MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJM3401PSA


MOSFET P Trench 30V 4.1A 1.3V @ 250uA 65 mΩ @ 4.1A,10V SOT-23 RoHS
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Pingjingsemi 13230
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AUD 0.0423
Multiples of: 10

                   
SI2301


SOT-23 MOSFETs ROHS
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DOWO 13211
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AUD 0.0302
Multiples of: 20

                   
BSZ0905PNSATMA1


MOSFET TRENCH <= 40V
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Infineon 13203
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AUD 0.6599
Multiples of: 1

40 A30 V8.7 mOhmsP - Channel 2.5 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Cut Tape , ReelSi1 Channel- 25 V , + 25 V43.2 nCEnhancement  
DMP32D4S-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA
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Diodes Incorporated 13197
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AUD 0.11
Multiples of: 1

300 mA- 30 V2.4 OhmsP - Channel - 2.4 V- 55 C+ 150 C540 mWSmd/SmtSOT23Reel- +/- 20 V1.2 nCEnhancement  
AO3404


SOT-23 MOSFETs ROHS
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TECH PUBLIC 13192
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AUD 0.0448
Multiples of: 10

                   
SQ4284EY-T1_BE3


MOSFET DUAL N-CHANNEL 40V
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Vishay 13187
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AUD 1.3231
Multiples of: 1

           Cut Tape       
PMV65UNER


MOSFET PMV65UNE/TO-236AB/REEL 7" Q3/T
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Nexperia 13176
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AUD 0.1956
Multiples of: 1

3.4 A20 V63 mOhmsN - Channel 450 mV- 55 C+ 150 C6.25 WSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V6 nCEnhancement  
DMP3099L-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
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Diodes Incorporated 13041
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AUD 0.0729
Multiples of: 5

- 3.8 A- 30 V65 mOhmsP - Channel20 V- 1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V11 nCEnhancement  
IRLML2402TRPBF


MOSFET N Trench 20V 1.2A 700mV @ 250uA 250 mΩ @ 930mA,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 8385
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AUD 0.0771
Multiples of: 5

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
IRF7351TRPBF


MOSFET 2 N Channel (Dual) 60V 8A 4V @ 50uA 17.8 mΩ @ 8A,10V SOIC-8_150mil RoHS
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Infineon 4921
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AUD 0.5908
Multiples of: 1

8 A60 V17.8 mOhmsN - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
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