MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138DW-7-F


Trans MOSFET N-CH 50V 0.2A Automotive 6-Pin SOT-363 T/R
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Diodes Incorporated 13318
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AUD 0.0559
Multiples of: 10

   N - Channel  - 55 C150 C Smdsmt Reel       
IRF9952TRPBF


Transistor: N/P-MOSFET; unipolar; 30/-30V; 3.5/-2.3A; 2W; SO8
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Infineon 13304
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AUD 0.4417
Multiples of: 1

3.5 A30 V150 mOhmsN And P - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V6.9 nC   
MMFTN138


Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
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Diotec 13302
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AUD 0.0367
Multiples of: 1

                   
IRLML5203


MOSFET P Trench 30V 3A 3V @ 250uA 85 mΩ @ 4.1A,10V SOT-23 RoHS
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Youtai 13287
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AUD 0.0484
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ZXMN3A02X8TA


Diodes Incorporated MOSFET 30V N Chnl UMOS
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Diodes Incorporated 13281
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AUD 0.9708
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6.7 A30 V35 mOhmsN - Channel 1 V- 55 C+ 150 C1.1 WSmd/SmtMSOP - 8ReelSi1 Channel20 V26.8 nCEnhancement  
HXY100N03DF


30V 100A 4mΩ@10V,30A N Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 13266
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AUD 0.1639
Multiples of: 5

                   
IPD053N06NATMA1


Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
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Infineon 13248
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AUD 0.9167
Multiples of: 1

            Optimos      
FQP32N20C


Transistor: N-MOSFET; unipolar; 200V; 17.8A; 156W; TO220AB
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ON Semiconductor 13240
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AUD 2.9266
Multiples of: 1

            qfet®      
PCJ3134KW


SOT-323 MOSFETs ROHS
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TECH PUBLIC 13230
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AUD 0.0416
Multiples of: 10

                   
BSC014N04LSATMA1


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
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Infineon 13151
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AUD 0.8957
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100 A40 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel20 V85 nCEnhancement Optimos
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