MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN62D1SFB-7B


Diodes Incorporated MOSFET MOSFET BVDSS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 12066
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AUD 0.0699
Multiples of: 5

410 mA60 V1.4 OhmsN - Channel 1.3 V- 55 C+ 150 C470 mWSmd/SmtX1 - DFN1006 - 3Tape And ReelSi1 Channel20 V2.8 nCEnhancement  
80N06


60V 80A 5.3mΩ 4V N Channel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HL 12066
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AUD 0.1778
Multiples of: 5

                   
DMG2305UX-7


20V 5A 1.31W 45mΩ@4.5V 1V@250uA P Channel SOT-23 MOSFETs ROHS
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HXY MOS 12062
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AUD 0.0388
Multiples of: 10

                   
SQ3426EV-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 12058
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AUD 0.5502
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7 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V6.3 nCEnhancement TrenchFET
BSZ110N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8
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Infineon 12056
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AUD 0.6897
Multiples of: 1

            Optimos 5      
BSZ180P03NS3 G


Infineon Technologies MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
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Infineon 12049
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AUD 0.3806
Multiples of: 1

39.6 A30 V13.5 mOhmsP - Channel 3.1 V- 55 C+ 150 C40 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V30 nCEnhancement Optimos
AO4406-HXY


30V 8.5A 1.5W 18mΩ@10V,7A N Channel SOP-8 MOSFETs ROHS
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HXY MOS 12046
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AUD 0.0775
Multiples of: 5

                   
AP2317A


20V 6A 17mΩ@4.5V,6A 1.8W P Channel SOT-23 MOSFETs ROHS
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Quan Li 12029
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AUD 0.1365
Multiples of: 10

                   
BSC160N10NS3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
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Infineon 12027
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AUD 0.7578
Multiples of: 1

            Optimos 3      
DMN61D9UWQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 12017
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AUD 0.0821
Multiples of: 1

340 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C440 mW  Cut TapeSi1 Channel5 V400 pCEnhancementAec - Q101 
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