MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2325DS-T1-GE3


MOSFET -150V Vds 20V Vgs SOT-23
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Vishay 11640
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AUD 0.4354
Multiples of: 3000

         Smd/SmtSOT - 23 - 3Cut TapeSi     Trenchfet
IPS70R950CEAKMA1


MOSFET CONSUMER
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Infineon 11640
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AUD 0.5841
Multiples of: 1

 700 V        TO - 251 - 3Tubesi     coolmos
IRFR2405TRLPBF


Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
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Infineon 11640
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AUD 0.7018
Multiples of: 3000

56 A55 V16 mOhmsN - Channel    110 WSmd/SmtDPAKReelSi1 Channel20 V70 nC   
IRLR3410TRRPBF


International Rectifier MOSFET 100V 1 N-CH HEXFET 105mOhms 22.7nC
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Infineon 11640
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AUD 0.7804
Multiples of: 1

15 A100 V155 mOhmsN - Channel16 V - 55 C+ 175 C52 WSmd/SmtDPAK - 3ReelSi1 Channel16 V22.7 nCEnhancement  
STL42P4LLF6


STMicroelectronics MOSFET
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STMicroelectronics 11640
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AUD 0.98
Multiples of: 3000

42 A40 V10.5 mOhmsP - Channel 2.5 V + 175 C75 WSmd/SmtPowerflat - 8ReelSi1 Channel20 V22 nCEnhancement Stripfet
TSM500P02DCQ RFG


MOSFET -20V -4.7A Dual P-Channel Power MOSFET
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Taiwan Semiconductor 11640
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AUD 0.8615
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           Cut Tape       
DN3135N8-G


Microchip Technology MOSFET 350V 35Ohm
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Microchip 11640
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AUD 1.0174
Multiples of: 1

135 mA350 V35 OhmsN - Channel20 V - 55 C+ 150 C1.3 WSmd/SmtSOT - 89 - 3Reel 1 Channel20 V Depletion  
SI7212DN-T1-E3


Vishay Semiconductors MOSFET DUAL N-CH 30V (D-S) FAST SWITCHING
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Vishay 6969
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AUD 1.4514
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4.9 A30 V36 mOhmsN - Channel  - 55 C+ 150 C1.3 WSmd/SmtPOWERPAK - 1212 - 8Reel 2 Channel12 V Enhancement  
DMP1012UCB9-7


Trans MOSFET P-CH 8V 10A Automotive
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Diodes Incorporated 0
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AUD 0.5198
Multiples of: 3000

                Enhancement  
ZXMN3B14FTA


N-Channel 30 V 2.9A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.3625
Multiples of: 3000

3.5 A30 V140 mOhmsN - channel  - 55 C150 C1 WSmdsmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
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