MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
KSI2302CDS-T1-GE3


20V 2.9A 1W 45Ω@4.5V,2.9A N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yongyutai Electronics 14016
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AUD 0.022
Multiples of: 50

                   
IPD025N06N


Infineon Technologies MOSFET N-Ch 60V 90A DPAK-2
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Infineon 14011
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AUD 1.9714
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90 A60 V2.1 mOhmsN - Channel 2.1 V- 55 C+ 175 C167 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V83 nCEnhancement Optimos
Hot 2N7002H6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
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Infineon 13986
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AUD 0.0536
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            Optimos      
FQB8N60CTM


MOSFET 600V N-Channel Adv Q-FET C-Series
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ON Semiconductor 13968
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AUD 1.5223
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7.5 A600 V1.2 Ohmsn - channel  - 55 C+ 150 C3.13 Wsmd/smtD2PAKReelsi1 channel30 V enhancement  
BSZ070N08LS5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 13951
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AUD 1.276
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         Smd/SmtTSDSON - 8Cut TapeSi     Optimos
NX7002AK-TP


SOT-23 MOSFETs ROHS
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TECH PUBLIC 13919
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AUD 0.0185
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TSM6502CR RLG


MOSFET N&P Channel Power MOSFET
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Taiwan Semiconductor 13905
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AUD 1.9154
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5.4 A , 4 A60 V28 mOhms , 73 mOhmsN - Channel, P - Channel 1.2 V- 55 C+ 150 C40 WSmd/SmtPDFN56 - 8Cut TapeSi2 Channel10 v , - 4.5 V20.8 nC , 9.5 nCEnhancement  
TSM320N03CX RFG


MOSFET 30V 5.5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 12432
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AUD 0.1776
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           Cut Tape       
SI1012CR-T1-GE3


null 630mA 396mO@600mA,4.5V 240mW null SC-75A MOSFETs ROHS
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Vishay 11145
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AUD 0.2264
Multiples of: 5

600 mA20 V396 mOhmsN - Channel 400 mV- 55 C+ 150 C240 mWSmd/SmtSC - 75AReelSi1 Channel4.5 V1.3 nCEnhancement Trenchfet
AO3419


Trans MOSFET P-CH 20V 3.5A 3-Pin SOT-23
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Alpha & Omega 2395
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AUD 0.0762
Multiples of: 5

3.5 A  P    1.4 WSurface Mount      Enhancement  
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