MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NX138AKMYL


MOSFET MOSFET DISCRETES
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Nexperia 14968
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AUD 0.0437
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270 mA60 V4.2 OhmsN - Channel 1.5 V- 55 C+ 150 C648 mWSMD/SMTDFN1006 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V400 pCEnhancement  
FDMA86251


Fairchild Semiconductor MOSFET
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ON Semiconductor 14950
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AUD 0.573
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2.4 A150 V333 mOhmsN - Channel 2 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel20 V4.1 nCEnhancement Powertrench
BSL215C H6327


Infineon Technologies MOSFET SMALL SIGNALP-CH
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Infineon 14894
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AUD 0.195
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1.5 A20 V108 mOhms , 102 mOhmsP - Channel 700 mV , 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6Reel-1 Channel12 V730 pC , - 3 nCEnhancement  
STP40NF10L


Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; TO220-3
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STMicroelectronics 14845
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AUD 1.0187
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ZXMP6A17GTA


P-Channel 60 V 3A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 14836
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AUD 0.2875
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   P - channel  - 55 C+ 150 C Smd/smtSOT - 223Reel       
AO4407


SOP-8 MOSFETs ROHS
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TECH PUBLIC 14819
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AUD 0.15
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ZVP4525GTA


P-Channel 250 V 265mA (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 14807
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AUD 0.376
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265 mA285 V10 OhmsP - Channel 2 V- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel40 V3.45 nCEnhancement  
ZXMS6004FFQ-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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Diodes Incorporated 14805
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AUD 0.4994
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1.3 A60 V500 mOhmsN - Channel 1.5 V- 40 C+ 150 C1.5 WSMD/SMTSOT - 23F - 3Reel , Cut TapeSi1 Channel--Enhancement  
CRSS042N10N


MOSFET N Trench 100V 120A (Tc) 4V @ 250uA 4.2 mΩ @ 50A,10V T0-263 RoHS
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CRMICRO 14803
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AUD 0.7178
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SIR846BDP-T1-RE3


MOSFET N-CHANNEL 100-VD-S PowerPAK SO-8
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Vishay 14800
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AUD 1.058
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65.8 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSMD/SMTPOWERPAK - SO - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V34.5 nCEnhancement TrenchFET, PowerPAK
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