MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMV65UNER


MOSFET PMV65UNE/TO-236AB/REEL 7" Q3/T
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Nexperia 13176
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AUD 0.1956
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3.4 A20 V63 mOhmsN - Channel 450 mV- 55 C+ 150 C6.25 WSmd/SmtSOT - 23 - 3ReelSi1 Channel8 V6 nCEnhancement  
BSC034N06NSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 13156
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AUD 1.1985
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100 A60 V3.4 mOhmsN - Channel 2.1 V- 55 C+ 150 C74 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V33 nCEnhancement Optimos
TC6320K6-G


N and P channel enhancement mode MOSFET pair - 200V – DFN 8 - 37,400 mg - Low threshold - ...
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Microchip 13146
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AUD 2.0358
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1 A200 V7 Ohms , 8 OhmsN And P - Channel 1 V- 55 C+ 150 C Smd/SmtDFN - 8ReelSi2 Channel10 v , - 10 V Enhancement  
2N7002PW


MOSFETs MOSFET, SOT-323, 60V, 0.315A, 150C, N
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Diotec 13140
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AUD 0.0312
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           Reel , Cut TapeSi      
DMC31D5UDJ-7B


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 13139
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AUD 0.2216
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220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
CSD18503Q5A


N-Channel 40 V 19A (Ta), 100A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 13138
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AUD 1.0496
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121 A40 V4.3 mOhmsN - channel 1.5 V- 55 C+ 150 C120 WSmd/smtSONReelSi1 Channel10 V27 nCEnhancement Nexfet
MS50N06


60V 50A 11.5mΩ@10V,20A 1.25W 2.5V@250uA 33pF@25V N Channel 900pF@25V 30nC@10V +150℃@(Tj) TO-252 MOSFETs ROHS
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MSKSEMI 13128
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AUD 0.1412
Multiples of: 5

                   
NTLUS3A40PZTAG


MOSFET T4 20/8 PCH 2X2 8 CHANNEL
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ON Semiconductor 13095
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AUD 0.6305
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      - 55 C+ 150 C1.7 WSmd/SmtUDFN - 6ReelSi      
NDT456P


MOSFET SOT-223 P-CH ENHANCE
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ON Semiconductor 13091
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AUD 0.8472
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   P - Channel  - 65 C+ 150 C Smd/SmtSOT - 223Reel       
AO6802


SOT-23-6 MOSFETs ROHS
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Youtai 13090
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AUD 0.055
Multiples of: 10

                   
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