MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSL215CH6327XTSA1


Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 14550
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AUD 0.246
Multiples of: 3000

            Optimos 2      
WSD4070DN


40V 68A 4.5mΩ@10V,7A 3.1W N Channel PDFN3333-8 MOSFETs ROHS
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Winsok 14550
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AUD 0.3253
Multiples of: 1

                   
FDC6305N


mosfet 2 n channel (dual) 20v 2.7a 1.5v @ 250ua 80 m @ 2.7a,4.5v tsot-23-6 rohs
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ON Semiconductor 14550
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AUD 0.3373
Multiples of: 1

   Dual N Channel               
BSZ130N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
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Infineon 14550
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AUD 0.3534
Multiples of: 5000

            Optimos 3      
BSS126H6906XTSA1


Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R
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Infineon 14550
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AUD 0.3772
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21 mA600 V700 OhmsN - Channel 2.7 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3Tape And ReelSi1 Channel20 V2.1 nCEnhancement  
SI2307BDS-T1-E3


MOSFET 30V 3.2A 1.25W
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Vishay 14550
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AUD 0.3968
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3Reel      Trenchfet
SI7113ADN-T1-GE3


MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
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Vishay 14550
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AUD 0.4207
Multiples of: 1

10.8 A100 V186 mOhmsP - Channel 1.1 V- 55 C+ 150 C27.8 WSmd/SmtPOWERPAK - 1212 - 8Cut TapeSi1 Channel20 V5.65 nC   
RQ6P015SPTR


ROHM Semiconductor MOSFET
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ROHM 14550
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AUD 0.44
Multiples of: 1

1.5 A100 V350 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6ReelSi1 Channel20 V32 nCEnhancement  
ZXMN10B08E6TA


MOSFET 100V N-Chnl UMOS
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Diodes Incorporated 14550
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AUD 0.4663
Multiples of: 3000

1.9 A100 V230 mOhmsN - Channel  - 55 C+ 150 C1.1 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel20 V Enhancement  
FDN339AN


Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
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ON Semiconductor 5820
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AUD 0.2562
Multiples of: 3000

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