MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTLUS3A40PZTAG


MOSFET T4 20/8 PCH 2X2 8 CHANNEL
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ON Semiconductor 13095
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AUD 0.6305
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      - 55 C+ 150 C1.7 WSmd/SmtUDFN - 6ReelSi      
IPA60R460CEXKSA1


Infineon Technologies MOSFET N-Ch 600V 9.1A TO220FP-3
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Infineon 13095
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AUD 1.0091
Multiples of: 1

9.1 A600 V460 mOhmsn - channel20 V2.5 V- 40 C+ 150 C30 Wthrough holeTO - 220FP - 3Tubesi1 channel20 V28 nCenhancement coolmos
IPD65R660CFDATMA1


Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
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Infineon 13064
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AUD 1.3546
Multiples of: 1

            coolmos      
PJM2300NSA


MOSFET N Trench 20V 4.5A 1V @ 250uA 32 mΩ @ 3A,4.5V SOT-23 RoHS
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Pingjingsemi 13036
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AUD 0.0166
Multiples of: 20

                   
SP2006KT7J


SOT-723 MOSFETs ROHS
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Siliup 12998
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AUD 0.0123
Multiples of: 50

                   
BUK7Y12-100EX


MOSFET N-channel 100 V 12 mo FET
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Nexperia 12974
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AUD 1.1581
Multiples of: 1

85 A100 V8.1 mOhmsN - Channel 3 V- 55 C+ 175 C238 WSmd/SmtLFPAK56 - 5ReelSi1 Channel20 V68 nC   
NCE3404


MOSFET N Trench 30V 5.8A 2.4V @ 250uA 31 mO @ 5A,10V SOT-23 (SOT-23-3) RoHS
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NCE Power 12920
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AUD 0.0798
Multiples of: 10

                   
YJL05N06AL


60V 5A 35mΩ@10V,5A 2.5W N Channel SOT-23-3L MOSFETs ROHS
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Yangjie 12915
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AUD 0.0928
Multiples of: 5

                   
DMG3415U-7


MOSFET P-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 12837
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AUD 0.1832
Multiples of: 5

4 A20 V42.5 mOhmsP - Channel 300 mV- 55 C+ 150 C900 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V9.1 nCEnhancement  
AO4800


MOSFET N Trench 30V 6.9A 1.4V @ 250uA 27 mΩ @ 6.9A,10V SOIC-8_150mil RoHS
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Alpha & Omega 5111
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AUD 0.242
Multiples of: 5

                   
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