MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
3N10L


SOT-23-3L MOSFETs ROHS
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HL 11465
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AUD 0.0276
Multiples of: 20

                   
PSMN4R2-30MLDX


MOSFET 30V N-Channel 2.4mOhm
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Nexperia 11435
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AUD 0.2907
Multiples of: 1

70 A30 V5.7 mOhmsN - Channel 2.2 V- 55 C+ 175 C65 WSMD/SMTLFPAK - 33 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V29.3 nCEnhancement  
AUIRLR3636TRL


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
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Infineon 11425
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AUD 2.0586
Multiples of: 1

99 A60 V8.3 mOhmsn - channel    143 Wsmd/smtDPAK - 3Reelsi1 channel16 V33 nC aec - q101 
NTMFS6H848NLT1G


MOSFET T8 80V LL SO8FL
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ON Semiconductor 11423
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AUD 0.6459
Multiples of: 1

           Cut Tape       
IAUC60N04S6L030HATMA1


Mosfet Array 2 N-Channel (Half Bridge) 40V 60A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-56
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Infineon 11410
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AUD 1.133
Multiples of: 1

119 A40 V3 mOhmsN - Channel 2 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Cut Tape , ReelSi1 Channel- 16 V , + 16 V27 nCEnhancement OptiMOS
NDT2955


SOT-223 MOSFETs ROHS
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JSMSEMI 11407
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AUD 0.2976
Multiples of: 5

                   
30N10


100V 30A 32mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL 11407
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AUD 0.1329
Multiples of: 5

                   
SL2310


MOSFET N Trench 60V 3A 2V @ 250uA 105 mΩ @ 3A,10V SOT-23 RoHS
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SLKORMICRO 11368
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AUD 0.0629
Multiples of: 10

                   
DMG3406L-13


MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
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Diodes Incorporated 10374
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AUD 0.1184
Multiples of: 5

3.6 A30 V25 mOhmsN - Channel 1 V- 55 C+ 150 C770 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11.2 nCEnhancement  
NTF6P02T3G


MOSFET -20V -6A P-Channel
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ON Semiconductor 3686
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AUD 0.4455
Multiples of: 1

- 10 A- 20 V44 mOhmsP - Channel8 V - 55 C+ 150 C8.3 WSmd/SmtSOT - 223 - 3Reel    Enhancement  
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