MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BUK6D210-60EX


MOSFET BUK6D210-60ESOT1220SOT1220
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Nexperia 14221
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AUD 0.1351
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5.7 A60 V210 mOhmsN - Channel 1.3 V- 55 C+ 175 C15 WSmd/SmtDfn2020md - 6Cut TapeSi1 Channel20 V3.8 nCEnhancementAec - Q101 
DMN6069SFGQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 14210
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AUD 0.2912
Multiples of: 5

18 A60 V39 mOhmsN - Channel 1 V- 55 C+ 150 C2.4 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V25 nCEnhancementAec - Q101 
BSS138


50V 220mA 3.5O@10V,220mA 350mW N Channel SOT-23 MOSFETs ROHS
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LGE 14162
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AUD 0.0243
Multiples of: 20

                   
IPG20N04S412AATMA1


MOSFET MOSFET
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Infineon 14155
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AUD 0.7291
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20 A40 V12.2 mOhmsN - Channel 2 V- 55 C+ 175 C41 WSMD/SMTTDSON - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V18 nCEnhancementAEC - Q100 
2N7002K-T1-GE3-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS
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ElecSuper 14142
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AUD 0.0166
Multiples of: 20

                   
CRTD030N04L


MOSFET N Channel 40V 80A(Tc) 3V @ 250uA 3.3mO @ 40A,10V TO-252 RoHS
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CRMICRO 14127
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AUD 0.3342
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TQM138KDCU6 RFG


MOSFETs 60V, 0.32A, Dual N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 14118
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AUD 0.0801
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320 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C320 mWSMD/SMTSOT - 363 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.8 nCEnhancementAEC - Q101 
AO3403A


SOT-23-3 MOSFETs ROHS
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Youtai 13754
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AUD 0.0326
Multiples of: 20

                   
IPT015N10NF2SATMA1


MOSFET TRENCH >=100V
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Infineon 13128
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AUD 1.1976
Multiples of: 1

315 A100 V1.5 mOhmsN - Channel 2.2 V- 55 C+ 175 C300 WSMD/SMTHSOF - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V161 nCEnhancement  
SI7615ADN-T1-GE3


MOSFET -20V 4.4mOhm@10V 35A P-Ch G-III
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Vishay 1540
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AUD 0.5473
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   P Channel      POWERPAK 1212 - 8Reel       
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