MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AONR21321


30V 24A 16.5mΩ@12A,10V 2.3V@250uA P Channel DFN-8(3x3) MOSFETs ROHS
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Alpha & Omega 30254
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AUD 0.1672
Multiples of: 5

                   
Hot IRF9530NPBF


MOSFET P Trench 100V 14A 4V @ 250uA 200 mΩ @ 8.4A,10V TO-220 (TO-220-3) RoHS
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Infineon 19400
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AUD 0.2899
Multiples of: 5

14 A100 V200 mOhmsP - Channel 4 V- 55 C+ 175 C79 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V38.7 nC   
FDMS3664S


MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
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ON Semiconductor 13684
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AUD 0.9389
Multiples of: 1

13 A , 25 A30 V8 mOhms , 2.6 mOhmsN - Channel 1.1 V- 55 C+ 150 C2.2 W , 2.5 WSMD/SMTPOWER - 56 - 8Reel , Cut TapeSi2 Channel- 20 V , - 12 V , 12 V , 20 V29 nC , 52 nCEnhancement PowerTrench
AO4435


SOP-8 MOSFETs ROHS
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JSMSEMI 13628
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AUD 0.0804
Multiples of: 5

                   
UT6KE5TCR


MOSFETs UT6KE5 is a low on-resistance MOSFET ideal for switching applications and DC-DC Converter. This product includes two 100V MOSFETs in a small surface mount package (DFN2020-8D).
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ROHM 13606
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AUD 0.3064
Multiples of: 1

2 A100 V207 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTDFN2020 - 8DReel , Cut TapeSi2 Channel- 20 V , + 20 V2.8 nCEnhancement  
SIR5607DP-T1-RE3


MOSFETs P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 7 mohm a. 10V, 12 mohm a. 4.5V
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Vishay 13432
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AUD 1.9643
Multiples of: 1

90.9 A60 V7 mOhmsP - Channel 2.6 V- 55 C+ 150 C104 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31.7 nCEnhancement  
IRLML0060TRPBF


MOSFET N Trench 60V 2.7A 2.5V @ 25uA 92 mΩ @ 2.7A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 12018
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AUD 0.1236
Multiples of: 5

            Hexfet®      
WNM2030-3/TR-ES


20V 900mA 125m@4.5V,500mA 1PCSNChannel SOT-723 MOSFETs ROHS
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ElecSuper 10767
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AUD 0.0252
Multiples of: 20

                   
2N7002LT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3026
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AUD 0.0179
Multiples of: 20

                   
BSZ900N15NS3GATMA1


Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
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Infineon 63
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AUD 0.8072
Multiples of: 1

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