MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD50N04S4L08ATMA1


Infineon Technologies MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
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Infineon 11719
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AUD 0.4589
Multiples of: 1

50 A40 V6.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C46 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 16 v , 20 V30 nCEnhancementAec - Q101 
DMP21D2UFA-7B


Diodes Incorporated MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF
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Diodes Incorporated 11716
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AUD 0.0849
Multiples of: 1

- 330 mA- 20 V1 OhmsP - Channel - 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.8 nCEnhancement  
SI2301BDS-T1-BE3


MOSFET P-CHANNEL 2.5V (G-S)
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Vishay 11715
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AUD 0.3519
Multiples of: 1

2.2 A20 V100 mOhmsP - Channel 950 mV- 55 C+ 150 C700 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V4.5 nCEnhancement  
RQ1E075XNTCR


MOSFET 4V DRIVE NCH MOSFET
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ROHM 11705
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AUD 0.4997
Multiples of: 1

7.5 A30 V17 mOhmsN - Channel 1 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi1 Channel20 V6.8 nCEnhancement  
BSC034N10LS5ATMA1


Infineon TRENCH >=100V
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Infineon 11694
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AUD 3.2584
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           Cut Tape       
DMP32D9UFZ-7B


Diodes Incorporated MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A
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Diodes Incorporated 11686
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AUD 0.1744
Multiples of: 1

- 200 mA- 30 V10 OhmsP - Channel10 V- 1 V- 55 C+ 150 C390 mWSmd/SmtX2 - DFN0606 - 3ReelSi1 Channel10 V0.35 nCEnhancement Dmp32
SP60N05GNJ


PDFN-8L(3x3) MOSFETs ROHS
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Siliup 11615
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AUD 0.2361
Multiples of: 5

                   
WST3400B


SOT-23L MOSFETs ROHS
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Winsok 10805
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AUD 0.0226
Multiples of: 20

                   
BSC080P03LSGAUMA1


MOSFET SMALL SIGNALP-CH
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Infineon 9101
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AUD 1.8545
Multiples of: 1

           Reel       
AOD413A


MOSFET P Trench 40V 12A 3V @ 250uA 44 mΩ @ 12A,10V TO-252-2 (DPAK) RoHS
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Alpha & Omega 6232
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AUD 0.1909
Multiples of: 5

                   
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