MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN6040SE-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 14495
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AUD 0.2829
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          SOT - 223 - 3 Si      
IPC100N04S51R9ATMA1


MOSFET N-CHANNEL 30/40V
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Infineon 14493
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AUD 0.8241
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           ReelSi    Aec - Q101 
HYG053N10NS1C2


100V 95A 83.3W 4.6mΩ@10V,20A 3V@250uA 153pF@25V N Channel 3744pF@25V 73nC@10V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 14486
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AUD 0.4048
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AUIRF7343QTR


Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
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Infineon 14467
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AUD 1.623
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4.7 A55 V65 mOhmsN - Channel, P - Channel20 V   2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC Aec - Q101 
RV2E014AJT2CL


MOSFET Nch 30V 1.4A, DFN1006-3, Small Signal MOSFET
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ROHM 14430
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AUD 0.2002
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1.4 A30 V290 mOhmsN - Channel 1.5 V- 55 C+ 150 C600 mWSMD/SMTDFN1006 - 3Reel , Cut TapeSi1 Channel- 12 V , + 12 V Enhancement  
PMZB390UNEYL


N-Channel 30 V 900mA (Ta) 350mW (Ta), 5.43W (Tc) Surface Mount DFN1006B-3
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Nexperia 14416
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AUD 0.0856
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900 mA30 V390 mOhmsN - Channel 450 mV- 55 C+ 150 C715 mWSmd/SmtDFN1006B - 3ReelSi1 Channel8 V1.3 nCEnhancement  
AP15N10K


100V 14.6A 85mΩ@10V,5A 30W N Channel TO-252 MOSFETs ROHS
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Quan Li 14414
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AUD 0.1826
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2N7002DWH6327XT


MOSFET OptiMOS Small Signal Transistor
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Infineon 14403
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AUD 0.0913
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300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel20 V600 pC , 600 pCEnhancementAec - Q101 
AO3416


MOSFET N Trench 20V 6.5A 1V @ 250uA 22 mΩ @ 6.5A,4.5V SOT-23-3L RoHS
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Alpha & Omega 14394
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AUD 0.096
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FDPF12N60NZ


MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE
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ON Semiconductor 14278
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AUD 1.9206
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220FTube       
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