MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMP10A13FQTA


Diodes Incorporated MOSFET 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW
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Diodes Incorporated 14453
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AUD 0.4252
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         Smd/smtSOT - 23 - 3ReelSi      
2N7002


60V 115mA 225mW 2Ω@10V,100mA N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 14453
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AUD 0.0083
Multiples of: 50

                   
DMP3028LFDE-7


Diodes Incorporated MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A
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Diodes Incorporated 14453
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AUD 0.2381
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- 5.3 A- 30 V60 mOhmsP - Channel - 1 v to - 2.4 V- 55 C+ 150 C660 mWSmd/SmtUDFN2020 - 6ReelSi1 Channel20 V10.9 nCEnhancement  
BSC070N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8
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Infineon 14452
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AUD 0.921
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80 A100 V10.2 mOhmsN - Channel 2.2 V- 55 C+ 150 C83 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V30 nCEnhancement Optimos
RV2E014AJT2CL


MOSFET Nch 30V 1.4A, DFN1006-3, Small Signal MOSFET
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ROHM 14430
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AUD 0.2002
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1.4 A30 V290 mOhmsN - Channel 1.5 V- 55 C+ 150 C600 mWSMD/SMTDFN1006 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V Enhancement  
AP15N10K


100V 14.6A 85mΩ@10V,5A 30W N Channel TO-252 MOSFETs ROHS
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Quan Li 14414
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AUD 0.1826
Multiples of: 5

                   
2N7002DWH6327XT


MOSFET OptiMOS Small Signal Transistor
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Infineon 14403
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AUD 0.0913
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300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel20 V600 pC , 600 pCEnhancementAec - Q101 
RV1C001ZPT2L


MOSFET Small Signal MOSFET
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ROHM 14388
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AUD 0.0764
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100 mA20 V3.8 OhmsP - Channel 1 V- 55 C+ 150 C100 mWSmd/SmtVML0806 - 3ReelSi1 Channel10 V    
DMP31D0U-7


MOSFET 30V P-Ch ENH Mode FET -30Vdss 8V 2.5A
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Diodes Incorporated 14368
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AUD 0.1231
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           ReelSi      
WPM2015-3/TR


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14365
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AUD 0.0471
Multiples of: 10

                   
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