MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSO040N03MS G


MOSFET OptiMOS 3 M-Series PWR-MOSFET N-CH
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Infineon 12309
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AUD 0.9865
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20 A30 V3.3 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel20 V73 nCEnhancement Optimos
DN2540N8-G


MOSFET N Trench 400V 170mA (Tj) 25 Ω @ 120mA,0V SOT-89 (SOT-89-3) RoHS
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Microchip 12301
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AUD 1.2379
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170 mA400 V25 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Depletion  
IPB60R120P7ATMA1


Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
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Infineon 12288
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AUD 2.1476
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            Coolmos P7      
CPH6350-TL-W


ON Semiconductor MOSFET P-CH Pwr MOSFET 30V 6A 43 mOhm
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ON Semiconductor 12280
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AUD 0.2331
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- 6 A30 V43 mOhmsP - Channel      SOT - 26 - 6Reel       
TP5335K1-G


Transistor: P-MOSFET; unipolar; -350V; -0.4A; 360mW; SOT23-3
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Microchip 12267
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AUD 0.7322
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BSC123N08NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 12262
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AUD 0.8603
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55 A80 V10.3 mOhmsN - Channel 2 V- 55 C+ 150 C66 WSmd/SmtTDSONReelSi1 Channel20 V25 nCEnhancement Optimos
FQD12N20LTM-F085


MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab
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ON Semiconductor 12248
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AUD 0.7962
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9 A200 V280 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V Enhancement  
BSC090N03LS G


Infineon Technologies MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
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Infineon 12247
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AUD 0.4107
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13 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V18 nCEnhancement Optimos
IPG20N04S4L07AATMA1


MOSFET N-Ch 40V 20A TDSON-8
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Infineon 12220
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AUD 1.2851
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20 A40 V7.2 mOhmsN - Channel 1.7 V- 55 C+ 175 C65 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V39 nCEnhancementAec - Q101 
AUIRF1324S-7P


Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
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Infineon 12203
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AUD 4.5139
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429 A24 V1 mOhmsN - Channel20 V - 55 C 300 WSmd/SmtD - PAK - 3Tube   180 nCEnhancement  
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