MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002KW_R1_00001


MOSFET N Trench 60V 115mA 2.5V @ 250uA 3 Ω @ 500mA,10V SOT-323 RoHS
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Panjit 16005
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AUD 0.0239
Multiples of: 20

                   
IRLML2402TRPBF


MOSFET N Trench 20V 1.2A 700mV @ 250uA 250 mΩ @ 930mA,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 11608
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AUD 0.8563
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
IRFR1N60APBF-BE3


N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 11209
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AUD 1.2
Multiples of: 1

1.4 A600 V7 OhmsN - Channel 4 V- 55 C+ 150 C36 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 30 V , 30 V14 nCEnhancement  
SI3499DV-T1-BE3


MOSFET P-CHANNEL 1.5-V (G-S)
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Vishay 11201
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AUD 0.85
Multiples of: 1

7 A8 V23 mOhmsP - Channel 750 mV- 55 C+ 150 C1.1 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 5 V , + 5 V28 nCEnhancement  
SSM6K824R,LF


MOSFETs TSOP6F S-MOS(LF)
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Toshiba 11200
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AUD 0.1776
Multiples of: 1

           ReelSi      
TDM3436


MOSFET N Trench 40V 25A 2.5V @ 250uA 3.1 mΩ @ 25A,10V DFN-8_5x6mm RoHS
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Techcode 11198
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AUD 0.5321
Multiples of: 5

                   
DN3135N8-G


Microchip Technology MOSFET 350V 35Ohm
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Microchip 11155
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AUD 1.3893
Multiples of: 1

135 mA350 V35 OhmsN - Channel20 V - 55 C+ 150 C1.3 WSmd/SmtSOT - 89 - 3Reel 1 Channel20 V Depletion  
SP2004KNC


PDFN1006-3L MOSFETs ROHS
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Siliup 10961
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AUD 0.0114
Multiples of: 50

                   
AO3422


SOT23 MOSFETs ROHS
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TECH PUBLIC 10805
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AUD 0.0577
Multiples of: 10

                   
NCE4060K


MOSFET N Trench 40V 60A (Tc) 2.5V @ 250uA 13 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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NCE Power 10508
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AUD 0.2534
Multiples of: 1

                   
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