MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQEH46NE2LM7ZCGSCATMA1


MOSFETs OptiMOS 7 Power -Transistor, 25 V
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Infineon 14323
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 1.7757

Multiples of: 1

430 A25 V480 uOhmsN - Channel 1.7 V- 55 C+ 175 C150 WSMD/SMT Reel , Cut TapeSi1 Channel12 V29 nCEnhancement OptiMOS
NTR5198NLT1G


MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
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ON Semiconductor 14249
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between Fri. 03 Jul to Thu. 09 Jul
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AUD 0.1121

Multiples of: 1

2.2 A60 V142 mOhmsN - Channel20 V2.5 V  1.5 WSmd/SmtSOT - 23 - 3Reel   5.1 nC   
QS6K1FRATR


Mosfet Array 2 N-Channel (Dual) 30V 1A (Ta) 900mW (Tc) Surface Mount TSMT6 (SC-95)
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ROHM 14230
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between Fri. 03 Jul to Thu. 09 Jul
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AUD 0.3037

Multiples of: 3000

   Dual N Channel               
ISC037N12NM6ATMA1


MOSFETs N
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Infineon 14215
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between Thu. 09 Jul to Mon. 13 Jul
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AUD 2.5929

Multiples of: 1

163 A120 V3.7 mOhmsN - Channel 3.6 V- 55 C+ 175 C214 WSMD/SMTTDSON - 8FLReel , Cut TapeSi1 Channel- 20 V , + 20 V46 nCEnhancement OptiMOS
2N7002


SOT-23 MOSFETs ROHS
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MSKSEMI 14210
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.0159

Multiples of: 50

                   
STL110N10F7


MOSFET N-CH 100V 0.005Ohm 21A STripFET VII
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STMicroelectronics 13536
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.9621

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21 A100 V6 mOhmsN - Channel20 V2 v to 4 V- 55 C+ 175 C5 WSmd/SmtPowerflat - 8 5X6ReelSi1 Channel20 V60 nC  Stripfet
WST4040


MOSFET N Trench 40V 5.8A (Tc) 1.6V @ 250uA 50 mΩ @ 3A,10V SOT-23-3L RoHS
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Winsok 12488
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.14

Multiples of: 5

                   
SSM6J507NU,LF


P-Channel 30 V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
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Toshiba 10936
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.2114

Multiples of: 5

10 A30 V20 mOhmsP - Channel 1 V + 150 C2.5 WSmd/SmtUDFN6B - 6Cut TapeSi1 Channel- 10 V13.6 nCEnhancement  
PMV30UN2R


N-Channel 20 V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
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Nexperia 9282
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between Fri. 17 Jul to Wed. 22 Jul
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AUD 0.159

Multiples of: 5

5.4 A20 V24 mOhmsN - Channel 400 mV- 55 C+ 150 C1 WSmd/SmtTO - 236AB - 3ReelSi1 Channel12 V6.2 nCEnhancement  
BSS214NH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
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Infineon 8964
Ships to you
between Thu. 09 Jul to Mon. 13 Jul
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AUD 0.0804

Multiples of: 1

            Optimos 2      
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