MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4407


SOP-8 MOSFETs ROHS
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TECH PUBLIC 14819
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AUD 0.15
Multiples of: 5

                   
SPD30P06P G


Infineon Technologies MOSFET P-Ch -60V -30A DPAK-2
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Infineon 14812
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AUD 0.9114
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- 30 A- 60 V75 mOhmsP - Channel 2.1 V- 55 C+ 175 C125 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V32 nCEnhancement Sipmos
IPD042P03L3GATMA1


MOSFET SMALL SIGNALP-CH
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Infineon 14807
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AUD 1.1105
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70 A30 V6.8 mOhmsP - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 4.5 V131 nCEnhancement  
ZXMS6004FFQ-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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Diodes Incorporated 14805
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AUD 0.4994
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1.3 A60 V500 mOhmsN - Channel 1.5 V- 40 C+ 150 C1.5 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel--Enhancement  
CRSS042N10N


MOSFET N Trench 100V 120A (Tc) 4V @ 250uA 4.2 mΩ @ 50A,10V T0-263 RoHS
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CRMICRO 14803
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AUD 0.7178
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SIR846BDP-T1-RE3


MOSFET N-CHANNEL 100-VD-S PowerPAK SO-8
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Vishay 14800
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AUD 1.058
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65.8 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSMD/SMTPOWERPAK - SO - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V34.5 nCEnhancement TrenchFET, PowerPAK
IAUC60N04S6L039ATMA1


MOSFET MOSFET_20V 40V
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Infineon 14796
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AUD 0.4994
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           Cut Tape       
IRLHS6276TRPBF


Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
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Infineon 14787
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AUD 0.2898
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            hexfet®      
2N7002DW


SOT-363 MOSFETs ROHS
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Hottech 14782
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AUD 0.0298
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DMG3402L-7


N-Channel 30 V 4A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 11863
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AUD 0.0589
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4 A30 V52 mOhmsN - Channel 600 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V11.7 nCEnhancement  
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