MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2V7002LT3G


ON Semiconductor MOSFET NFET 60V 115MA 7.5O
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ON Semiconductor 12485
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AUD 0.0764
Multiples of: 1

115 mA60 V7.5 Ohmsn - channel 1 V- 55 C+ 150 C300 mWsmd/smtSOT - 23 - 3Reelsi1 channel10 V enhancementaec - q101 
BSS126 H6327


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 12474
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AUD 0.1594
Multiples of: 5

21 mA600 V500 OhmsN - Channel 2.7 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel10 V2.1 nCDepletion  
BSZ060NE2LS


MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
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Infineon 12473
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AUD 0.307
Multiples of: 1

40 A26 V6 mOhmsN - Channel20 V1.2 V- 55 C+ 150 C26 WSmd/SmtTDSON - 8ReelSi1 Channel20 V9.1 nCEnhancement Optimos
BSC093N15NS5ATMA1


MOSFET MV POWER MOS
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Infineon 12451
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AUD 2.2493
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87 A150 V7.9 mOhmsN - Channel 3 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel+/- 20 V40.7 nCEnhancement Optimos
2N7002K-7-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 12441
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AUD 0.0112
Multiples of: 20

                   
TPM3139K


20V 550mA 590mΩ@4.5V,550mA 280mW 750mV@250uA 5pF@10V P Channel 60pF@10V +150℃@(Tj) SOT-523 MOSFETs ROHS
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TECH PUBLIC 12438
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AUD 0.0513
Multiples of: 10

                   
BSC077N12NS3 G


MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
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Infineon 12411
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AUD 2.003
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98 A120 V6.6 mOhmsN - Channel 2 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel20 V88 nCEnhancement Optimos
DMN4040SK3-13


MOSFET 40V N-Ch Enh Mode 30mOhm 10V 13.8A
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Diodes Incorporated 12409
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AUD 0.2299
Multiples of: 1

6 A40 V30 mOhmsN - Channel 1.8 V- 55 C+ 150 C8.9 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V18.6 nCEnhancement  
TSM210N02CX RFG


MOSFET 20V 6.7A Single N-Channel Power MOSFET
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Taiwan Semiconductor 12398
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AUD 0.1822
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6.7 A20 V19 mOhmsN - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.8 nCEnhancement  
FDN359AN(UMW)


SOT-23 MOSFETs ROHS
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Youtai 12396
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AUD 0.0374
Multiples of: 10

                   
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