MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP6110SSS-13


MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC
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Diodes Incorporated 13354
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AUD 0.2578
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- 4.5 A- 60 V98 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi1 Channel20 V9.5 nCEnhancement  
WPM2015-3/TR


20V 2.4A 110mΩ@4.5V,2.7A 1.1W 1V@250uA P Channel SOT-23-3 MOSFETs ROHS
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Yongyutai Electronics 13347
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AUD 0.0381
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IAUC100N04S6L020ATMA1


MOSFET MOSFET_20V 40V
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Infineon 13344
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AUD 0.6769
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           Cut Tape       
DMN31D5UDJ-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 13340
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AUD 0.0985
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            Si      
AOD409


MOSFET P Trench 60V 26A 2.4V @ 250uA 40 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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Alpha & Omega 13335
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AUD 0.4032
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FQP45N15V2


Transistor: N-MOSFET; unipolar; 150V; 31A; 220W; TO220AB
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ON Semiconductor 13332
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AUD 1.9373
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   N Channel               
IPG20N10S436AATMA1


MOSFET N-CHANNEL 100+
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Infineon 13329
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AUD 0.8061
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20 A , 20 A100 v , 100 V31 mOhms , 31 mOhmsN - Channel 2.7 V- 55 C+ 175 C43 WSmd/SmtTDSON - 8ReelSi1 Channel+/- 20 V9.4 nCEnhancementAec - Q101 
2N7000


MOSFET N Trench 60V 200mA 3V @ 1mA 5 Ω @ 500mA,10V TO-92 (TO-92-3) RoHS
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Changjing Electronics Technology 13327
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AUD 0.0341
Multiples of: 20

                   
DMP510DL-7


MOSFET P-Ch Enh Mode FET 310mW -50Vdss 30Vgss
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Diodes Incorporated 13327
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AUD 0.0453
Multiples of: 10

- 180 mA- 50 V10 OhmsP - Channel - 2 V- 55 C+ 150 C310 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 5 V Enhancement  
BSS315P H6327


Infineon Technologies MOSFET P-Ch -30V -1.5A SOT-23-3
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Infineon 13321
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AUD 0.1479
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1.5 A30 V113 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 2.3 nCEnhancementAec - Q101 
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