MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTE4153NT1G


MOSFET 20V 915mA N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 34920
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AUD 0.0896
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSC - 89Reel       
BSS138P,215-ES


60V 400mA 1.5 417mW 1V 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 11640
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AUD 0.0173
Multiples of: 50

                   
NVS4409NT1G


ON Semiconductor MOSFET
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ON Semiconductor 11640
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AUD 0.0936
Multiples of: 12000

700 mA25 V350 mOhmsN - Channel 650 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3Tape And ReelSi1 Channel4.5 V1.2 nCEnhancementAec - Q101 
5LN01M-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 11640
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AUD 0.1081
Multiples of: 1

100 mA50 V6 Ohmsn - channel  - 55 C+ 150 C150 mWsmd/smtMCP - 3Reelsi1 channel10 V    
BS170_D75Z


MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor 11640
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AUD 0.1478
Multiples of: 2000

500 mA60 V1.2 Ohmsn - channel  - 55 C+ 150 C830 mWthrough holeTO - 92 - 3 K in KED LEADAmmo Packsi1 channel20 V enhancement  
IPD135N03LG


Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
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Infineon 11187
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AUD 0.3099
Multiples of: 1

30 A30 V13.5 mOhmsN - Channel 2.2 V- 55 C+ 175 C31 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V6.4 nCEnhancement OptiMOS
CJL2301


MOSFET SOT-23-6L RoHS
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Changjing Electronics Technology 10359
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AUD 0.076
Multiples of: 10

                   
DMN3200U-7


Diodes Incorporated MOSFET 650mW 30Vdss
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Diodes Incorporated 5752
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AUD 0.0868
Multiples of: 5

2.2 A30 V90 mOhmsN - Channel8 V - 55 C+ 150 C650 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
SI1016CX-T1-GE3


MOSFET 20V .5/.35A PCH COMPLIMENTARY
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Vishay 2900
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AUD 0.182
Multiples of: 1

350 mA , 500 mA20 V396 mOhms , 756 mOhmsN And P - Channel 400 mV- 55 C+ 150 C220 mW , 220 mWSmd/SmtSC - 89 - 6 (SOT563 - 6)ReelSi2 Channel- 4.5 v , 4.5 V1.3 nC , 1.65 nCEnhancement Trenchfet
DMP2040USD-13


MOSFET MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.1049
Multiples of: 1

6.5 A20 V33 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.6 WSmd/SmtSO - 8Cut TapeSi2 Channel12 V19 nCEnhancement  
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