MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
7N65L


TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Youtai 28915
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AUD 0.2019
Multiples of: 5

                   
BSC050N10NS5ATMA1


100V 5mO@50A,10V N Channel TDSON-8-7 MOSFETs ROHS
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Infineon 14912
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AUD 1.3011
Multiples of: 1

           Cut Tape       
PSMN045-80YS,115


MOSFET N-CHAN 80V 17A
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Nexperia 14783
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AUD 0.3441
Multiples of: 1

24 A80 V45 mOhmsN - Channel 2 V- 55 C+ 175 C56 WSmd/SmtLFPAKReelSi1 Channel10 V12.5 nCEnhancement  
SI7469DP-T1-GE3


MOSFET 80V 28A 83W 25mohm @ 10V
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Vishay 14555
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AUD 1.8779
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28 A80 V29 mOhmsP - Channel 3 V- 55 C+ 150 C83 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V160 nCEnhancement TrenchFET
NX7002AK-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 13909
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AUD 0.0105
Multiples of: 10

                   
IRLML5103(UMW)


SOT-23 MOSFETs ROHS
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Youtai 11843
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AUD 0.0373
Multiples of: 10

                   
RD3L01BATTL1


MOSFET PCH -60V -10A PWR MOSFET
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ROHM 11482
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AUD 0.7009
Multiples of: 1

10 A60 V84 mOhmsP - Channel 1 V- 55 C+ 150 C26 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V15.2 nCEnhancement  
SSM3K333R,LF(T


MOSFET N Trench 30V 6A 2.5V @ 100uA 28 mΩ @ 5A,10V SOT-23F RoHS
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Toshiba 10194
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AUD 0.0449
Multiples of: 10

                   
SI2301DS-ES


20V 3A 1W 57m@4.5V,3A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 8710
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AUD 0.0151
Multiples of: 10

                   
NTMD4N03R2G


MOSFET 30V 4A N-Channel
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ON Semiconductor 0
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AUD 0.2526
Multiples of: 2500

   n - channel  - 55 C+ 150 C smd/smtSOIC - 8 NarrowReel       
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