MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ST2341S23RG


20V 5.3A 1.25W P Channel SOT-23-3L MOSFETs ROHS
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STANSON Tech 13851
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AUD 0.0687
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BUK7M17-80EX


MOSFET BUK7M17-80E/MLFPAK/REEL 7" Q1/
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Nexperia 13851
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AUD 0.517
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NTB5405NT4G


ON Semiconductor MOSFET NFET 40V 116A PB
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ON Semiconductor 13812
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AUD 1.3979
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116 A40 V5.8 mOhmsn - channel  - 55 C+ 175 C150 Wsmd/smtD2PAK - 3Reelsi1 channel20 V enhancement  
CJAC80SN10


100V 80A 6.2mΩ@10V,20A 100W 1.9V@250uA 4.5pF@50V N Channel 2100pF@50V 50nC@10V -55℃~+150℃@(Tj) PDFNWB5x6-8L MOSFETs ROHS
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Changjing Electronics Technology 13793
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AUD 0.6222
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RQ3E080BNTB


ROHM Semiconductor MOSFET
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ROHM 13774
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AUD 0.1949
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8 A30 V11 mOhmsN - Channel 2.5 V  2 WSmd/SmtH SMT - 8ReelSi1 Channel20 V14.5 nC   
IAUC70N08S5N074ATMA1


MOSFET MOSFET_75V 120V
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Infineon 13742
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AUD 0.7747
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IPC70N04S54R6ATMA1


MOSFET MOSFET_(20V,40V)
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Infineon 13716
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AUD 0.5249
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70 A40 V3.9 mOhmsN - Channel 2.2 V- 55 C+ 175 C50 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V24.2 nCEnhancementAec - Q101Optimos
SI2302


20V 4.3A 1.2W 72mΩ@4.5V,3.6A 700mV@250uA 120pF@10V N Channel 300pF@10V 5.4nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 13696
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AUD 0.021
Multiples of: 20

                   
AO3407


30V 4.1A 1.2W 48mΩ@10V,4.1A 3V@250uA 65pF@15V P Channel 650pF@15V 12.5nC@10V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 13347
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AUD 0.0343
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CRSM038N10N4


100V 100A 139W 3mΩ@10V,50A 3V@250uA 40pF@50V N Channel 3162pF@50V 49.6nC@10V -55℃~+150℃@(Tj) DFN5x6 MOSFETs ROHS
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CRMICRO 11365
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AUD 0.6877
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