MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK9Y29-40E,115


N-Channel 40 V 25A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 13366
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AUD 0.2373
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25 A40 V25.8 mOhmsN - Channel10 V1.7 V- 55 C+ 175 C37 WSmd/SmtLFPAK56 - 4Reel   5 nC   
RTU002P02T106


MOSFET P-CH 20V 200MA SOT-323
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ROHM 13356
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AUD 0.2474
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   P - Channel     Smd/SmtUMT - 3Reel       
IPL60R1K5C6SATMA1


Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
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Infineon 13344
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AUD 0.5704
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            Coolmos C6      
SSM3J134TU,LF


MOSFET LowON Res MOSFET ID=-3.2A VDSS=-20V
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Toshiba 13331
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AUD 0.154
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3.2 A20 V93 mOhmsP - Channel 1 V- 55 C+ 150 C500 mWSMD/SMTUFM - 3Reel , Cut TapeSi1 Channel- 8 V , 8 V4.7 nCEnhancement U - MOSVI
2SK3018W


MOSFET N Trench 30V 100mA 1.5V @ 100uA 8 Ω @ 10mA,4V SOD-323 RoHS
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Blue Rocket 13327
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AUD 0.0258
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BSS315P H6327


Infineon Technologies MOSFET P-Ch -30V -1.5A SOT-23-3
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Infineon 13321
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AUD 0.1479
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1.5 A30 V113 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 2.3 nCEnhancementAec - Q101 
RSH070P05TB1


MOSFET Pch -45V -7A MOSFET
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ROHM 13321
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AUD 1.3923
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7 A45 V28 mOhmsP - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi      
SI3460BDV-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 13307
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AUD 0.6248
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8 A20 V27 mOhmsN - Channel 1 V- 55 C+ 150 C3.5 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V9 nCEnhancement  
AON7246E


60V 13A 13.2mΩ@13A,10V 24W 2.2V@250uA N Channel DFN-8-EP(3x3) MOSFETs ROHS
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Alpha & Omega 13298
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AUD 0.2719
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AS2302


MOSFET N Trench 20V 3.5A 1.5V @ 250uA 60 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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AnBon 10670
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AUD 0.0295
Multiples of: 20

                   
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