MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4828


SOP-8 MOSFETs ROHS
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Youtai 38882
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AUD 0.1012
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HSBB6066


60V 60A 4.4mΩ@10V,20A 45W 1.65V@250uA 25pF@30V N Channel 1.67nF@30V 33nC@10V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 13830
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AUD 0.3812
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IQE006NE2LM5ATMA1


N-Channel 25 V 41A (Ta), 298A (Tc) 2.1W (Ta), 89W (Tc) Surface Mount PG-TSON-8-4
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Infineon 13228
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AUD 1.342
Multiples of: 1

298 A25 V650 uOhmsN - Channel 2 V- 55 C+ 150 C89 WSMD/SMTTSON - 8 - 4Optimos , Cut Tape , ReelSi1 Channel- 16 V , + 16 V28.5 nCEnhancement OptiMOS
ZXMN3A02X8TA


Diodes Incorporated MOSFET 30V N Chnl UMOS
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Diodes Incorporated 13202
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AUD 1.3378
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6.7 A30 V35 mOhmsN - Channel 1 V- 55 C+ 150 C1.1 WSmd/SmtMSOP - 8ReelSi1 Channel20 V26.8 nCEnhancement  
SP2006KT7J


SOT-723 MOSFETs ROHS
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Siliup 13192
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AUD 0.0122
Multiples of: 50

                   
SQ4284EY-T1_BE3


MOSFET DUAL N-CHANNEL 40V
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Vishay 13187
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AUD 1.3231
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8 A40 V13.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C3.9 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V30 nCEnhancement TrenchFET
CSD18503Q5A


N-Channel 40 V 19A (Ta), 100A (Tc) 3.1W (Ta), 120W (Tc) Surface Mount 8-VSONP (5x6)
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Texas Instruments 13138
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AUD 1.0496
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121 A40 V4.3 mOhmsN - channel 1.5 V- 55 C+ 150 C120 WSmd/smtSONReelSi1 Channel10 V27 nCEnhancement Nexfet
TSM3457CX6 RFG


MOSFET -30V, -5A, Single P-Channel Power MOSFET
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Taiwan Semiconductor 13130
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AUD 0.2719
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5 A30 V82 mOhmsP - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel- 4.5 V9.52 nCEnhancement  
AP4008QD


40V 20A 17mΩ@10V,10A 21W 2 N-Channel DFN-8(3.2x3.2) MOSFETs ROHS
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Quan Li 11858
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AUD 0.1866
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IPZ40N04S5L4R8ATMA1


Trans MOSFET N-CH 40V 40A 8-Pin TSDSON T/R
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Infineon 54
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AUD 0.5515
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   N - Channel     Smd/SmtTSDSON - 8Cut TapeSi1 Channel   Aec - Q101 
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