MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HL3401


30V 4.4A 1.2W 55m@10V,4.4A 900mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 14579
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AUD 0.0299
Multiples of: 20

                   
HL2309


60V 1.25A 340m@10V,1.25A 1.25W 3V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 14579
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AUD 0.06
Multiples of: 10

                   
BSC117N08NS5ATMA1


Infineon Technologies MOSFET N-Ch 80V 49A TDSON-8
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Infineon 14574
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AUD 0.8176
Multiples of: 1

49 A80 V16.3 mOhmsN - Channel 2.2 V- 55 C+ 150 C50 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V15 nCEnhancement Optimos
2N7002H-7


N-Channel 60 V 170mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 14550
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AUD 0.0388
Multiples of: 3000

210 mA60 V7.5 OhmsN - Channel 2 V- 55 C+ 150 C510 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V352 pCEnhancement  
2N7002PW,115


MOSFET Small Signal 60V 0.3A N-CHANNEL TRENCH MOSFET
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NXP 14550
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AUD 0.0426
Multiples of: 3000

                   
BSS84AKW,115


MOSFET P-CH -50 V -150 mA
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NXP 14550
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AUD 0.0429
Multiples of: 3000

                   
NTA4001NT1G


MOSFET 20V 238mA N-Channel
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ON Semiconductor 14550
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AUD 0.0438
Multiples of: 3000

238 mA20 V3 OhmsN - Channel 500 mV- 55 C+ 150 C300 mWSmd/SmtSC - 75 - 3Cut TapeSi1 Channel4.5 V Enhancement  
DMN2046U-7


MOSFET 20V N-Ch Enh Mode 12Vgs 292pF 3.8nC
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Diodes Incorporated 14550
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AUD 0.0596
Multiples of: 3000

3.4 A20 V72 mOhmsN - Channel 400 mV- 55 C+ 150 C760 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V3.8 nCEnhancement  
FDV305N


Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
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ON Semiconductor 14550
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AUD 0.0675
Multiples of: 3000

   N Channel               
DMG3402L-7


N-Channel 30 V 4A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 14550
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AUD 0.0701
Multiples of: 3000

4 A30 V52 mOhmsN - Channel 600 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V11.7 nCEnhancement  
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