MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS5690


MOSFET SO-8 N-CH 60V
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ON Semiconductor 12077
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AUD 0.6682
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7 A60 V28 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V Enhancement Powertrench
DMN65D8LDWQ-7


MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
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Diodes Incorporated 12075
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AUD 0.088
Multiples of: 1

   N - Channel     Smd/SmtSOT - 363 - 6Cut TapeSi2 Channel   Aec - Q101 
SQ3426EV-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 12058
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AUD 0.5502
Multiples of: 1

7 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V6.3 nCEnhancement TrenchFET
BSZ180P03NS3 G


Infineon Technologies MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
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Infineon 12047
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AUD 0.3579
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39.6 A30 V13.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C40 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V30 nCEnhancement Optimos
AO4406-HXY


30V 8.5A 1.5W 18mΩ@10V,7A N Channel SOP-8 MOSFETs ROHS
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HXY MOS 12046
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AUD 0.0775
Multiples of: 5

                   
BSC010N04LSI


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
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Infineon 12040
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AUD 1.3528
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100 A40 V1.05 mOhmsN - Channel 1.2 V- 55 C+ 150 C139 WSmd/SmtDSON - 8ReelSi1 Channel20 V87 nCEnhancement Optimos
AP2317A


20V 6A 17mΩ@4.5V,6A 1.8W P Channel SOT-23 MOSFETs ROHS
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Quan Li 12029
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AUD 0.1365
Multiples of: 10

                   
FDD8870


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 12006
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AUD 1.181
Multiples of: 1

160 A30 V3.9 mOhmsN - Channel  - 55 C+ 175 C160 WSmd/SmtTO - 252AAReelSi1 Channel20 V Enhancement Powertrench
FDD8778


MOSFET 25V N-Channel PowerTrench MOSFET
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ON Semiconductor 11987
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AUD 0.708
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35 A25 V11.6 mOhmsn - channel  - 55 C+ 175 C39 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
AO4828


SOP-8 MOSFETs ROHS
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Youtai 11976
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AUD 0.1701
Multiples of: 5

                   
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