MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot RD3L150SNTL1


MOSFET Nch 60V 15A TO-252 (DPAK)
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ROHM 12041
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.4963

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15 A60 V40 mOhmsN - Channel 1 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V18 nCEnhancement  
FDD8778


MOSFET 25V N-Channel PowerTrench MOSFET
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ON Semiconductor 11987
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between Fri. 03 Jul to Thu. 09 Jul
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AUD 0.542

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35 A25 V11.6 mOhmsn - channel  - 55 C+ 175 C39 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
IPB065N03LGATMA1


MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
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Infineon 11974
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between Fri. 03 Jul to Thu. 09 Jul
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AUD 0.7312

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50 A30 V5.4 mOhmsn - channel 1 V- 55 C+ 175 C56 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V11 nCenhancement optimos
SK3134K


SOT-723 MOSFETs ROHS
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Shikues 11872
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.028

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AUIRF1324S-7P


Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
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Infineon 11868
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between Fri. 03 Jul to Thu. 09 Jul
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AUD 4.182

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429 A24 V1 mOhmsN - Channel20 V - 55 C 300 WSmd/SmtD - PAK - 3Tube   180 nCEnhancement  
CJAC40N04


MOSFET N Channel 40V 40A 2.5V @ 250uA 9.5mO @ 10A,10V PDFNWB5x6-8L RoHS
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Changjing Electronics Technology 11625
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.325

Multiples of: 5

                   
CJAC130SN06L


60V 130A 2.6mΩ@10V 2.5V N Channel - MOSFETs ROHS
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Changjing Electronics Technology 11497
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.6992

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BXT1150N10J


Transistor: N-MOSFET
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Bridgelux 11451
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between Fri. 03 Jul to Thu. 09 Jul
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AUD 0.117

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IPN50R2K0CEATMA1


Transistor: N-MOSFET; unipolar; 500V; 2.3A; 5W; PG-SOT223
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Infineon 11380
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.2087

Multiples of: 1

            Coolmos Ce      
FDPF18N20FT


MOSFET UniFET 200V
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ON Semiconductor 837
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 1.1666

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18 A200 V120 mOhmsN - Channel  - 55 C+ 150 C41 WThrough HoleTO - 220FTubeSi1 Channel30 V   Unifet
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