MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTJD4105CT1G


MOSFET 20V/-8V 0.63A/-.775A Complementary
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ON Semiconductor 11640
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AUD 0.1071
Multiples of: 1

630 mA , 7750 mA20 v , 8 V375 mOhms , 900 mOhmsN - Channel, P - Channel 600 mV , 450 mV- 55 C+ 150 C0.55 WSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel4.5 v , - 1.8 V1.3 nC , 2.2 nCEnhancement  
5LN01M-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 11640
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AUD 0.1146
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100 mA50 V6 Ohmsn - channel  - 55 C+ 150 C150 mWsmd/smtMCP - 3Reelsi1 channel10 V    
BSV236SPH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
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Infineon 11640
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AUD 0.1256
Multiples of: 3000

            Optimos P      
SI1034CX-T1-GE3


MOSFET 20V Vds 8V Vgs SC89-6
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Vishay 11640
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AUD 0.1366
Multiples of: 3000

610 mA20 V396 mOhmsN - Channel 400 mV- 55 C+ 150 C220 mWSmd/SmtSC - 89 - 6Cut TapeSi2 Channel4.5 V1.3 nCEnhancement Trenchfet
BS170_D75Z


MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor 11640
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AUD 0.1478
Multiples of: 2000

500 mA60 V1.2 Ohmsn - channel  - 55 C+ 150 C830 mWthrough holeTO - 92 - 3 K in KED LEADAmmo Packsi1 channel20 V enhancement  
SSM6J825R,LF


MOSFETs
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Toshiba 11640
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AUD 0.168
Multiples of: 1

           ReelSi      
FDC610PZ


MOSFET -30V P-CHANNEL
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ON Semiconductor 11640
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AUD 0.1703
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSSOT - 6Reel       
SI1016CX-T1-GE3


MOSFET 20V .5/.35A PCH COMPLIMENTARY
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Vishay 11640
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AUD 0.1791
Multiples of: 3000

350 mA , 500 mA20 V396 mOhms , 756 mOhmsN And P - Channel 400 mV- 55 C+ 150 C220 mW , 220 mWSmd/SmtSC - 89 - 6 (SOT563 - 6)ReelSi2 Channel- 4.5 v , 4.5 V1.3 nC , 1.65 nCEnhancement Trenchfet
SI3424CDV-T1-GE3


MOSFET 30V Vds 20V Vgs TSOP-6
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Vishay 11640
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AUD 0.2004
Multiples of: 3000

8 A30 V26 mOhmsN - Channel20 V2.5 V- 55 C+ 150 C3.6 WSmd/SmtTSOP - 6ReelSi1 Channel10 V4.2 nCEnhancement Trenchfet
FDS6930B-TP


SOP-8 MOSFETs ROHS
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TECH PUBLIC 11640
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AUD 0.2066
Multiples of: 5

                   
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