MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI6423DQ-T1-E3


MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
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Vishay 13197
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between Thu. 08 Oct to Mon. 12 Oct
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AUD 1.2084

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9.5 A12 V8.5 mOhmsP - Channel 800 mV- 55 C+ 150 C1.5 WSMD/SMTTSSOP - 8Reel , Cut TapeSi1 Channel- 8 V , 8 V110 nCEnhancement TrenchFET
SQ4284EY-T1_BE3


MOSFET DUAL N-CHANNEL 40V
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Vishay 13187
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between Thu. 08 Oct to Mon. 12 Oct
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AUD 1.3231

Multiples of: 1

8 A40 V13.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C3.9 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V30 nCEnhancement TrenchFET
IRF9620PBF


MOSFET RECOMMENDED ALT 844-IRF9620PBF
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Vishay 13184
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between Fri. 16 Oct to Wed. 21 Oct
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AUD 0.8551

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         Through HoleTO - 220 - 3TubeSi      
CSD18503Q5A


N-Channel 40 V 19A (Ta), 100A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 13138
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between Thu. 08 Oct to Mon. 12 Oct
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AUD 1.0496

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121 A40 V4.3 mOhmsN - channel 1.5 V- 55 C+ 150 C120 WSmd/smtSONReelSi1 Channel10 V27 nCEnhancement Nexfet
IPP90R340C3XKSA1


Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3
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Infineon 13135
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between Fri. 02 Oct to Thu. 08 Oct
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AUD 4.0848

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            coolmos      
APM2305AC


SOT-23 MOSFETs ROHS
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TECH PUBLIC 13128
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between Fri. 16 Oct to Wed. 21 Oct
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AUD 0.0735

Multiples of: 5

                   
CSD18543Q3A


MOSFET 60-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm 8-VSONP -55 to 150
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Texas Instruments 12998
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between Fri. 16 Oct to Wed. 21 Oct
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AUD 0.7759

Multiples of: 1

12 A60 V12.0 mOhmsN - channel 1.5 V- 55 C+ 150 C66 WSmd/smtVSONP - 8Cut TapeSi1_Channel20 V11.1 nCEnhancement Nexfet
SL2302S


MOSFET N Channel 20V 2.6A 1.5V @ 250uA 85mO @ 2.6A,4.5V SOT-23 RoHS
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SLKORMICRO 12028
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between Fri. 16 Oct to Wed. 21 Oct
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AUD 0.0154

Multiples of: 50

                   
Hot BSC098N10NS5


Infineon Technologies MOSFET Pwr transistor 100V OptiMOS 5
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Infineon 11321
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between Fri. 16 Oct to Wed. 21 Oct
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AUD 0.6698

Multiples of: 1

60 A100 V9.8 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V22 nCEnhancement Optimos
T2N7002AK,LM


Toshiba MOSFET Small-signal MOSFET
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Toshiba 11028
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between Fri. 16 Oct to Wed. 21 Oct
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AUD 0.0353

Multiples of: 10

200 mA60 V3.9 OhmsN - Channel 1.1 V + 150 C1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.27 nCEnhancement  
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