MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP32D4SW-7


Diodes Incorporated MOSFET 30V P-CH MOSFET
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Diodes Incorporated 477240
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AUD 0.1267
Multiples of: 3000

250 mA30 V4 OhmsP - Channel 2.4 V- 55 C+ 150 C370 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel20 V1.2 nCEnhancement  
TK7A90E,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba 29101
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AUD 0.8791
Multiples of: 1

                   
FQB8N60CTM


MOSFET 600V N-Channel Adv Q-FET C-Series
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ON Semiconductor 13968
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AUD 1.48
Multiples of: 1

7.5 A600 V1.2 Ohmsn - channel  - 55 C+ 150 C3.13 Wsmd/smtD2PAKReelsi1 channel30 V enhancement  
TSM6502CR RLG


MOSFET N&P Channel Power MOSFET
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Taiwan Semiconductor 13905
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AUD 1.9154
Multiples of: 1

5.4 A , 4 A60 V28 mOhms , 73 mOhmsN - Channel, P - Channel 1.2 V- 55 C+ 150 C40 WSmd/SmtPDFN56 - 8Cut TapeSi2 Channel10 v , - 4.5 V20.8 nC , 9.5 nCEnhancement  
BSL215C H6327


Infineon Technologies MOSFET SMALL SIGNALP-CH
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Infineon 13812
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AUD 0.3391
Multiples of: 5

1.5 A20 V108 mOhms , 102 mOhmsP - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6Reel-1 Channel12 V730 pC , - 3 nCEnhancement  
IPB120N10S405ATMA1


MOSFET N-CHANNEL 100+
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Infineon 13760
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AUD 2.2
Multiples of: 1

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Hot IRFB3077PBF


MOSFET N Trench 75V 120A 4V @ 250uA 3.3 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 13589
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AUD 1.2982
Multiples of: 1

210 A75 V2.8 mOhmsN - Channel    370 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V160 nC   
AO6402A(UMW)


SOT-23-6 MOSFETs ROHS
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Youtai 13560
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AUD 0.0518
Multiples of: 10

                   
WST3400


MOSFET N Trench 30V 7A 1.2V @ 250uA 28 mΩ @ 5A,4.5V SOT-23-3L RoHS
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Winsok 9777
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AUD 0.0628
Multiples of: 5

                   
IPA70R600P7SXKSA1


MOSFET
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Infineon 523
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AUD 0.5832
Multiples of: 1

8.5 A700 V490 mOhmsN - Channel 2.5 V- 40 C+ 150 C24.9 WThrough HoleTO - 220FP - 3TubeSi1 Channel16 V10.5 nCEnhancement Coolmos
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