MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2306


MOSFET N Trench 30V 3.16A 3V @ 250uA 47 mΩ @ 3.5A,10V SOT-23 (SOT-23-3) RoHS
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Hottech 23047
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AUD 0.0339
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IRFR4615TRLPBF


MOSFET N Trench 150V 33A 5V @ 100uA 42 mΩ @ 21A,10V TO-252-2 (DPAK) RoHS
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Infineon 14550
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AUD 0.827
Multiples of: 1

33 A150 V34 mOhmsN - Channel    144 WSmd/SmtDPAKReelSi1 Channel20 V26 nC   
BSS84P H6433


Infineon Technologies MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 12535
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AUD 0.0723
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- 170 mA- 60 V8 OhmsP - Channel - 1.5 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT - 23Reel-1 Channel+/- 20 V1 nCEnhancement  
SCH1332-TL-W


MOSFET PCH 1.8V DRIVE SERIE
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ON Semiconductor 12499
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AUD 0.1829
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- 2.5 A- 20 V215 mOhmsP - Channel - 1.3 V + 150 C1 WSmd/SmtSOT - 563 - 6ReelSi1 Channel+/- 10 V4.6 nCEnhancement  
2V7002LT3G


ON Semiconductor MOSFET NFET 60V 115MA 7.5O
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ON Semiconductor 12485
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AUD 0.0688
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115 mA60 V7.5 Ohmsn - channel 1 V- 55 C+ 150 C300 mWsmd/smtSOT - 23 - 3Reelsi1 channel10 V enhancementaec - q101 
RV2C002UNT2L


ROHM Semiconductor MOSFET
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ROHM 12474
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AUD 0.1021
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180 mA20 V11.4 OhmsN - Channel 300 mV- 55 C+ 150 C100 mWSmd/SmtDFN1006 - 3ReelSi1 Channel+/- 10 V Enhancement  
IRFI530NPBF


Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
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Infineon 12191
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AUD 1.0482
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11 A100 V110 mOhmsN - Channel    33 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V29.3 nC   
PSMN4R0-30YLDX


MOSFET MOSFET N-CH 30V LFPAK
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Nexperia 12143
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AUD 0.3394
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95 A30 V4 mOhmsN - Channel20 V1.74 V- 55 C+ 175 C64 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V9.1 nCEnhancement  
NTR4171PT1G


P-Channel 30 V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 11960
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AUD 0.1234
Multiples of: 5

3.5 A30 V75 mOhmsP - Channel 700 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V15.6 nCEnhancement  
AO3442A


SOT-23-3 MOSFETs ROHS
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Youtai 11940
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AUD 0.039
Multiples of: 10

                   
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