MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3J356R,LF


MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 23280
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AUD 0.1099
Multiples of: 3000

2 A60 V400 mOhmsP - Channel 800 mV + 150 C2 WSmd/SmtSOT - 23F - 3ReelSi1 Channel- 4 V8.3 nCEnhancement  
MMBF170LT1G


N-Channel 60 V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
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ON Semiconductor 14550
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AUD 0.056
Multiples of: 1

500 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
DMN2046U-7


MOSFET 20V N-Ch Enh Mode 12Vgs 292pF 3.8nC
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Diodes Incorporated 14550
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AUD 0.0812
Multiples of: 1

3.4 A20 V72 mOhmsN - Channel 400 mV- 55 C+ 150 C760 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V3.8 nCEnhancement  
AO3414


MOSFET N Trench 20V 3A 1V @ 250uA 50 mΩ @ 4.2A,4.5V SOT-23-3L RoHS
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Alpha & Omega 14550
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AUD 0.0855
Multiples of: 3000

3 A  N    1.4 WSurface Mount      Enhancement  
3LP01M-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 14550
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AUD 0.1146
Multiples of: 1

100 mA30 V10.4 Ohmsp - channel    150 mWsmd/smtSOT - 323Reelsi1 channel 1.43 nC   
ZVP3306FTA


60V 90mA 14O@10V,200mA 330mW P Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 14550
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AUD 0.2056
Multiples of: 3000

90 mA60 V14 OhmsP - Channel 1.5 V- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
DMN3150LW-7


MOSFET 0.35W 28V 1.6A
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Diodes Incorporated 14550
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AUD 0.1464
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 323 - 3Reel       
RRF015P03GTL


MOSFET 4V Drive Pch MOSFET Drive Pch
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ROHM 14550
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AUD 0.154
Multiples of: 1

1.5 A30 V115 mOhmsP - Channel 2.5 V- 55 C+ 150 C800 mWSmd/SmtSOT - 323T - 3Cut TapeSi1 Channel20 V6.4 nCEnhancement  
BSS139H6327XTSA1


Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
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Infineon 14550
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AUD 0.1586
Multiples of: 3000

            Sipmos      
DMP2004VK-7


MOSFET Dual P-Channel
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Diodes Incorporated 931
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AUD 0.2404
Multiples of: 1

530 mA20 V900 mOhmsP - Channel  - 65 C+ 150 C400 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V Enhancement  
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