MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIRA54ADP-T1-RE3


MOSFETs N-CHANNEL 40-V (D-S) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 12918
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AUD 1.0948
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36.2 A40 V2.2 mOhmsN - Channel 2.5 V- 55 C+ 150 C5.2 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V70 nCEnhancement  
IRFS4321TRL7PP


International Rectifier MOSFET MOSFET N-CH 150V 86A D2PAK
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Infineon 12901
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AUD 3.5466
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86 A150 V11.7 mOhmsN - Channel30 V3 V- 55 C+ 175 C350 WSmd/SmtD2PAK - 7ReelSi1 Channel30 V71 nCEnhancement  
PSMN8R2-80YS,115


MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
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Nexperia 12882
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AUD 1.0249
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82 A80 V13.4 mOhmsN - Channel 1 V- 55 C+ 175 C130 WSmd/SmtSOT - 669 (LFPAK)ReelSi1 Channel10 V55 nCEnhancement  
IPD70N03S4L04ATMA1


MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
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Infineon 12876
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AUD 0.7724
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70 A30 V3.6 mOhmsN - Channel 1 V- 55 C+ 175 C68 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V48 nCEnhancementAec - Q101 
TPN6R303NC,LQ(S


30V 20A 19W 6.3mΩ@10V,10A 2.3V@200uA N Channel TSON-8(3.1x3.1) MOSFETs ROHS
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Toshiba 12871
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AUD 0.164
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WSD30L40DN


MOSFET P Trench 30V 40A (Tc) 2.3V @ 250uA 14 mΩ @ 20A,10V DFN 3x3-8 RoHS
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Winsok 12824
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AUD 0.2625
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IPB60R280C6ATMA1


Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
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Infineon 12804
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AUD 2.7034
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            coolmos c6      
BSC016N06NSATMA1


Infineon Technologies MOSFET N-Ch 60V 100A DSON-8 OptiMOS
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Infineon 12802
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AUD 1.5557
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100 A60 V1.6 mOhmsN - Channel 2.8 V- 55 C+ 150 C139 WSmd/SmtDSON - 8Reel  20 V71 nC  Optimos
BSZ0911LSATMA1


MOSFET TRENCH <= 40V
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Infineon 12794
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AUD 0.3008
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40 A30 V7.2 mOhmsN - Channel 2 V- 55 C+ 150 C-SMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V10 nCEnhancement  
DMP10H4D2S-7


MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF
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Diodes Incorporated 12590
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AUD 0.0709
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270 mA100 V4.2 OhmsP - Channel 1 V- 55 C+ 150 C440 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V1.8 nCEnhancement  
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