MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRF7342TRPBF


MOSFET 2 P Channel (Dual) 55V 3.4A 1V @ 250uA 105 mΩ @ 3.4A,10V SOIC-8_150mil RoHS
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Infineon 13268
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AUD 0.5299
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3.4 A55 V105 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V26 nC   
HXY100N03DF


30V 100A 4mΩ@10V,30A N Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 13266
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AUD 0.1639
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PCJ3134KW


SOT-323 MOSFETs ROHS
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TECH PUBLIC 13230
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AUD 0.0416
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PJM3401PSA


MOSFET P Trench 30V 4.1A 1.3V @ 250uA 65 mΩ @ 4.1A,10V SOT-23 RoHS
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Pingjingsemi 13230
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AUD 0.0423
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SI2301


SOT-23 MOSFETs ROHS
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DOWO 13211
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AUD 0.0302
Multiples of: 20

                   
BSZ0905PNSATMA1


MOSFET TRENCH <= 40V
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Infineon 13203
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AUD 0.6599
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40 A30 V8.7 mOhmsP - Channel 2.5 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Cut Tape , ReelSi1 Channel- 25 V , + 25 V43.2 nCEnhancement  
DMP32D4S-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA
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Diodes Incorporated 13197
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AUD 0.11
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300 mA- 30 V2.4 OhmsP - Channel - 2.4 V- 55 C+ 150 C540 mWSmd/SmtSOT23Reel- +/- 20 V1.2 nCEnhancement  
AO3404


SOT-23 MOSFETs ROHS
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TECH PUBLIC 13192
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AUD 0.0448
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IRFZ44ESTRLPBF


Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; D2PAK
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Infineon 13192
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AUD 1.219
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48 A60 V23 mOhmsN - Channel    110 WSmd/SmtD2PAKReelSi1 Channel20 V40 nC   
SQ4284EY-T1_BE3


MOSFET DUAL N-CHANNEL 40V
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Vishay 13187
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AUD 1.3231
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