MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HL3400


30V 5.6A 1.2W 21m@10V,5.6A 900mV@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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hongjiacheng 14674
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AUD 0.026
Multiples of: 20

                   
IPB70N10S3L-12


Infineon Technologies MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
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Infineon 14652
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AUD 2.2452
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70 A100 V12 mOhmsN - Channel20 V - 55 C+ 175 C125 WSmd/SmtD2PAK - 3ReelSi1 Channel20 V60 nC Aec - Q101Optimos
SUD50P06-15L-E3


MOSFET P-CH 60V 50A
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Vishay 14639
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AUD 1.8683
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           -Si     Trenchfet
SIZF920DT-T1-GE3


MOSFET Dual 30V Vds PowerPAIR 6x5F
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Vishay 14636
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AUD 0.3143
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76 A , 197 A30 V3.07 mOhms , 1.05 mOhmsN - Channel 1.1 V- 55 C+ 150 C28 w , 74 WSmd/SmtPowerpair 6X5FCut TapeSi2 Channel- 16 v , 20 v , - 12 v , 16 v29 nC , 125 nCEnhancement Trenchfet; Powerpak
AP3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 32 mΩ @ 5.8A,10V SOT23 RoHS
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Quan Li 14627
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AUD 0.0465
Multiples of: 20

                   
TK6A80E,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba 14627
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AUD 0.6137
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HYG090ND06LS1C2


60V 56A 60W 8mΩ@10V,20A 2 N-Channel PDFN-8(5.2x5.9) MOSFETs ROHS
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HuaYi 14622
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AUD 0.3622
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IAUZ30N06S5L140ATMA1


N-Channel 60V 30A (Tj) 33W (Tc) Surface Mount PG-TSDSON-8-32
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Infineon 14613
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AUD 0.426
Multiples of: 1

          8 - PowertdfnTape And ReelMosfet (Metal Oxide)      
DMP6023LE-13


Diodes Incorporated MOSFET P-Ch 60V Enh Mode 145W 20Vgs 2569pF
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Diodes Incorporated 14564
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AUD 0.3345
Multiples of: 5

- 7 A- 60 V28 mOhmsP - Channel - 3 V- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 4Reel-1 Channel+/- 20 V53.1 nCEnhancement  
TSM240N03CX RFG


MOSFET N Trench 30V 6.5A (Tc) 2.5V @ 250uA 24 mΩ @ 6A,10V SOT-23 RoHS
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Taiwan Semiconductor 12806
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AUD 0.1746
Multiples of: 1

6.5 A30 V17 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement  
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