MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN65D9L-7


MOSFET MOSFET BVDSS: 41V~60V SOT23 T&R 3K
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Diodes Incorporated 14611
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AUD 0.0437
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           Cut Tape       
AO4411(UMW)


SOP-8 MOSFETs ROHS
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Youtai 14589
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AUD 0.0852
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IRLR2705TRPBF


Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
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Infineon 14582
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AUD 0.4016
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28 A55 V65 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSmd/SmtDPAKReelSi1 Channel16 V16.7 nCEnhancement  
IPD110N12N3GATMA1


N-Channel 120 V 75A (Tc) 136W (Tc) Surface Mount PG-TO252-3
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Infineon 14581
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AUD 1.3549
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75 A120 V9.2 mOhmsN - Channel 3 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3Reel-1 Channel+/- 20 V49 nCEnhancement Optimos
HL3401


30V 4.4A 1.2W 55m@10V,4.4A 900mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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hongjiacheng 14579
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AUD 0.0299
Multiples of: 20

                   
HL2309


60V 1.25A 340m@10V,1.25A 1.25W 3V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 14579
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AUD 0.06
Multiples of: 10

                   
6G03L


SOT-23-6L MOSFETs ROHS
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HL 14554
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AUD 0.0407
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IAUC60N04S6L030HATMA1


Mosfet Array 2 N-Channel (Half Bridge) 40V 60A (Tj) 75W (Tc) Surface Mount PG-TDSON-8-56
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Infineon 14554
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AUD 1.1681
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119 A40 V3 mOhmsN - Channel 2 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Cut Tape , ReelSi1 Channel- 16 V , + 16 V27 nCEnhancement OptiMOS
2N7002PW,115


MOSFET Small Signal 60V 0.3A N-CHANNEL TRENCH MOSFET
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NXP 14550
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AUD 0.0426
Multiples of: 3000

                   
SSM3K7002CFU,LF


MOSFET Small-Signal MOSFET
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Toshiba 0
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AUD 0.0299
Multiples of: 3000

170 mA60 V4.7 Ohmsn - channel 1.1 V + 150 C700 mWsmd/smtSOT - 323 - 3Reelsi1 channel+/- 20 V0.27 nCenhancement  
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