MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3404A


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14356
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AUD 0.0434
Multiples of: 10

                   
BSS670S2L H6327


Infineon Technologies MOSFET N-Ch 55V 540mA SOT-23-3
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Infineon 14347
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AUD 0.0706
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NTK3043NT1G


N-Channel 20 V 210mA (Ta) 310mW (Ta) Surface Mount SOT-723
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ON Semiconductor 14343
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AUD 0.07
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   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 723 - 3Reel       
UMW30N06


MOSFET N Trench 60V 25A (Tc) 2.5V @ 250uA 30 mΩ @ 15A,10V TO-252 RoHS
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Youtai 14334
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AUD 0.1186
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SI2356DS-T1-GE3


N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 14326
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AUD 0.2118
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4.3 A40 V56 mOhmsN - Channel12 V1.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V8.1 nCEnhancement Trenchfetr
AO3400A


SOT23 MOSFETs ROHS
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TECH PUBLIC 14317
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AUD 0.0357
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BSS138 SS


50V 220mA 3.5Ω@10V,220mA 225mW 1.6V@1mA N Channel 50pF@25V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 14310
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AUD 0.0129
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IRF3415PBF


MOSFET N Trench 150V 43A 4V @ 250uA 42 mΩ @ 22A,10V TO-220 (TO-220-3) RoHS
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Infineon 14310
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AUD 1.309
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43 A150 V42 mOhmsN - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V133.3 nC   
SSM3K72CTC,L3F


MOSFET Small-signal MOSFET VDSS=60V, ID=0.15A
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Toshiba 14302
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AUD 0.0476
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150 mA60 V2.8 OhmsN - Channel 1.1 V + 150 C500 mW (1/2 w)Smd/SmtCST3C - 3Cut TapeSi1 Channel20 V350 pCEnhancement  
IPG16N10S461ATMA1


MOSFET MOSFET
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Infineon 14293
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AUD 0.8028
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16 A , 16 A100 v , 100 V53 mOhms , 53 mOhmsN - Channel 2.8 V- 55 C+ 175 C29 WSmd/SmtTDSON - 8ReelSi1 Channel+/- 20 V5.4 nCEnhancementAec - Q101 
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