MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2303CDS-T1-GE3


P-Channel 30 V 2.7A (Tc) 1W (Ta), 2.3W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 21960
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AUD 0.0852
Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
SI1442DH-T1-BE3


N-Channel 12V 4A (Ta) 1.56W (Ta) Surface Mount SC-70-6
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Vishay 12346
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AUD 0.1205
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4 A12 V20 mOhmsN - Channel 1 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 8 V , 8 V33 nCEnhancement TrenchFET
ECH8695R-TL-W


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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ON Semiconductor 12297
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AUD 0.4494
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11 A24 V9.1 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.4 WSmd/SmtECH - 8ReelSi2 Channel12.5 V10 nC   
PCJ3134KW


SOT-323 MOSFETs ROHS
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TECH PUBLIC 12270
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AUD 0.0383
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BSC090N03LS G


Infineon Technologies MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
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Infineon 12247
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AUD 0.4107
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13 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V18 nCEnhancement Optimos
PSMN8R2-80YS,115


MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
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Nexperia 12130
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AUD 0.8861
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82 A80 V13.4 mOhmsN - Channel 1 V- 55 C+ 175 C130 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel10 V55 nCEnhancement  
BUK6Y24-40PX


40V 39A 24mO@8.2A,10V 66W P Channel SOT-669 MOSFETs ROHS
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Nexperia 12061
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AUD 0.5406
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           Cut Tape       
AO4443


SOP-8 MOSFETs ROHS
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Youtai 11431
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AUD 0.1282
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NCEP60T15G


MOSFET N Trench 60V 150A (Tc) 4V @ 250uA 3.1 mΩ @ 20A,10V DFN 5x6-8L RoHS
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NCE Power 10445
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AUD 0.8347
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IPB50R199CPATMA1


Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; PG-TO263-3
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Infineon 7426
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AUD 2.2324
Multiples of: 1

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