MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP510DL-7


MOSFET P-Ch Enh Mode FET 310mW -50Vdss 30Vgss
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 12212
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AUD 0.0345
Multiples of: 10

- 180 mA- 50 V10 OhmsP - Channel - 2 V- 55 C+ 150 C310 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 5 V Enhancement  
AUIRF1324S-7P


Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
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Infineon 12203
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AUD 4.5139
Multiples of: 1

429 A24 V1 mOhmsN - Channel20 V - 55 C 300 WSmd/SmtD - PAK - 3Tube   180 nCEnhancement  
LBSS139DW1T1G


50V 0.2A 380mW 3.5O@5V,200mA null SC-88 MOSFETs ROHS
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Leshan 12202
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AUD 0.033
Multiples of: 10

                   
SI2302CDS


SOT-23 MOSFETs ROHS
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TECH PUBLIC 12202
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AUD 0.0332
Multiples of: 20

                   
IRLML2402


16V 1.2A null SOT-23 MOSFETs ROHS
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Hottech 12199
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AUD 0.0413
Multiples of: 10

                   
AUIRFR3806TRL


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms
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Infineon 12180
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AUD 1.6744
Multiples of: 1

43 A60 V15.8 mOhmsN - Channel 4 V- 55 C+ 175 C71 WSmd/SmtDPAK - 3ReelSi1 Channel20 V22 nCEnhancementAec - Q101 
IRFL014NTRPBF


MOSFET N Trench 55V 1.9A 4V @ 250uA 160 mΩ @ 1.9A,10V SOT-223 RoHS
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Infineon 12167
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AUD 0.316
Multiples of: 1

   N Channel      SOT - 223Reel       
IRF9630PBF


P-Channel 200 V 6.5A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 12162
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AUD 0.6326
Multiples of: 1

6.5 A200 V800 mOhmsP - Channel 2 V- 55 C+ 150 C74 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V29 nCEnhancement  
DMN65D8LDWQ-7


MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
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Diodes Incorporated 12132
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AUD 0.096
Multiples of: 1

   N - Channel     Smd/SmtSOT - 363 - 6Cut TapeSi2 Channel   Aec - Q101 
SPD03N60C3ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 12125
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AUD 0.5196
Multiples of: 2500

 600 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
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