MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVS4001NT1G


ON Semiconductor MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 14550
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AUD 0.1062
Multiples of: 3000

270 mA30 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4 V0.9 nCEnhancementAec - Q101 
3LP01M-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 14550
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AUD 0.1146
Multiples of: 1

100 mA30 V10.4 Ohmsp - channel    150 mWsmd/smtSOT - 323Reelsi1 channel 1.43 nC   
IRLML0060TRPBF


MOSFET N Trench 60V 2.7A 2.5V @ 25uA 92 mΩ @ 2.7A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 14550
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AUD 0.1229
Multiples of: 5

            Hexfet®      
DMN10H220L-7


Diodes Incorporated MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W
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Diodes Incorporated 14550
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AUD 0.1356
Multiples of: 3000

1.6 A100 V220 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel- +/- 16 V8.3 nCEnhancement  
ZVP3306FTA


60V 90mA 14O@10V,200mA 330mW P Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 14550
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AUD 0.1385
Multiples of: 3000

90 mA60 V14 OhmsP - Channel 1.5 V- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
DMC25D1UVT-7


Diodes Incorporated MOSFET 20V Enh Mode FET
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Diodes Incorporated 14550
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AUD 0.161
Multiples of: 1

500 mA , - 3.5 A25 v , - 12 V4 Ohms , 100 mOhmsN - Channel, P - Channel 650 mV , - 350 mV- 55 C+ 150 C1.3 WSmd/SmtTSOT - 26 - 6ReelSi2 Channel8 v , 8 V0.9 nC , 24.5 nCEnhancement  
ZXM61P03FTA


MOSFET 30V P-Chnl HDMOS
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Diodes Incorporated 14550
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AUD 0.1674
Multiples of: 3000

1.1 A30 V350 mOhmsP - Channel 1 V- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.8 nCEnhancement  
Si2303CDS-T1-E3


MOSFET 30V 2.7A 2.3W 190mohm @ 10V
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Vishay 14550
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AUD 0.1808
Multiples of: 3000

2.7 A30 V190 mOhmsP - Channel 1 V- 55 C+ 150 C2.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V4 nCEnhancement Trenchfet
ZXM61N02FTA


MOSFET 20V N-Chnl HDMOS
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Diodes Incorporated 14550
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AUD 0.1813
Multiples of: 3000

1.7 A20 V180 mOhmsN - Channel 700 mV- 55 C+ 150 C806 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V3.4 nCEnhancement  
NTJS3151PT1G


MOSFET 12V 3.3A P-Channel
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ON Semiconductor 14550
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AUD 0.1866
Multiples of: 1

3.3 A12 V133 mOhmsP - Channel  - 55 C+ 150 C625 mWSmd/SmtSC - 88ReelSi1 Channel12 V Enhancement  
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