MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP1002


100V 2A 180mΩ@10V,1A 1.1W N Channel SOT-23 MOSFETs ROHS
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Quan Li 61468
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AUD 0.0528
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IPL60R1K5C6SATMA1


Transistor: N-MOSFET; unipolar; 600V; 3A; 26.6W; PG-VSON-4
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Infineon 13344
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AUD 0.5904
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            Coolmos C6      
BSS315P H6327


Infineon Technologies MOSFET P-Ch -30V -1.5A SOT-23-3
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Infineon 13321
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AUD 0.1479
Multiples of: 1

1.5 A30 V113 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 2.3 nCEnhancementAec - Q101 
SI3460BDV-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay 13307
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AUD 0.6248
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8 A20 V27 mOhmsN - Channel 1 V- 55 C+ 150 C3.5 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V9 nCEnhancement  
IRFR9310TRLPBF


Vishay Semiconductors MOSFET P-Chan 400V 1.8 Amp
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Vishay 13273
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AUD 0.9593
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1.8 A- 400 V7 OhmsP - Channel  - 55 C+ 150 C50 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V Enhancement  
TSM250N02CX RFG


MOSFET 20V, 5.8A, Single N- Channel Power MOSFET
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Taiwan Semiconductor 13235
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AUD 0.1619
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5.8 A20 V20 mOhmsN - Channel 400 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V7.7 nCEnhancement  
FDS4435A


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 12794
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AUD 0.1733
Multiples of: 5

                   
IRFS4227TRLPBF


MOSFET N Trench 200V 62A (Tc) 5V @ 250uA 26 mΩ @ 46A,10V TO-263-2 RoHS
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Infineon 12770
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AUD 1.0028
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62 A200 V26 mOhmsN - Channel  - 40 C+ 175 C330 WSmd/SmtD2PAKReelSi1 Channel30 V70 nCEnhancement  
SI2328A


SOT-23 MOSFETs ROHS
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Youtai 11552
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AUD 0.0435
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NTGD3148NT1G


MOSFET NFET 20V 3A 70MOHM TSOP6
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ON Semiconductor 2910
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AUD 0.2727
Multiples of: 3000

3.5 A20 V58 mOhmsN - Channel 500 mV- 50 C+ 150 C1.1 WSmd/SmtTSOP - 6ReelSi2 Channel12 V3.8 nC , 3.8 nCEnhancement  
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