MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPP60R080P7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 17850
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AUD 3.1915
Multiples of: 1

37 A600 V69 mOhmsN - Channel 3 V- 55 C+ 150 C129 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V51 nCEnhancement Coolmos
RRH100P03GZETB


ROHM Semiconductor MOSFET MOSFET Pch -30V -10A
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ROHM 14044
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AUD 1.2997
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10 A30 V9 mOhmsP - Channel 2.5 V  2 WSmd/SmtSOP - 8ReelSi1 Channel20 V39 nC   
IPD025N06N


Infineon Technologies MOSFET N-Ch 60V 90A DPAK-2
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Infineon 14011
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AUD 1.9714
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90 A60 V2.1 mOhmsN - Channel 2.1 V- 55 C+ 175 C167 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V83 nCEnhancement Optimos
IPD70N12S311ATMA1


MOSFET MOSFET_120V300V
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Infineon 14006
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AUD 1.419
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70 A120 V9.2 mOhmsN - Channel 2 V- 55 C+ 175 C125 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V65 nCEnhancementAEC - Q101OptiMOS
RQ6E050ATTCR


ROHM Semiconductor MOSFET
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ROHM 13774
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AUD 0.2799
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5 A30 V38 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6ReelSi1 Channel20 V20.8 nCEnhancement  
IRLML6244


20V 6.3A null SOT-23 MOSFETs ROHS
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Hottech 13463
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AUD 0.0465
Multiples of: 10

                   
CJQ4459A


SOP-8 MOSFETs ROHS
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Changjing Electronics Technology 13240
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AUD 0.1012
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STP40NF10L


Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; TO220-3
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STMicroelectronics 13234
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AUD 0.908
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SSM3K361R,LF


MOSFET U-MOSVIII-H 100V 3.5A 3.2nC MOSFET
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Toshiba 6285
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AUD 0.183
Multiples of: 5

3.5 A100 V92 mOhmsN - Channel 1.5 V- 55 C+ 175 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V3.2 nCEnhancement  
IRF9540STRLPBF


MOSFET P-Chan 100V 19 Amp
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Vishay 0
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AUD 1.08
Multiples of: 800

   P - Channel  - 55 C+ 175 C Smd/SmtTO - 263ABReelSi      
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