MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K72CTC,L3F


MOSFET Small-signal MOSFET VDSS=60V, ID=0.15A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 11751
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AUD 0.0519
Multiples of: 1

150 mA60 V2.8 OhmsN - Channel 1.1 V + 150 C500 mW (1/2 w)Smd/SmtCST3C - 3Cut TapeSi1 Channel20 V350 pCEnhancement  
DMP21D2UFA-7B


Diodes Incorporated MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF
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Diodes Incorporated 11716
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AUD 0.0786
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- 330 mA- 20 V1 OhmsP - Channel - 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.8 nCEnhancement  
SI2301BDS-T1-BE3


MOSFET P-CHANNEL 2.5V (G-S)
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Vishay 11715
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AUD 0.3519
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2.2 A20 V100 mOhmsP - Channel 950 mV- 55 C+ 150 C700 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V4.5 nCEnhancement  
BSS84T116


MOSFET Pch -60V; -0.23A SOT-23 ESD Prot
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ROHM 11709
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AUD 0.0849
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           Cut Tape       
MDT18N20


200V 18A 130m@10V,7.5A 100W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Minos 11179
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AUD 0.2434
Multiples of: 5

                   
PMG85XPH


MOSFET 20 V, 2 A P-channel Trench MOSFET
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Nexperia 10783
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AUD 0.0883
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2 A20 V90 mOhmsP - Channel 1.15 V- 55 C+ 150 C2.4 WSmd/SmtSOT - 363 - 6ReelSi1 Channel12 V7.2 nCEnhancement  
STP55NF06


Transistor: N-MOSFET; unipolar; 60V; 35A; 110W; TO220-3
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STMicroelectronics 10478
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AUD 0.5765
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NTS074N03P3H


30V 50A 6.2m@10V,8A 1.6V@250uA 1PCSNChannel PDFN3x3 MOSFETs ROHS
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NH 10223
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AUD 0.1689
Multiples of: 5

                   
2SK3541


SOT-723 MOSFETs ROHS
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TECH PUBLIC 6634
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AUD 0.0256
Multiples of: 20

                   
CJAC100SN08U


PDFNWB5x6-8L-B MOSFETs ROHS
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Changjing Electronics Technology 5688
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AUD 0.8332
Multiples of: 1

                   
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