ROHS
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Youtai 11976
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AUD 0.1701
Multiples of: 5

                   
IPB065N03LGATMA1


MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
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Infineon 11974
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AUD 1.3535
Multiples of: 1

50 A30 V5.4 mOhmsn - channel 1 V- 55 C+ 175 C56 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V11 nCenhancement optimos
2309


60V 2A 160mΩ 2.5V P Channel SOT23 MOSFETs ROHS
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HL 11973
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AUD 0.0341
Multiples of: 20

                   
BSC005N03LS5IATMA1


MOSFET TRENCH <= 40V
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Infineon 11963
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AUD 1.5732
Multiples of: 1

433 A30 V550 uOhmsN - Channel 1.5 V- 55 C+ 175 C188 WSMD/SMTTDSON - 8 - FLCut Tape , ReelSi1 Channel- 20 V , + 20 V122 nCEnhancement  
DMC25D1UVT-7


Diodes Incorporated MOSFET 20V Enh Mode FET
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Diodes Incorporated 11952
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AUD 0.213
Multiples of: 1

500 mA , - 3.5 A25 v , - 12 V4 Ohms , 100 mOhmsN - Channel, P - Channel 650 mV , - 350 mV- 55 C+ 150 C1.3 WSmd/SmtTSOT - 26 - 6ReelSi2 Channel8 v , 8 V0.9 nC , 24.5 nCEnhancement  
BSS138


50V 0.22A 0.35W 3.50Ω@10V,0.22A 1.5V@1mA 6pF@25V N Channel 27pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 11950
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AUD 0.0163
Multiples of: 20

                   
FDN335N


SOT-23 MOSFETs ROHS
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TECH PUBLIC 11931
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AUD 0.0579
Multiples of: 10

                   
FDMS8095AC


MOSFET PT5 150V Dual N & P-Channel Power
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ON Semiconductor 2859
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AUD 2.1968
Multiples of: 1

27 A , - 2.2 A150 v , - 150 V58 mOhms , 2.171 OhmsN - Channel, P - Channel 2 v , - 2 V- 55 C+ 150 C50 w , 12.5 WSmd/SmtPOWER56 - 8ReelSi2 Channel+/- 20 v , +/- 25 V21 nC , 2.8 nCEnhancement Powertrench
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