MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2451UFB4Q-7B


MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 13483
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AUD 0.0541
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1.3 A20 V400 mOhmsN - Channel 1 V- 55 C+ 150 C660 mWSMD/SMT Reel , Cut TapeSi1 Channel- 12 V , + 12 V3.4 nCEnhancement  
FDN361BN(UMW)


SOT-23 MOSFETs ROHS
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Youtai 13483
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AUD 0.0341
Multiples of: 10

                   
ZXMN3F30FHTA


N-Channel 30 V 3.8A (Ta) 950mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 13475
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AUD 0.2217
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4.6 A30 V47 mOhmsN - Channel  - 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
LN2306LT1G


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 38 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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Leshan 13470
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AUD 0.0399
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AO4882-MS


40V 6A 25mΩ@10V,6A 1.9W 1.6V@250uA 76pF@15V 2 N-Channel 1.013nF@15V 9.8nC@4.5V -55℃~+150℃@(Tj) SOP-8 MOSFETs ROHS
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MSKSEMI 13469
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AUD 0.1622
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BSS138PS


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper 13465
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AUD 0.0309
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IRFR9310TRLPBF


Vishay Semiconductors MOSFET P-Chan 400V 1.8 Amp
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Vishay 13464
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AUD 1.0005
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1.8 A- 400 V7 OhmsP - Channel  - 55 C+ 150 C50 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V Enhancement  
2N7002KW-TP


MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW
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Micro Commercial Components (MCC) 13453
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AUD 0.0437
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340 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V    
2N7002E


MOSFET N Trench 60V 300mA 2.5V @ 250uA 3 Ω @ 500mA,10V SOT-23 RoHS
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SLKORMICRO 13434
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AUD 0.0135
Multiples of: 50

                   
PMZB150UNEYL


N-Channel 20 V 1.5A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3
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Nexperia 0
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AUD 0.1659
Multiples of: 1

   N - Channel     Smd/SmtDFN1006B - 3ReelSi1 Channel     
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