MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR220NTRPBF


MOSFET N Trench 200V 5A 4V @ 250uA 600 mΩ @ 2.9A,10V TO-252-2 (DPAK) RoHS
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Infineon 17818
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AUD 0.2372
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5 A200 V600 mOhmsN - Channel  - 55 C+ 175 C43 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
HL3407A


30V 4.1A 1.2W 55m@10V,4.1A 2.4V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 11765
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AUD 0.0373
Multiples of: 10

                   
KIA50N03BD


30V 50A 60W 9.9mO@10V,15A N Channel TO-252-2 MOSFETs ROHS
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KIA 11741
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AUD 0.1069
Multiples of: 5

                   
FDS86140


N-Channel 100 V 11.2A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
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ON Semiconductor 11733
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AUD 2.2524
Multiples of: 1

11.2 A100 V16 mOhmsN - Channel   + 150 C5 WSmd/SmtSOIC - 8ReelSi1 Channel    Powertrench
DMP21D2UFA-7B


Diodes Incorporated MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF
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Diodes Incorporated 11716
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AUD 0.0873
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- 330 mA- 20 V1 OhmsP - Channel - 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.8 nCEnhancement  
SI2301BDS-T1-BE3


MOSFET P-CHANNEL 2.5V (G-S)
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Vishay 11715
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AUD 0.3519
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2.2 A20 V100 mOhmsP - Channel 950 mV- 55 C+ 150 C700 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V4.5 nCEnhancement  
RQ1E075XNTCR


MOSFET 4V DRIVE NCH MOSFET
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ROHM 11705
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AUD 0.4997
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7.5 A30 V17 mOhmsN - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi1 Channel20 V6.8 nCEnhancement  
IPD50N06S4L08ATMA2


60V 50A 7.8mO@50A,10V 71W N Channel TO-252-3-11 MOSFETs ROHS
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Infineon 11702
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AUD 0.7316
Multiples of: 1

   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
BSC034N10LS5ATMA1


Infineon TRENCH >=100V
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Infineon 11694
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AUD 3.2584
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           Cut Tape       
AO4407C


MOSFET P Channel 30V 14A 2.3V @ 250uA 11.5mO @ 14A,10V SOP-8 RoHS
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Alpha & Omega 11690
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AUD 0.1346
Multiples of: 5

                   
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