MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF4905STRLPBF


MOSFET P Trench 55V 42A (Tc) 4V @ 250uA 20 mΩ @ 42A,10V D2PAK RoHS
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Infineon 18382
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AUD 1.0042
Multiples of: 1

- 70 A- 55 V20 mOhmsP - Channel - 4 V + 150 C170 WSmd/SmtD - PAK - 3ReelSi1 Channel 180 nC   
HYG038N03LR1D


TO-252-2L MOSFETs ROHS
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HuaYi 14613
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AUD 0.1703
Multiples of: 5

                   
SUD35N10-26P-BE3


MOSFET 100V N-CH (D-S)
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Vishay 13560
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AUD 1.7558
Multiples of: 1

35 A100 V26 mOhmsN - Channel 4.4 V- 55 C+ 175 C83 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V31 nCEnhancement  
FQT4N20LTF


Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
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ON Semiconductor 13550
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AUD 0.5279
Multiples of: 1

            Qfet®      
SSM3J134TU,LF


MOSFET LowON Res MOSFET ID=-3.2A VDSS=-20V
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Toshiba 13531
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AUD 0.1414
Multiples of: 1

3.2 A20 V93 mOhmsP - Channel 1 V- 55 C+ 150 C500 mWSMD/SMTUFM - 3Reel , Cut TapeSi1 Channel- 8 V , 8 V4.7 nCEnhancement U - MOSVI
BRCS2310MA


SOT-23 MOSFETs ROHS
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Blue Rocket 13502
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AUD 0.0447
Multiples of: 10

                   
STP65NF06


Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; TO220-3
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STMicroelectronics 13480
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AUD 0.8647
Multiples of: 1

                   
NVMFS5C456NLAFT1G


Power MOSFET Single N-Channel 40 V 87 A 3.7m Ohm 5-Pin DFN T/R
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ON Semiconductor 13406
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AUD 1.052
Multiples of: 1

87 A40 V3.1 mOhmsN - Channel 1.2 V- 55 C+ 175 C55 WSmd/SmtDFN - 5Cut TapeSi1 Channel20 V18 nCEnhancementAec - Q100 
SI2323DS(UMW)


SOT-23 MOSFETs ROHS
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Youtai 12163
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AUD 0.0451
Multiples of: 10

                   
DMP2104V-7


null 2.1A 150mO@950mA,4.5V 850mW P Channel SOT-563 MOSFETs ROHS
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Diodes Incorporated 0
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AUD 0.106
Multiples of: 3000

860 mA20 V150 mOhmsP - Channel  - 55 C+ 150 C210 mWSmd/SmtSOT - 563ReelSi1 Channel12 V Enhancement  
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