MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K15AFU,LF(T


Transistor: N-MOSFET; unipolar; 30V; 100mA; 150mW; SC70
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Toshiba 11640
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AUD 0.0511
Multiples of: 12000

                   
NTJD5121NT1G


MOSFET NFET SC88D 60V 295mA
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ON Semiconductor 11640
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AUD 0.0535
Multiples of: 3000

295 mA60 V1.6 OhmsN - Channel  - 55 C+ 150 C250 mWSmd/SmtSC - 88 - 6Cut TapeSi2 Channel20 V Enhancement  
DMN63D8LDWQ-7


MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 11640
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AUD 0.0554
Multiples of: 3000

220 mA30 V2.8 Ohms , 2.8 OhmsN - Channel 800 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V870 pC , 870 pCEnhancementAec - Q101 
BSS123W-7-F


N-Channel 100 V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323
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Diodes Incorporated 11640
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AUD 0.0647
Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C200 mW (1/5 w)Smd/SmtSOT - 323 - 3Cut TapeSi1 Channel20 V Enhancement  
BSS127S-7


MOSFET N-Ch Enh Mode FET 600V 160Ohm 70mA
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Diodes Incorporated 11640
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AUD 0.0677
Multiples of: 3000

70 mA600 V160 OhmsN - Channel 3 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
NDS355N


SOT-23 MOSFETs ROHS
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TECH PUBLIC 11640
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AUD 0.0719
Multiples of: 10

                   
SP000928950


MOSFET N-Ch 55V 540mA SOT-23-3
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Infineon 11640
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AUD 0.0728
Multiples of: 1

540 mA55 V346 mOhmsN - Channel 1.2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V2.26 nCEnhancementAec - Q101 
2N7002DWQ-7-F


Diodes Incorporated MOSFET 60V Dual N-Ch Enh 7.5Ohm 5V Vgs 0.23A
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Diodes Incorporated 11640
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AUD 0.0896
Multiples of: 3000

230 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C0.4 WSmd/SmtSOT - 363 - 6ReelSi2 Channel5 V EnhancementAec - Q101 
BXT270N02M


Transistor: N-MOSFET
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Bridgelux 11640
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AUD 0.0964
Multiples of: 1

                   
NTJD1155LT1G


MOSFET 8V +/-1.3A P-Channel w/Level Shift
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ON Semiconductor 11640
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AUD 0.1034
Multiples of: 3000

1.3 A8 V175 mOhmsP - Channel 400 mV- 55 C+ 150 C400 mWSmd/SmtSC - 88 - 6Cut TapeSi2 Channel4.5 V Enhancement  
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