MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI6423DQ-T1-E3


MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
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Vishay 14033
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AUD 1.3148
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   P - Channel  - 55 C+ 150 C Smd/SmtTSSOP - 8ReelSi     Trenchfet
IRF7329TRPBF


Mosfet Array 2 P-Channel (Dual) 12V 9.2A 2W Surface Mount 8-SO
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Infineon 14032
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AUD 0.7002
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9.2 A12 V17 mOhmsP - Channel 900 mV + 150 C2 WSmd/SmtSOIC - 8ReelSi2 Channel 57 nC   
IRLML2060TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14026
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AUD 0.0587
Multiples of: 10

                   
IPD025N06N


Infineon Technologies MOSFET N-Ch 60V 90A DPAK-2
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Infineon 14011
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AUD 1.9714
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90 A60 V2.1 mOhmsN - Channel 2.1 V- 55 C+ 175 C167 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V83 nCEnhancement Optimos
2N7002BKW.115


Transistor: N-MOSFET; unipolar; 60V; 0.215A; 330mW; SOT323
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Nexperia 13988
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AUD 0.1111
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DMN2991UDR4-7R


MOSFETs MOSFET BVDSS: 8V-24V X2-DFN1010-6 T&R 5K
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Diodes Incorporated 13980
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AUD 0.0454
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           Reel , Cut TapeSi      
IRF6795MTRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
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Infineon 13968
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AUD 0.4754
Multiples of: 4800

160 A25 V2.4 mOhmsN - Channel20 V1.8 V- 40 C+ 150 C2.8 WSmd/SmtDirectfet - 3ReelSi1 Channel20 V35 nC  Directfet
2V7002LT1G-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 13958
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AUD 0.0114
Multiples of: 10

                   
BSS138NH6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
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Infineon 13944
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AUD 0.1533
Multiples of: 1

            Sipmos      
DMN3730UFB4-7B


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 0
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AUD 0.0873
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910 mA30 V460 mOhmsN - Channel 450 mV- 55 C+ 150 C0.69 WSmd/SmtX2 - DFN1006 - 3Cut TapeSi1 Channel8 V1.6 nCEnhancement  
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