MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HL3415A


20V 5.6A 42m@4.5V,5A 1.3W 620mV@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 14536
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AUD 0.0349
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IPG20N06S4L-26A


MOSFET N-Ch 55V 20A TDSON-8
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Infineon 14536
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AUD 0.7448
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20 A , 20 A60 v , 60 V21 mOhms , 21 mOhmsN - Channel 1.2 v , 1.2 V- 55 C+ 175 C33 WSmd/SmtTDSON - 8ReelSi2 Channel+/- 16 v , +/- 16 V20 nC , 20 nCEnhancementAec - Q101Optimos
TPNTGD4167CT1G


SOT23-6 MOSFETs ROHS
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TECH PUBLIC 14535
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AUD 0.1171
Multiples of: 5

                   
CMLDM7003TG TR PBFREE


MOSFET Dual N-Ch Enh FET 50Vds 50Vdg 12Vgs
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Central Semiconductor 14535
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AUD 0.227
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           Cut Tape       
IPB017N10N5ATMA1


Infineon Technologies MOSFET N-Ch 100V 180A D2PAK-2
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Infineon 14532
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AUD 4.4698
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180 A100 V2.2 mOhmsN - Channel+/- 20 V2.2 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 7ReelSi1 Channel10 V168 nCEnhancement Optimos
FDN336P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14525
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AUD 0.0476
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SQJ858AEP-T1_GE3


N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 14524
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AUD 0.9326
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58 A40 V5 mOhmsN - Channel 1.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V55 nCEnhancementAec - Q101Trenchfet
IRFRC20TRPBF-BE3


MOSFET 600V N-CH
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Vishay 14522
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AUD 1.1944
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2 A600 V4.4 OhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V18 nCEnhancement  
Hot IPD90N04S403ATMA1


MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 14496
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AUD 0.4427
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90 A40 V2.7 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V66 nCEnhancementAec - Q101 
IRFP250NPBF


MOSFET N Trench 200V 30A 4V @ 250uA 75 mΩ @ 18A,10V TO-247 (AC) RoHS
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Infineon 14340
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AUD 0.6446
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   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
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