MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AON7403


PDFN-8 MOSFETs ROHS
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TECH PUBLIC 13434
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AUD 0.2196
Multiples of: 5

                   
DMP68D0LFB-7B


MOSFET MOSFET BVDSS: 61V~100V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 13423
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AUD 0.0733
Multiples of: 1

           Reel , Cut TapeSi      
2N7002M3T5G


60V 350mA 1.5O@4.5V,200mA 150mW N Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC 13386
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AUD 0.0274
Multiples of: 20

                   
IRLML0030TRPBF-G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 13376
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AUD 0.0434
Multiples of: 10

                   
RTU002P02T106


MOSFET P-CH 20V 200MA SOT-323
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ROHM 13356
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AUD 0.2474
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   P - Channel     Smd/SmtUMT - 3Reel       
IPG20N10S436AATMA1


MOSFET N-CHANNEL 100+
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Infineon 13329
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AUD 0.8573
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20 A , 20 A100 v , 100 V31 mOhms , 31 mOhmsN - Channel 2.7 V- 55 C+ 175 C43 WSmd/SmtTDSON - 8ReelSi1 Channel+/- 20 V9.4 nCEnhancementAec - Q101 
BSS315P H6327


Infineon Technologies MOSFET P-Ch -30V -1.5A SOT-23-3
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Infineon 13321
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AUD 0.1479
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1.5 A30 V113 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 2.3 nCEnhancementAec - Q101 
BSC100N06LS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 13319
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AUD 0.7456
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50 A60 V7.8 mOhmsN - Channel 1.2 V- 55 C+ 150 C50 WSmd/SmtTDSONReelSi1 Channel20 V45 nCEnhancement Optimos
AO3422A


SOT-23 MOSFETs ROHS
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Youtai 13316
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AUD 0.0403
Multiples of: 10

                   
SI3460BDV-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 13307
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AUD 0.6248
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8 A20 V27 mOhmsN - Channel 1 V- 55 C+ 150 C3.5 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V9 nCEnhancement  
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First...181182183184185...

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