MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DN3135N8-G


Microchip Technology MOSFET 350V 35Ohm
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Microchip 13580
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AUD 1.1511
Multiples of: 500

135 mA350 V35 OhmsN - Channel20 V - 55 C+ 150 C1.3 WSmd/SmtSOT - 89 - 3Reel 1 Channel20 V Depletion  
STP30NF20


Transistor: N-MOSFET; unipolar; 200V; 19A; 125W; TO220-3
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STMicroelectronics 13580
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AUD 1.341
Multiples of: 1000

                   
SQD40P10-40L_GE3


MOSFET -100V -30A 136W AEC-Q101 Qualified
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Vishay 13580
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AUD 1.4397
Multiples of: 2000

38 A- 100 V40 mOhmsP - Channel 1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V96 nCEnhancementAec - Q101Trenchfet
STB120N4F6


STMicroelectronics MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
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STMicroelectronics 13580
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AUD 1.5254
Multiples of: 1000

80 A40 V4 mOhmsn - channel20 V4 V- 55 C+ 175 C110 Wsmd/smtD2PAK - 3Reel   65 nC   
TK72E12N1,S1X


Toshiba MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044
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Toshiba 13580
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AUD 1.8516
Multiples of: 50

179 A120 V3.6 mOhmsN - Channel20 V2 v to 4 V + 150 C255 WThrough HoleTO - 220 - 3ReelSi1 Channel10 V130 nCEnhancement  
FDMC3020DC


MOSFET 30V NChan Dual Cool PowerTrench SyncFET
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ON Semiconductor 13580
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AUD 1.9231
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17 A30 V5 mOhmsn - channel 1.9 V- 55 C+ 150 C3 Wsmd/smtPOWER 33Reelsi2 channel20 V15.5 nC  powertrench
IRFB4410ZGPBF


MOSFET MOSFT 100V 97A 9mOhm 83nC
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Infineon 13580
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AUD 1.9521
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97 A100 V7.2 mOhmsn - channel    230 Wthrough holeTO - 220 - 3Tubesi1 channel20 V83 nC   
TPH1R403NL-HXY


30V 150A 2.4mΩ@10V,30A 2.5V N Channel DFN-8(5x6) MOSFETs ROHS
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HXY MOS 13578
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AUD 0.345
Multiples of: 1

                   
SN7002W H6327


Infineon Technologies MOSFET N-Ch 60V 230mA SOT-323-3
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Infineon 13570
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AUD 0.0624
Multiples of: 1

230 mA60 V2.3 OhmsP - Channel 1.4 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT - 323Reel-1 Channel+/- 20 V1 nCEnhancement  
DMP2104V-7


null 2.1A 150mO@950mA,4.5V 850mW P Channel SOT-563 MOSFETs ROHS
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Diodes Incorporated 13560
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AUD 0.2192
Multiples of: 1

860 mA20 V150 mOhmsP - Channel  - 55 C+ 150 C210 mWSmd/SmtSOT - 563ReelSi1 Channel12 V Enhancement  
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