MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP150NF04


STMicroelectronics MOSFET N-Channel 40 V StripFET II Pwr Mos
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STMicroelectronics 14550
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AUD 1.4545
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80 A40 V5 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel   Aec - Q101Stripfet
SQ4470EY-T1_BE3


MOSFET N-CHANNEL 60V
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Vishay 14546
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AUD 1.4096
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16 A60 V10 mOhmsN - Channel 2.5 V- 55 C+ 175 C7.1 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V68 nCEnhancement TrenchFET
NTMFS4C029NT3G


MOSFET TRENCH 6 30V NCH
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ON Semiconductor 14544
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AUD 1.0077
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           Cut Tape       
Hot IRFB4110PBF


MOSFET N Trench 100V 120A 4V @ 250uA 4.5 mΩ @ 75A,10V TO-220 (TO-220-3) RoHS
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Infineon 14249
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AUD 1.0071
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180 A100 V3.7 mOhmsN - Channel    370 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V150 nC   
IPD042P03L3GATMA1


MOSFET SMALL SIGNALP-CH
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Infineon 13943
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AUD 1.045
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70 A30 V6.8 mOhmsP - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 4.5 V131 nCEnhancement  
DMP3130LQ-7


MOSFET P-CH. MOSFET BVDSS: 25V-30V, AEC-Q101
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Diodes Incorporated 11640
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AUD 1.1786
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3.5 A30 V150 mOhmsP - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V12 nCEnhancementAec - Q101 
BSC190N15NS3GATMA1


MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
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Infineon 9700
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AUD 1.4588
Multiples of: 5000

           Reel      Optimos
FDMS2672


MOSFET 200V N-Ch UltraFET
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ON Semiconductor 8730
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AUD 5.8036
Multiples of: 3000

20 A200 V77 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtMLP - 8ReelSi1 Channel20 V Enhancement Ultrafet
BSC190N12NS3GATMA1


Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
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Infineon 3874
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AUD 0.8882
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            Optimos 3      
FQD18N20V2TM


Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
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ON Semiconductor 6
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AUD 1.3143
Multiples of: 1

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