MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTDV5805NT4G


ON Semiconductor MOSFET NFET 40V 51A 9.5MOHM
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 11676
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AUD 0.585
Multiples of: 1

51 A40 V9.5 mOhmsn - channel     smd/smtDPAK - 3Reelsi      
NVMFS5C456NLAFT1G


Power MOSFET Single N-Channel 40 V 87 A 3.7m Ohm 5-Pin DFN T/R
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ON Semiconductor 11640
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AUD 1.1189
Multiples of: 1

87 A40 V3.1 mOhmsN - Channel 1.2 V- 55 C+ 175 C55 WSmd/SmtDFN - 5Cut TapeSi1 Channel20 V18 nCEnhancementAec - Q100 
SI2306A


30V 5.8A 30mΩ@10V 1.4V null SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 11640
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AUD 0.0256
Multiples of: 20

                   
MMBF170LT1G


N-Channel 60 V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 11640
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AUD 0.063
Multiples of: 1

500 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
STL3N10F7


STMicroelectronics MOSFET
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STMicroelectronics 11640
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AUD 0.217
Multiples of: 3000

4 A100 V70 mOhmsN - Channel 4.5 V- 55 C+ 150 C2.4 WSmd/SmtPowerflat - 6Cut TapeSi1 Channel+/- 20 V7.8 nCEnhancement Stripfet
FDC6303N


Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
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ON Semiconductor 11640
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AUD 0.2364
Multiples of: 3000

                   
STT6N3LLH6


STMicroelectronics MOSFET N-Ch 30V .025Ohm 6A STripFET VI
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STMicroelectronics 5820
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AUD 0.1875
Multiples of: 3000

6 A30 V40 mOhmsN - Channel 1 V- 55 C+ 150 C1.6 WSmd/SmtSOT - 23 - 6ReelSi1 Channel10 V3.6 nCEnhancement Stripfet
BSC046N02KSGAUMA1


Transistor: N-MOSFET; unipolar; 20V; 60A; 48W; PG-TDSON-8
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Infineon 4782
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AUD 0.9766
Multiples of: 1

            Optimos 2      
PMPB15XPAX


MOSFET PMPB15XPASOT1220SOT1220
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Nexperia 0
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AUD 0.2216
Multiples of: 1

8.2 A12 V20 mOhmsP - Channel 1 V- 55 C+ 150 C12.5 WSmd/SmtDFN - 2020MD - 6 Si1 Channel12 V100 nCEnhancementAec - Q101 
SIA461DJ-T1-GE3


Vishay Semiconductors MOSFET -20V -12A 17.9W 33mohm 4.5V
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.2145
Multiples of: 3000

12 A20 V33 mOhmsP - Channel 400 mV- 55 C+ 150 C17.9 WSmd/SmtSC - 70 - 6-Si1 Channel- 4.5 V18 nCEnhancement Trenchfet, Powerpak
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