MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PMV32UP,215


MOSFET P-CH -20 V -4 A
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Nexperia 14550
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AUD 0.3286
Multiples of: 1

   P - Channel     Smd/SmtSOT - 23Reel       
FDD8880


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 14550
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AUD 0.5057
Multiples of: 2500

58 A30 V9 mOhmsN - Channel  - 55 C+ 175 C55 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
STS10P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 14550
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AUD 0.5566
Multiples of: 2500

12.5 A30 V12 mOhmsP - Channel 1 V- 55 C+ 150 C2.7 WSmd/SmtSO - 8ReelSi1 Channel- 10 V33 nCEnhancement Stripfet
STD16NF06T4


Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK
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STMicroelectronics 14550
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AUD 0.5652
Multiples of: 2500

   N Channel               
STS5DNF60L


STMicroelectronics MOSFET POWER MOSFET Dual N-CH 60V 4A
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STMicroelectronics 14550
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AUD 0.5829
Multiples of: 2500

5 A60 V45 mOhmsN - Channel 1.7 V- 55 C+ 150 C2 WSMD/SMTSOIC - 8Reel , Cut TapeSi2 Channel- 15 V , 15 V15 nCEnhancementAEC - Q100STripFET
BSC011N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
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Infineon 14550
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AUD 0.8571
Multiples of: 5000

            Optimos      
BSC067N06LS3GATMA1


Infineon Technologies MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
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Infineon 14550
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AUD 2.0811
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50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V67 nCEnhancement Optimos
SI1427EDH-T1-GE3


Vishay Semiconductors MOSFET -20V -2A 2.8W
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Vishay 8730
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AUD 0.3332
Multiples of: 3000

         Smd/SmtSOT - 363 - 6ReelSi     Trenchfet
FDD4685


Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; TO252
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ON Semiconductor 4138
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AUD 0.6727
Multiples of: 1

            Powertrench®      
SI1029X-T1-GE3


MOSFET N/P-Ch MOSFET 60V 1.25/5.0ohms@10V
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Vishay 2304
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AUD 0.32
Multiples of: 1

   N And P - Channel  - 55 C+ 150 C Smd/SmtSC - 89 - 6Reel      Trenchfet
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