MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RTR030N05HZGTL


MOSFET NCH 45V 3A SMALL SIGNAL MOSFET
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ROHM 11636
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AUD 0.5335
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3 A45 V67 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSMD/SMTSOT - 346T - 3Reel , Cut TapeSi1 Channel- 12 V , 12 V6.2 nCEnhancementAEC - Q101 
SPD30P06P G


Infineon Technologies MOSFET P-Ch -60V -30A DPAK-2
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Infineon 11622
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AUD 1.1676
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- 30 A- 60 V75 mOhmsP - Channel 2.1 V- 55 C+ 175 C125 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V32 nCEnhancement Sipmos
FDP027N08B_F102


MOSFET N-Channel PwrTrench 80V 223A 2.7mOhm
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ON Semiconductor 11622
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AUD 2.8762
Multiples of: 1

223 A80 V2.21 mOhmsN - Channel  - 55 C+ 175 C246 WThrough HoleTO - 220TubeSi1 Channel     
TSM240N03CX6 RFG


MOSFET 30V 6.5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 11610
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AUD 0.4673
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6.5 A30 V17 mOhmsN - Channel 1.2 V + 150 C1.56 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel10 V4.1 nCEnhancement  
BSS138P,215-ES


60V 400mA 1.5 417mW 1V 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 11591
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AUD 0.0187
Multiples of: 50

                   
2N7002NXBKR


MOSFET 60 V N-channel Trench MOSFET
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Nexperia 11585
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AUD 0.0293
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270 mA60 V2.8 OhmsN - Channel 1.1 V- 55 C+ 150 C400 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V1 nCEnhancement  
PSMN013-30YLC,115


MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET
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Nexperia 11579
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AUD 0.2671
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32 A30 V16.9 mOhmsN - Channel    26 WSmd/SmtSO - 8ReelSi1 Channel     
AOD403


TO-252 MOSFETs ROHS
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TECH PUBLIC 11547
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AUD 0.2094
Multiples of: 5

                   
BSR315PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.49A; 0.5W; SC59
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Infineon 11489
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AUD 0.2734
Multiples of: 1

            Sipmos      
DMN67D8L-7


60V 210mA 340mW 5O@10V,500mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 10490
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AUD 0.1709
Multiples of: 5

210 mA60 V1.5 OhmsN - Channel 1 V- 55 C+ 150 C340 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 30 V821 pCEnhancement  
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