MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDC6320C


MOSFET SSOT-6 COMP N-P-CH
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ON Semiconductor 12367
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AUD 0.4308
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220 mA , 120 mA25 V10.6 Ohmsn and p - channel  - 55 C+ 150 C900 mWsmd/smtSSOT - 6Reelsi2 channel8 V enhancement  
BSS214NW H6327


Infineon Technologies MOSFET N-Ch 20V 1.5A SOT-323-3
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Infineon 12355
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AUD 0.0768
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1.5 A20 V106 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 323 - 3ReelSi1 Channel12 V800 pCEnhancement  
Si2305CDS-T1-GE3


mosfet p trench 8v 5.8a 1v @ 250ua 35 m @ 4.4a,4.5v sot-23 (sot-23-3) rohs
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Vishay 12352
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AUD 0.0761
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SI7615ADN-T1-GE3


MOSFET -20V 4.4mOhm@10V 35A P-Ch G-III
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Vishay 12351
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AUD 0.3849
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   P Channel      POWERPAK 1212 - 8Reel       
SI1442DH-T1-BE3


N-Channel 12V 4A (Ta) 1.56W (Ta) Surface Mount SC-70-6
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Vishay 12346
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AUD 0.1205
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4 A12 V20 mOhmsN - Channel 1 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 8 V , + 8 V33 nCEnhancement TrenchFET
BSS138LT3G-ES


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 12340
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AUD 0.0112
Multiples of: 10

                   
S8205A


MOSFET 2 N Channel (Dual) 20V 5A (Tj) 1V @ 250uA 25 mΩ @ 5A,4V SOT-23-6 RoHS
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Hottech 12339
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AUD 0.0371
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DMC1229UFDB-13


Diodes Incorporated MOSFET Comp ENH Mode FET 12V Vdss 8V VGss
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Diodes Incorporated 12328
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AUD 0.241
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           Reel       
WPM2015-3/TR


SOT-23 MOSFETs ROHS
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TECH PUBLIC 12319
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AUD 0.0491
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UM6K33NTN


ROHM Semiconductor MOSFET
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ROHM 12317
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AUD 0.0978
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200 mA50 V1.6 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 363 - 6Tape And ReelSi2 Channel8 V Enhancement  
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