MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFS4321TRL7PP


International Rectifier MOSFET MOSFET N-CH 150V 86A D2PAK
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Infineon 12125
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AUD 3.192
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86 A150 V11.7 mOhmsN - Channel30 V3 V- 55 C+ 175 C350 WSmd/SmtD2PAK - 7ReelSi1 Channel30 V71 nCEnhancement  
FDS6975


Transistor: P-MOSFET x2; unipolar; -20V; -6A; 2W; SO8
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ON Semiconductor 12123
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AUD 0.9201
Multiples of: 1

            Powertrench®      
DMTH6016LPS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 12122
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AUD 0.3049
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         Smd/SmtPowerdi5060 - 8Cut TapeSi      
SQ4937EY-T1_BE3


MOSFET DUAL P-CHANNEL 30V
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Vishay 12100
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AUD 0.9346
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5 A30 V56 mOhmsP - Channel - 20 V , + 20 V15 n C- 55 C+ 175 CSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi2 Channel56 mOhms2.5 V3.3 WEnhancement 
DMC31D5UDJ-7B


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 12072
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AUD 0.2426
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220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
SQ3426EV-T1_BE3


MOSFET N-CHANNEL 60V D-S
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Vishay 12058
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AUD 0.5502
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7 A60 V32 mOhmsN - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V6.3 nCEnhancement TrenchFET
NTF2955T1G


P-Channel 60 V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
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ON Semiconductor 9512
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AUD 0.4787
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- 2.6 A- 60 V145 mOhmsP - Channel20 V - 55 C+ 175 C2.3 WSmd/SmtSOT - 223 - 3Reel    Enhancement  
SE30150B


MOSFET N Trench 30V 150A 3V @ 250uA 1.9 mΩ @ 30A,10V TO-252-2 (DPAK) RoHS
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SINO-IC 9375
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AUD 0.2913
Multiples of: 5

                   
BSC066N06NS


Infineon Technologies MOSFET
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Infineon 9193
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AUD 0.7716
Multiples of: 1

64 A60 V6.6 mOhmsN - Channel+/- 20 V2.8 V- 55 C+ 150 C46 WSmd/SmtTDSON - 8Reel-1 Channel10 V17 nCEnhancement Optimos
JSM4953


30V 5.3A 54mΩ@10V,5.3A 2W 1.7V@250uA 70pF@15V 2 P-Channel 528pF@15V 6nC@5V +150℃@(Tj) SOP-8 MOSFETs ROHS
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JSMSEMI 8303
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AUD 0.0715
Multiples of: 10

                   
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