MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AONR21357


MOSFET DFN_3x3mm RoHS
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Alpha & Omega 29725
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AUD 0.267
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30P03D


30V 30A 15mΩ 2.5V P Channel PDFN-8(3x3) MOSFETs ROHS
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HL 16528
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AUD 0.082
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FQP9N30


MOSFET 300V N-Channel QFET
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ON Semiconductor 11824
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AUD 0.9484
Multiples of: 1

9 A300 V450 mOhmsn - channel  - 55 C+ 150 C98 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement qfet
FDD8874


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 11814
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AUD 1.0113
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116 A30 V5.1 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
MEM2302XG


MOSFET N Trench 20V 3A 850mV @ 250uA 50 mΩ @ 3A,4.5V SOT-23 (SOT-23-3) RoHS
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Micro One 11601
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AUD 0.0428
Multiples of: 10

                   
HYG013N03LS1C2


DFN5x6-8L MOSFETs ROHS
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HuaYi 11344
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AUD 0.3512
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JMTV210P02A


DFN2020-6 MOSFETs ROHS
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JieJie 11116
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AUD 0.1124
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BSS806NE H6327


Infineon Technologies MOSFET N-Ch 20V 2.3A SOT-23-3
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Infineon 11115
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AUD 0.0969
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2.3 A20 V41 mOhmsN - Channel 300 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel8 V1.7 nCEnhancement  
IPD320N20N3GATMA1


MOSFET MV POWER MOS
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Infineon 10438
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AUD 1.9574
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34 A200 V32 mOhmsN - Channel 2 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V22 nCEnhancement Optimos
NTR1P02LT3G


MOSFET PFET SOT23 20V .160R
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ON Semiconductor 140
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AUD 0.0802
Multiples of: 5

   P - Channel     Smd/SmtSOT - 23Reel       
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