MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIRA64DP-T1-RE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 13638
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AUD 0.5797
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60 A30 V1.8 mOhmsN - Channel 1.1 V- 55 C+ 150 C27.8 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 v , - 16 V65 nCEnhancement Trenchfet
2N7002P.215


MOSFET N Trench 60V 360mA 2.4V @ 250uA 1.6 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Nexperia 13628
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AUD 0.1467
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DMC31D5UDJ-7B


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 13624
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AUD 0.2357
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220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN - Channel, P - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
2N7002W


MOSFET MOSFET, SOT-323, 60V, 0.115A, N, 0.2W
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Diotec 13582
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AUD 0.0192
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115 mA60 V13.5 OhmsN - Channel 2.5 V + 150 C200 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V Enhancement 2N7002W
TK7A90E,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba 13582
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AUD 0.861
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IPD70N03S4L-04


Infineon Technologies MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
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Infineon 13580
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AUD 0.9072
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70 A30 V4.3 mOhmsN - Channel16 V1 V- 55 C+ 175 C31 WSmd/SmtDPAK - 3ReelSi1 Channel16 V48 nCEnhancementAec - Q101Optimos
STB120N4F6


STMicroelectronics MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE
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STMicroelectronics 13580
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AUD 1.5254
Multiples of: 1000

80 A40 V4 mOhmsn - channel20 V4 V- 55 C+ 175 C110 Wsmd/smtD2PAK - 3Reel   65 nC   
STP30NF20


Transistor: N-MOSFET; unipolar; 200V; 19A; 125W; TO220-3
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STMicroelectronics 13580
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AUD 1.5579
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IRFB4410ZGPBF


MOSFET MOSFT 100V 97A 9mOhm 83nC
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Infineon 13580
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AUD 2.076
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97 A100 V7.2 mOhmsn - channel    230 Wthrough holeTO - 220 - 3Tubesi1 channel20 V83 nC   
STH320N4F6-6


STMicroelectronics MOSFET N-CH 40V 11mOhm 200A STripFET
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STMicroelectronics 13580
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AUD 4.1052
Multiples of: 1000

200 A40 V1.3 mOhmsn - channel20 V2 V- 55 C+ 175 C300 Wsmd/smtH2PAK - 6Reelsi1 channel20 V240 nCenhancementaec - q101stripfet
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