MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRFP4227PBF


MOSFET N Trench 200V 65A 5V @ 250uA 25 mΩ @ 46A,10V TO-247 (AC) RoHS
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Infineon 14550
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AUD 1.6815
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65 A200 V25 mOhmsN - Channel  - 40 C+ 175 C330 WThrough HoleTO - 247ACTubeSi1 Channel30 V70 nCEnhancement  
US6M2GTR


MOSFET 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode
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ROHM 11533
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AUD 0.45
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1.5 A , 1 A30 v , 20 V170 mOhms , 280 mOhmsN - Channel, P - Channel 1.5 v , 2 V + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi2 Channel4.5 V1.6 nC , 2.1 nCEnhancement  
NTPF165N65S3H


MOSFET SUPERFET3 FAST 165MOHM TO-220F
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ON Semiconductor 11533
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AUD 3.9129
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19 A650 V165 mOhmsN - Channel 4 V- 55 C+ 150 C33 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V35 nCEnhancement  
FH1304G6


45V PDFN-8L(3.3x3.3) MOSFETs ROHS
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Xinfeihong 11519
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AUD 0.1128
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FQD12N20LTM-F085


MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab
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ON Semiconductor 11519
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AUD 0.8219
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9 A200 V280 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V Enhancement  
IRFR9220TRPBF-BE3


MOSFET 200V P-CH MOSFET (D-S)
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Vishay 11504
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AUD 0.8287
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3.6 A200 V1.5 OhmsP - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V20 nCEnhancement  
2N7002KN3T5G


SOT-883 MOSFETs ROHS
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MSKSEMI 11484
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AUD 0.0266
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AUIRF1324S-7P


Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
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Infineon 11480
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AUD 4.0625
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429 A24 V1 mOhmsN - Channel20 V - 55 C 300 WSmd/SmtD - PAK - 3Tube   180 nCEnhancement  
PMN40ENAX


MOSFET 60V N-CHANNEL
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Nexperia 11429
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AUD 0.6939
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   N Channel               
BSS138BKW.115


Transistor: N-MOSFET; unipolar; 60V; 0.21A; 310mW; SOT323
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Nexperia 5130
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AUD 0.112
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