MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR836DP-T1-GE3


MOSFET 40 Volts 21 Amps 15.6 Watts
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Vishay 11118
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AUD 0.3355
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21 A40 V19 mOhmsN - Channel 1.2 V- 55 C+ 150 C15.6 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V11.8 nCEnhancement Trenchfet, Powerpak
BSZ0902NSI


Infineon Technologies MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
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Infineon 11114
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AUD 0.8087
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40 A30 V2.8 mOhmsN - Channel20 V2.2 V- 55 C+ 150 C48 WSmd/SmtTDSON - 8ReelSi1 Channel20 V12.2 nCEnhancement Optimos
IRFR5305


TO-252AA MOSFETs ROHS
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JSMSEMI 11113
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AUD 0.4445
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IAUCN04S7N006TATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 10987
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AUD 2.0114
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425 A40 V770 uOhmsN - Channel 3 V- 55 C+ 175 C205 WSMD/SMTPG - LHDSO - 10 - 3Reel , Cut TapeSi1 Channel20 V112 nCEnhancement OptiMOS
WSP4807


MOSFET 2 P Channel (Dual) 30V 8.9A 2.3V @ 250uA 21 mΩ @ 8.9A,10V SOP-8_150mil RoHS
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Winsok 10975
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AUD 0.1805
Multiples of: 5

                   
BSC016N06NS


Infineon Technologies MOSFET N-Ch 60V 100A DSON-8 OptiMOS
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Infineon 10971
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AUD 1.0981
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100 A60 V1.6 mOhmsN - Channel 2.1 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel10 V71 nCEnhancement Optimos
PSMN7R0-30YLC,115


N-Channel 30 V 61A (Tc) 48W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 10702
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AUD 0.3614
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61 A30 V7.1 mOhmsN - Channel 1.58 V- 55 C+ 175 C48 WSmd/SmtLFPAKReelSi1 Channel10 V16 nCEnhancement  
DMP4010SK3Q-13


40V 9.9mO@9.8A,10V 1.7W P Channel TO-252-3 MOSFETs ROHS
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Diodes Incorporated 10598
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AUD 0.5662
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- 50 A- 40 V14 mOhmsP - Channel - 2.5 V- 55 C+ 150 C3.3 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 25 V91 nCEnhancementAec - Q101 
DMG2305UX-7


MOSFET P-Ch ENH FET -20V 52mOhm -5.0V
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Diodes Incorporated 8338
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AUD 0.7961
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5 A20 V52 mOhmsP - Channel 900 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10.2 nCEnhancement  
BSS138


SOT-23 MOSFETs ROHS
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Bourne 5325
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AUD 0.0191
Multiples of: 10

                   
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