MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS7650


MOSFET 30/20V N-Chan PowerTrench
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ON Semiconductor 12280
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AUD 1.7914
Multiples of: 1

60 A30 V1.1 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V Enhancement Powertrench
PSMN1R2-30YLC,115


MOSFET N-Ch 30V 1.25mOhms
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Nexperia 12279
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AUD 0.8454
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100 A30 V1.25 mOhmsN - Channel 1.46 V- 55 C+ 175 C215 WSmd/SmtLFPAKReelSi1 Channel20 V78 nC   
SP2006KT7


SOT-723 MOSFETs ROHS
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Siliup 12270
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AUD 0.0122
Multiples of: 50

                   
BSC090N03LS G


Infineon Technologies MOSFET N-Ch 30V 47A TDSON-8 OptiMOS 3
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Infineon 12247
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AUD 0.4107
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13 A30 V9 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V18 nCEnhancement Optimos
TQM138KCU RFG


MOSFETs 60V, 0.31A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 12233
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AUD 0.0597
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310 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C300 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.8 nCEnhancementAEC - Q101 
IPG20N04S4L07AATMA1


MOSFET N-Ch 40V 20A TDSON-8
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Infineon 12220
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AUD 1.2851
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20 A40 V7.2 mOhmsN - Channel 1.7 V- 55 C+ 175 C65 WSmd/SmtTDSON - 8Cut TapeSi2 Channel16 V39 nCEnhancementAec - Q101 
IPD50R280CEAUMA1


500V 18.1A 280mO@13V,4.2A 119W N Channel TO-252 MOSFETs ROHS
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Infineon 12210
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AUD 0.8423
Multiples of: 1

 500 V       Smd/SmtTO - 252 - 3Cut TapeSi     Coolmos
FDMA86551L


MOSFET 60V Single N-Channel PowerTrench MOSFET
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ON Semiconductor 12191
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AUD 0.7669
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7.5 A60 V35 mOhmsN - Channel 1.8 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6 2X2ReelSi1 Channel 12 nC  Powertrench
CJBA3134K


MOSFET N Channel 20V 750mA 1.1V @ 250uA 500mO @ 150mA,4.5V DFN1006-3L RoHS
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Changjing Electronics Technology 11368
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AUD 0.0249
Multiples of: 20

                   
SI7129DN-T1-GE3


MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
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Vishay 11168
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AUD 0.3678
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   P - Channel  - 50 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel       
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