MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84AKW,115


MOSFET P-CH -50 V -150 mA
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NXP 14550
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AUD 0.0429
Multiples of: 3000

                   
2N7002H-7


N-Channel 60 V 170mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 14550
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AUD 0.045
Multiples of: 3000

210 mA60 V7.5 OhmsN - Channel 2 V- 55 C+ 150 C510 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V352 pCEnhancement  
2N7002KW


MOSFET NCHAN Enhance MOSFET
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ON Semiconductor 14550
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AUD 0.1063
Multiples of: 3000

310 mA60 V3 OhmsN - Channel    300 mWSmd/SmtSOT - 323ReelSi1 Channel  Enhancement  
NVS4001NT1G


ON Semiconductor MOSFET
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ON Semiconductor 14550
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AUD 0.1444
Multiples of: 3000

270 mA30 V1.5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4 V0.9 nCEnhancementAec - Q101 
3LP01M-TL-H


MOSFET SWITCHING DEVICE
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ON Semiconductor 14550
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AUD 0.1218
Multiples of: 1

100 mA30 V10.4 Ohmsp - channel    150 mWsmd/smtSOT - 323Reelsi1 channel 1.43 nC   
DMN2065UW-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K
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Diodes Incorporated 14550
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AUD 0.131
Multiples of: 3000

3.1 A20 V140 mOhmsN - Channel12 V1 V- 55 C+ 150 C700 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4.5 V5.4 nCEnhancement  
Si2347DS-T1-GE3


Vishay Semiconductors MOSFET -30V .042Ohm10V 5A P-Ch G-III
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Vishay 14550
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AUD 0.1535
Multiples of: 3000

- 3.9 A- 30 V68 mOhmsP - Channel - 1 v to - 2.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V6.9 nCEnhancement Trenchfet
NDS9407


Transistor: P-MOSFET; unipolar; -60V; -3A; 2.5W; SO8
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ON Semiconductor 14550
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AUD 0.1778
Multiples of: 2500

            powertrench®      
IRF7476TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 14550
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AUD 0.1917
Multiples of: 5

                   
DMP2004WK-7


Diodes Incorporated MOSFET 250mW -20Vdss
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Diodes Incorporated 14550
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AUD 0.2131
Multiples of: 3000

400 mA- 20 V900 mOhmsP - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel8 V Enhancement  
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