MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
25N06


TO-252-2 MOSFETs ROHS
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TECH PUBLIC 11892
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AUD 0.1483
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IRFR010PBF-BE3


N-Channel 50V 8.2A (Tc) 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 11888
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AUD 1.0577
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8.2 A50 V200 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTTO - 252 - 3TubeSi1 Channel- 20 V , + 20 V6.7 nCEnhancement  
DMG2305UX-7-MS


20V 4A 35Ω@4.5V 1.3W P Channel SOT-23 MOSFETs ROHS
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MSKSEMI 11886
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AUD 0.0366
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IPD90P03P4L04ATMA2


P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-TO252-3-11
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Infineon 11883
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AUD 1.341
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          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
BSS223PW H6327


Infineon Technologies MOSFET P-Ch -20V -390mA SOT-323-3
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Infineon 11871
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AUD 0.0576
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- 390 mA- 20 V1.2 OhmsP - Channel - 900 mV- 55 C+ 150 C250 mWSmd/SmtPG - SOT - 323Reel-1 Channel+/- 12 V- 500 pCEnhancement  
SK3400


MOSFET N Trench 30V 5.8A 1.5V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Shikues 11869
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AUD 0.0415
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2N7002VA


MOSFET N-Chan Enhancement Mode Field Effect
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ON Semiconductor 11862
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AUD 0.4749
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280 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 563F - 6ReelSi2 Channel20 V Enhancement  
BSC059N04LS6ATMA1


MOSFET TRENCH <= 40V
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Infineon 11862
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AUD 0.6568
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59 A40 V5.9 mOhmsN - Channel 1.3 V- 55 C+ 175 C38 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V9.4 nCEnhancement  
SRK7002LT1G


MOSFET N Trench 60V 115mA 2.5V @ 1mA 7.5 Ω @ 500mA,10V SOT23 RoHS
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Leshan 11854
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AUD 0.0237
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AO3424


MOSFET N Channel 30V 2A 1.5V @ 250uA 35mΩ @ 5.8A,10V SC-59 RoHS
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Shikues 11853
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AUD 0.0613
Multiples of: 10

                   
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