MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IPB042N10N3 G


MOSFET N-Channel MOSFET 20-200V
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Infineon 21047
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AUD 0.6756
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100 A100 V4.2 mOhmsN - Channel 2 V- 55 C+ 175 C214 WSmd/SmtTO - 263ReelSi1 Channel10 V88 nCEnhancement Optimos
AO4468


30V 10A 12mΩ@10V,10A 2.5W 3V@250uA N Channel SOP-8 MOSFETs ROHS
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JSMSEMI 15733
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AUD 0.0941
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IPG20N04S412AATMA1


MOSFET MOSFET
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Infineon 14155
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AUD 0.7197
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20 A40 V12.2 mOhmsN - Channel 2 V- 55 C+ 175 C41 WSMD/SMTTDSON - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V18 nCEnhancementAEC - Q100 
AP50N06K


60V 50A 60W 13mΩ@10V,20A N Channel TO-252 MOSFETs ROHS
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Quan Li 14040
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AUD 0.2166
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IRFI530NPBF


Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
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Infineon 13858
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AUD 1.0335
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11 A100 V110 mOhmsN - Channel    33 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V29.3 nC   
FH1304G6


45V PDFN-8L(3.3x3.3) MOSFETs ROHS
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Xinfeihong 11702
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AUD 0.1161
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PMV32UP


SOT-23 MOSFETs ROHS
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TECH PUBLIC 8390
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AUD 0.075
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BSC011N03LSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 4850
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AUD 1.7076
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100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V72 nCEnhancement  
ZXMN6A11ZTA


N-Channel 60 V 2.7A (Ta) 1.5W (Ta) Surface Mount SOT-89-3
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Diodes Incorporated 970
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AUD 0.408
Multiples of: 1000

3.6 A60 V120 mOhmsN - channel 1 V- 55 C+ 150 C2.6 WSmd/smtSOT - 89ReelSi1 Channel10 V5.7 nCEnhancement  
FDA59N25


MOSFET 250V N-Ch MOSFET
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ON Semiconductor 0
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AUD 1.91
Multiples of: 450

59 A250 V49 mOhmsN - Channel  - 55 C+ 150 C392 WThrough HoleTO - 3PN - 3TubeSi1 Channel30 V Enhancement  
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