MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC196N10NSGATMA1


Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
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Infineon 14461
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AUD 2.6145
Multiples of: 1

            Optimos 2      
RRF015P03GTL


MOSFET 4V Drive Pch MOSFET Drive Pch
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ROHM 14453
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AUD 0.2137
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1.5 A30 V115 mOhmsP - Channel 2.5 V- 55 C+ 150 C800 mWSmd/SmtSOT - 323T - 3Cut TapeSi1 Channel20 V6.4 nCEnhancement  
NVTFS6H860NLTAG


MOSFET MOSFET - Power Single N-Channel 80 V 20 mO 30 A - NVTFS6H860NL WDFN8 Pb-Free
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ON Semiconductor 14437
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AUD 0.7213
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           Cut Tape       
BUK7Y6R0-60EX


N-Channel 60 V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 14428
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AUD 0.957
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100 A60 V4 mOhmsN - Channel20 V3 V- 55 C+ 175 C195 WSmd/SmtLFPAK56 - 4ReelSi1 Channel10 V45.4 nCEnhancement  
SQJ858AEP-T1_GE3


N-Channel 40 V 58A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 14419
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AUD 0.4564
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58 A40 V5 mOhmsN - Channel 1.5 V- 55 C+ 175 C48 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V55 nCEnhancementAEC - Q101TrenchFET
2N7002DWH6327XT


MOSFET OptiMOS Small Signal Transistor
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Infineon 14403
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AUD 0.0913
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300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 363ReelSi2 Channel20 V600 pC , 600 pCEnhancementAec - Q101 
S-LBSS84LT1G


50V 130mA 1.8mO@10V,100mA 225mW P Channel SOT-23 MOSFETs ROHS
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Leshan 14336
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AUD 0.049
Multiples of: 20

                   
NCE0103Y


MOSFET N Trench 100V 3A 2V @ 250uA 160 mΩ @ 3A,10V SOT-23-3L RoHS
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NCE Power 13720
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AUD 0.1254
Multiples of: 5

                   
RV1C001ZPT2L


MOSFET Small Signal MOSFET
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ROHM 3209
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AUD 0.1976
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100 mA20 V3.8 OhmsP - Channel 1 V- 55 C+ 150 C100 mWSmd/SmtVML0806 - 3ReelSi1 Channel10 V    
DMN32D2LFB4-7


30V 300mA 350mW 1.2O@4V,100mA N Channel X2-DFN1006-3 MOSFETs ROHS
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Diodes Incorporated 2657
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AUD 0.0617
Multiples of: 10

300 mA30 V1.2 OhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtDFN - 3ReelSi1 Channel10 V Enhancement  
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