MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSO040N03MS G


MOSFET OptiMOS 3 M-Series PWR-MOSFET N-CH
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Infineon 12309
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AUD 0.9865
Multiples of: 1

20 A30 V3.3 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel20 V73 nCEnhancement Optimos
FDT86246


MOSFET 150V N-Channel PowerTrench MOSFET
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ON Semiconductor 12295
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AUD 0.7875
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2 A150 V236 mOhmsN - Channel   + 150 C2.2 WSmd/SmtSOT - 223ReelSi1 Channel 2.9 nC  Powertrench
IPB60R120P7ATMA1


Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
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Infineon 12288
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AUD 2.1476
Multiples of: 1

            Coolmos P7      
BSC123N10LSGATMA1


Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
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Infineon 12287
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AUD 1.0598
Multiples of: 1

            Optimos 2      
LP0404N3T5G


MOSFET P Trench 20V 1.4A 1.2V @ 250uA 480 mΩ @ 780mA,4.5V SOT-883 RoHS
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Leshan 12278
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AUD 0.0199
Multiples of: 20

                   
2SK3018


30V 100mA 200mW 8Ω@4V,10mA N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 12270
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AUD 0.0146
Multiples of: 50

                   
STP10NK80Z


Transistor: N-MOSFET; unipolar; 800V; 6A; 160W; TO220-3
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STMicroelectronics 12266
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AUD 3.5927
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            Supermesh      
FQD12N20LTM-F085


MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab
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ON Semiconductor 12248
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AUD 0.7962
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9 A200 V280 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V Enhancement  
BSC090N03LS G


Infineon Technologies MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
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Infineon 12247
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AUD 0.4107
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13 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V18 nCEnhancement Optimos
IPG20N04S4L07AATMA1


MOSFET N-Ch 40V 20A TDSON-8
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Infineon 12220
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AUD 1.2851
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20 A40 V7.2 mOhmsN - Channel 1.7 V- 55 C+ 175 C65 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V39 nCEnhancementAec - Q101 
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