MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB4115PBF


Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
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Infineon 24250
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AUD 0.914
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
STFW3N150


Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
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STMicroelectronics 17119
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AUD 1.4837
Multiples of: 1

            Powermesh      
IAUC100N08S5N043ATMA1


MOSFET MOSFET_75V 120V
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Infineon 14533
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AUD 1.0701
Multiples of: 1

           Cut Tape       
IRFRC20TRPBF-BE3


MOSFET 600V N-CH
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Vishay 14522
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AUD 1.1944
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2 A600 V4.4 OhmsN - Channel 4 V- 55 C+ 150 C42 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V18 nCEnhancement  
BSS138LT1G-ES


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 14491
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AUD 0.015
Multiples of: 20

                   
CJT04N15


MOSFET N Trench 150V 4A 2.5V @ 250uA 160 mΩ @ 4A,10V SOT-223 RoHS
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Changjing Electronics Technology 14399
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AUD 0.1684
Multiples of: 5

                   
YJL2302B


MOSFET SOT-23-3L RoHS
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Yangjie 14375
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AUD 0.0256
Multiples of: 20

                   
TPM2008P3


MOSFET DFN1006-3L RoHS
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TECH PUBLIC 14123
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AUD 0.0258
Multiples of: 20

                   
IRF530NSTRLPBF


MOSFET N Trench 100V 17A (Tc) 4V @ 250uA 90 mΩ @ 9A,10 TO-263-2 RoHS
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Infineon 14104
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AUD 0.5986
Multiples of: 1

17 A100 V90 mOhmsN - Channel 4 V- 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel20 V37 nC   
SI4435DDY-T1-GE3


MOSFET 30V 11.4A 5.0W 24mohm @ 10V
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Vishay 12057
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AUD 0.2343
Multiples of: 5

11.4 A30 V24 mOhmsP - Channel 1 V- 55 C+ 150 C5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel- 10 V50 nCEnhancement Trenchfet
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