MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138BKW


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 12517
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AUD 0.0193
Multiples of: 5

                   
SI2301 3A


20V 3A 1W 110mΩ@4.5V,3A P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 12396
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AUD 0.0222
Multiples of: 20

                   
FDS6930B-TP


SOP-8 MOSFETs ROHS
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TECH PUBLIC 12391
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AUD 0.2129
Multiples of: 5

                   
SIRA54ADP-T1-RE3


MOSFETs N-CHANNEL 40-V (D-S) MOSFET
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Vishay 12375
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AUD 1.0513
Multiples of: 1

36.2 A40 V2.2 mOhmsN - Channel 2.5 V- 55 C+ 150 C5.2 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V70 nCEnhancement  
SI1442DH-T1-BE3


N-Channel 12V 4A (Ta) 1.56W (Ta) Surface Mount SC-70-6
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Vishay 12346
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AUD 0.1205
Multiples of: 1

4 A12 V20 mOhmsN - Channel 1 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 8 V , 8 V33 nCEnhancement TrenchFET
SI2309CDS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 12338
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AUD 0.0918
Multiples of: 5

                   
SI2324A-TP


MOSFET N-Ch Enh FET 100Vds 2A 8A 20Vgs 22pF
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Micro Commercial Components (MCC) 12319
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AUD 0.1757
Multiples of: 10

2 A100 V280 mOhmsN - Channel 10 V- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.8 nCEnhancement  
FDB2532


Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
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ON Semiconductor 11640
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AUD 3.0161
Multiples of: 800

            Powertrench®      
Hot IRF9540NSTRLPBF


Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
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Infineon 8978
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AUD 0.8549
Multiples of: 1

23 A100 V117 mOhmsP - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel20 V64.7 nC   
BSS308PEH6327XT


MOSFET OptiMOS P3 Small Signal Transistor
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Infineon 6458
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AUD 0.1084
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2 A30 V62 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V- 5 nCEnhancementAec - Q101 
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