MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC0904NSI


MOSFET N-Ch 30V 78A TDSON-8 OptiMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 11847
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AUD 0.4295
Multiples of: 1

78 A30 V3.7 mOhmsN - Channel  - 55 C+ 150 C37 WSmd/SmtTDSON - 8ReelSi1 Channel20 V17 nC  Optimos
SI2318CDS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 11828
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AUD 0.102
Multiples of: 5

                   
FDMC3020DC


MOSFET 30V NChan Dual Cool PowerTrench SyncFET
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ON Semiconductor 11820
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AUD 2.0452
Multiples of: 1

17 A30 V5 mOhmsn - channel 1.9 V- 55 C+ 150 C3 Wsmd/smtPOWER 33Reelsi2 channel20 V15.5 nC  powertrench
FDD8874


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 11814
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AUD 1.1937
Multiples of: 1

116 A30 V5.1 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
BSC050NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 11811
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AUD 0.3806
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58 A25 V5 mOhmsN - Channel 1.2 V- 55 C+ 150 C28 WSmd/SmtTDSON - 8ReelSi1 Channel20 V10.4 nCEnhancement Optimos
PMN30XPAX


20V 5.2A 33mO@5.2A,8V P Channel TSOP-6 MOSFETs ROHS
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Nexperia 11792
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AUD 0.1729
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5.2 A20 V33 mOhmsP - Channel 1.3 V- 55 C+ 175 C1.7 WSMD/SMTSOT - 457 - 6Cut Tape , Reel , ReelSi1 Channel- 12 V , + 12 V11 nCEnhancement  
SI7137DP-T1-GE3


Vishay Semiconductors MOSFET -20V 1.95mOhm10V 60A P-Ch G-III
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Vishay 11782
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AUD 0.5567
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BSZ0909NS


MOSFET N-Channel MOSFET 34V 36A
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Infineon 11777
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AUD 0.2811
Multiples of: 1

36 A34 V12 mOhmsN - Channel  - 55 C+ 150 C25 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V6.1 nC  Optimos
NTR4501NT1G


MOSFET 20V 3.2A N-Channel
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ON Semiconductor 11770
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AUD 0.0814
Multiples of: 5

3.2 A20 V80 mOhmsN - Channel 650 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V2.4 nCEnhancement  
DMN62D0U-13


MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
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Diodes Incorporated 11707
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AUD 0.0551
Multiples of: 10

380 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C380 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V500 pCEnhancement  
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