MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQP30N06


MOSFET 60V N-Channel QFET
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ON Semiconductor 14889
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AUD 1.0082
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
TPM2009EP3


20V 660mA 520mΩ@4.5V,1A 100mW 1.1V@250uA 9pF@16V P Channel 113pF@16V +150℃@(Tj) DFN1006-3L MOSFETs ROHS
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TECH PUBLIC 13463
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AUD 0.0345
Multiples of: 20

                   
BRCS2310MA


SOT-23 MOSFETs ROHS
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Blue Rocket 13463
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AUD 0.0434
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BSC028N06LS3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
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Infineon 13451
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AUD 2.0164
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            Optimos 3      
ISC044N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 13386
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AUD 3.3943
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156 A150 V4.4 mOhmsN - Channel 3.5 V- 55 C+ 175 C250 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V55 nCEnhancement  
WPM2015-3/TR


20V 2.4A 110mΩ@4.5V,2.7A 1.1W 1V@250uA P Channel SOT-23-3 MOSFETs ROHS
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Yongyutai Electronics 13308
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AUD 0.0436
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NTD25P03LG


TO-252 MOSFETs ROHS
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TECH PUBLIC 13201
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AUD 0.2256
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CJ3134KW


MOSFET N Trench 20V 750mA 1.1V @ 250uA 380 mΩ @ 650mA,4.5V SOT-323 (SC-70) RoHS
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Changjing Electronics Technology 12125
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AUD 0.0301
Multiples of: 20

                   
SI2304DDS-T1-GE3


N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 11586
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AUD 0.1686
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3.6 A30 V60 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.7 nCEnhancement Trenchfet
Hot IRF7316TRPBF


MOSFET 2 P Channel (Dual) 30V 4.9A 1V @ 250uA 58 mΩ @ 4.9A,10V SOP-8_150mil RoHS
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Infineon 1619
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AUD 0.4573
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   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8Reel       
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