MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2312-TP


MOSFET N-Channel MOSFET, SOT-23 package
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Micro Commercial Components (MCC) 14529
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AUD 0.1048
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5 A20 V31.8 mOhmsN - Channel 450 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
FDN336P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14525
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AUD 0.0476
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AOD403


MOSFET P Trench 30V 15A 3.5V @ 250uA 6 mΩ @ 20A,20V TO-252-2 (DPAK) RoHS
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Alpha & Omega 14525
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AUD 0.3514
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SQJ858AEP-T1_GE3


N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 14524
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AUD 0.9326
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58 A40 V5 mOhmsN - Channel 1.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V55 nCEnhancementAec - Q101Trenchfet
IRFRC20TRPBF-BE3


MOSFET 600V N-CH
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Vishay 14522
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AUD 1.1944
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2 A600 V4.4 OhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V18 nCEnhancement  
FQT4N20LTF


Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
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ON Semiconductor 14520
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AUD 0.5075
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            Qfet®      
SSM3K333R,LF


N-Channel 30 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F
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Toshiba 14510
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AUD 0.1269
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6 A30 V107 mOhmsN - Channel 1.3 V + 150 C2 WSmd/SmtSOT - 23FReelSi1 Channel10 V3.4 nCEnhancement  
HYG053N10NS1C2


100V 95A 83.3W 4.6mΩ@10V,20A 3V@250uA 153pF@25V N Channel 3744pF@25V 73nC@10V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 14486
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AUD 0.4048
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AUIRF7343QTR


Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
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Infineon 14467
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AUD 2.4067
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4.7 A55 V65 mOhmsN - Channel, P - Channel20 V   2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC Aec - Q101 
ZXMP4A16GTA


MOSFET 40V P-Chnl UMOS
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Diodes Incorporated 14466
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AUD 0.5155
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6.4 A40 V60 mOhmsP - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V26.1 nCEnhancement  
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