MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NX7002BKSX


MOSFET 60V, Dual N-channel Trench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 11786
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AUD 0.064
Multiples of: 1

330 mA60 V5.7 Ohms , 5.7 OhmsN - Channel 1.1 V- 55 C+ 150 C870 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V1 nC , 1 nCEnhancement  
DMG2302U-7


mosfet n trench 20v 4.2a 1v @ 50ua 90 m @ 3.6a,4.5v sot-23 (sot-23-3) rohs
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Diodes Incorporated 11775
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AUD 0.0697
Multiples of: 10

4.2 A20 V90 mOhmsN - Channel 400 mV- 55 C+ 150 C800 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V7 nCEnhancement  
BSC015NE2LS5IATMA1


25V 1.5mO@30A,10V N Channel TDSON-8-6 MOSFETs ROHS
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Infineon 11769
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AUD 0.724
Multiples of: 1

           Cut Tape       
HL3407A


30V 4.1A 1.2W 55m@10V,4.1A 2.4V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 11765
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AUD 0.0373
Multiples of: 10

                   
Hot IRFB4110PBF


MOSFET N Trench 100V 120A 4V @ 250uA 4.5 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 11752
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AUD 0.7776
Multiples of: 1

180 A100 V3.7 mOhmsN - Channel    370 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V150 nC   
KIA50N03BD


30V 50A 60W 9.9mO@10V,15A N Channel TO-252-2 MOSFETs ROHS
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KIA 11741
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AUD 0.1069
Multiples of: 5

                   
BSP220,115


NXP Semiconductors MOSFET TAPE-7 MOSFET
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Nexperia 11732
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AUD 0.8257
Multiples of: 1

   P Channel      SOT - 223 - 3Reel       
DMP21D2UFA-7B


Diodes Incorporated MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF
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Diodes Incorporated 11716
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AUD 0.0821
Multiples of: 1

- 330 mA- 20 V1 OhmsP - Channel - 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.8 nCEnhancement  
SI2301BDS-T1-BE3


MOSFET P-CHANNEL 2.5V (G-S)
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Vishay 11715
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AUD 0.3519
Multiples of: 1

2.2 A20 V100 mOhmsP - Channel 950 mV- 55 C+ 150 C700 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V4.5 nCEnhancement  
DMN62D0U-13


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 11707
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between Mon. 02 Mar to Thu. 05 Mar Calender.png

AUD 0.0551
Multiples of: 10

380 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C380 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V500 pCEnhancement  
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