MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SUD08P06-155L-GE3


MOSFET -30V 0.155ohm@-10V -8.4A P-CH
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Vishay 25220
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AUD 0.7568
Multiples of: 2000

- 8.4 A- 60 V155 mOhmsP - Channel20 V- 2 V- 55 C+ 150 C20.8 WSmd/SmtDPAK - 2ReelSi  12.5 nC  Trenchfet
NCE6005AR


MOSFET N Trench 60V 5A 2.5V @ 250uA 35 mΩ @ 5A,4.5V SOT-223 RoHS
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NCE Power 19691
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AUD 0.1371
Multiples of: 5

                   
ASDM30N55E-R


30V 55A 4.8mΩ@10V,30A 40W N Channel DFN-8(3x3.3) MOSFETs ROHS
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Ascend 13735
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AUD 0.1051
Multiples of: 5

                   
FDN304PZ


Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
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ON Semiconductor 13677
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AUD 0.1857
Multiples of: 1

            Powertrench®      
FDMS3664S


MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
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ON Semiconductor 13669
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AUD 0.9523
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13 A , 25 A30 V8 mOhms , 2.6 mOhmsN - Channel 1.1 V- 55 C+ 150 C2.2 W , 2.5 WSMD/SMTPOWER - 56 - 8Reel , Cut TapeSi2 Channel- 20 V , - 12 V , 12 V , 20 V29 nC , 52 nCEnhancement PowerTrench
IRL80HS120


Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
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Infineon 13645
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AUD 0.6286
Multiples of: 1

            Optimos 5      
IPB120N10S405ATMA1


MOSFET N-CHANNEL 100+
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Infineon 13631
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AUD 2.2314
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           Cut Tape       
BUK7880-55ACUX


NXP Semiconductors MOSFET N-channel TrenchMOS standard level FET
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Nexperia 13611
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AUD 0.3714
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7 A55 V68 mOhmsN - Channel 2 V- 55 C+ 150 C8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel20 V12 nCEnhancement  
STQ2HNK60ZR-AP


N-Channel 600 V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
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STMicroelectronics 13580
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AUD 0.4321
Multiples of: 2000

500 mA600 V4.8 OhmsN - Channel  - 55 C+ 150 C3 WThrough HoleTO - 92 - 3TubeSi1 Channel30 V Enhancement Supermesh
BSS138


MOSFET N Trench 50V 220mA 1.6V @ 1mA 3.5 Ω @ 220mA,10V SOT-23 RoHS
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SLKORMICRO 13017
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AUD 0.0218
Multiples of: 20

                   
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