MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BC2301(2.8A) 2301


SOT-23-3L MOSFETs ROHS
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Hong Kong Chuangji 13318
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AUD 0.0171
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AO3422A


SOT-23 MOSFETs ROHS
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Youtai 13316
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AUD 0.0403
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BSC040N10NS5ATMA1


Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
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Infineon 13314
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AUD 1.3101
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            optimos 5      
BSZ0506NSATMA1


Transistor: N-MOSFET; unipolar; 30V; 40A; 27W; PG-TSDSON-8
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Infineon 13307
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AUD 0.4433
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            Optimos 5      
SI3460BDV-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 13307
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AUD 0.6248
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8 A20 V27 mOhmsN - Channel 1 V- 55 C+ 150 C3.5 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V9 nCEnhancement  
FDD1600N10ALZ


Fairchild Semiconductor MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND
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ON Semiconductor 13303
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AUD 0.6896
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6.8 A100 V175 mOhmsN - Channel 2.8 V- 55 C+ 150 C14.9 WSmd/SmtDPAK - 3ReelSi1 Channel 3.61 nC  Powertrench
IRF6616TRPBF


N-Channel 40 V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
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Infineon 13289
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AUD 2.111
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19 A40 V4.6 mOhmsN - Channel20 V   89 WSmd/SmtDirectfetReelSi1 Channel20 V29 nC  Directfet
IRLML5203


MOSFET P Trench 30V 3A 3V @ 250uA 85 mΩ @ 4.1A,10V SOT-23 RoHS
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Youtai 13287
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AUD 0.0484
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FCD7N60TM


MOSFET N-CH/600V/7A SuperFET
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ON Semiconductor 13287
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AUD 1.9032
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7 A600 V530 mOhmsN - Channel  - 55 C+ 150 C83 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
ZXMN3A02X8TA


Diodes Incorporated MOSFET 30V N Chnl UMOS
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Diodes Incorporated 13281
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AUD 0.8969
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6.7 A30 V35 mOhmsN - Channel 1 V- 55 C+ 150 C1.1 WSmd/SmtMSOP - 8ReelSi1 Channel20 V26.8 nCEnhancement  
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