MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WST3400


MOSFET N Trench 30V 7A 1.2V @ 250uA 28 mΩ @ 5A,4.5V SOT-23-3L RoHS
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Winsok 15150
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AUD 0.0656
Multiples of: 5

                   
ISC046N04NM5ATMA1


MOSFET TRENCH <= 40V
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Infineon 15126
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AUD 0.8433
Multiples of: 1

77 A40 V4.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C50 WSMD/SMTTDSON - FL - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V16 nCEnhancement  
IPN80R900P7ATMA1


Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223
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Infineon 15124
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AUD 0.6932
Multiples of: 1

            Coolmos P7      
FDS5690


MOSFET SO-8 N-CH 60V
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ON Semiconductor 15088
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AUD 0.6198
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7 A60 V28 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V Enhancement Powertrench
SI7892BDP-T1-E3


MOSFET 30V 25A 0.0042Ohm
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Vishay 15088
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AUD 1.6029
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel      Trenchfet/Powerpak
PMV15ENEAR


30V 6.2A 20mO@5.8A,10V null SOT-23 MOSFETs ROHS
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Nexperia 15067
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AUD 0.1589
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           Cut Tape       
BSC0805LSATMA1


100V 79A 83W 7mO@40A,10V null TDSON-8 MOSFETs ROHS
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Infineon 15035
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AUD 1.8033
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BSP320SH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 2.9A; 1.8W; SOT223
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Infineon 15031
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AUD 0.424
Multiples of: 1

            Sipmos      
BSZ100N06LS3GATMA1


Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
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Infineon 14162
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AUD 0.6844
Multiples of: 1

            Optimos 3      
BSP125H6433XTMA1


Infineon Technologies MOSFET N-Ch 600V 120mA SOT-223-3
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Infineon 3880
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AUD 0.3748
Multiples of: 4000

120 mA600 V45 OhmsN - Channel 1.3 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel20 V4.4 nCEnhancement  
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