MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFL024ZTRPBF


MOSFET N Trench 55V 5.1A 4V @ 250uA 57.5 mΩ @ 3.1A,10V SOT-223 RoHS
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Infineon 11975
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AUD 0.3464
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5.1 A55 V57.5 mOhmsN - Channel 4 V + 150 C2.8 WSmd/SmtSOT - 223ReelSi1 Channel 14 nC   
IPB065N03LGATMA1


MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
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Infineon 11974
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AUD 1.3535
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50 A30 V5.4 mOhmsn - channel 1 V- 55 C+ 175 C56 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V11 nCenhancement optimos
2309


60V 2A 160mΩ 2.5V P Channel SOT23 MOSFETs ROHS
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HL 11973
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AUD 0.0341
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BSZ065N06LS5ATMA1


MOSFET MV POWER MOS
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Infineon 11954
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AUD 0.7109
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         Smd/SmtTSDSON - 8ReelSi      
ZXMN2A01FTA


N-Channel 20 V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 11931
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AUD 0.1455
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2.2 A20 V120 mOhmsN - channel 700 mV- 55 C+ 150 C625 mWSmd/smtSOT - 23ReelSi1 Channel4.5 V3 nCEnhancement  
25N06


TO-252-2 MOSFETs ROHS
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TECH PUBLIC 11892
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AUD 0.1483
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IRFR010PBF-BE3


N-Channel 50V 8.2A (Tc) 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 11888
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AUD 1.0577
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8.2 A50 V200 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTTO - 252 - 3TubeSi1 Channel- 20 V , + 20 V6.7 nCEnhancement  
DMG2305UX-7-MS


20V 4A 35Ω@4.5V 1.3W P Channel SOT-23 MOSFETs ROHS
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MSKSEMI 11886
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AUD 0.0366
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IPD90P03P4L04ATMA2


P-Channel 30V 90A (Tc) 137W (Tc) Surface Mount PG-TO252-3-11
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Infineon 11883
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AUD 1.341
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          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
BSS223PW H6327


Infineon Technologies MOSFET P-Ch -20V -390mA SOT-323-3
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Infineon 11871
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AUD 0.0576
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- 390 mA- 20 V1.2 OhmsP - Channel - 900 mV- 55 C+ 150 C250 mWSmd/SmtPG - SOT - 323Reel-1 Channel+/- 12 V- 500 pCEnhancement  
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