MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI8800EDB-T2-E1


MOSFET 20Volt N-Channel Micro Foot-4
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Vishay 17460
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AUD 0.2442
Multiples of: 3000

   N - Channel  - 55 C+ 125 C Smd/SmtMICRO - FOOT - 4Reel       
SI2329DS-T1-GE3


MOSFET -8V Vds 5V Vgs SOT-23
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Vishay 14550
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AUD 0.278
Multiples of: 3000

6 A8 V30 mOhmsP - Channel 350 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V19.3 nCEnhancement Trenchfet
SI3459BDV-T1-GE3


MOSFET 60V 2.9A 3.3W 216mohm @ 10V
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Vishay 14550
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AUD 0.3731
Multiples of: 3000

2.9 A60 V216 mOhmsP - Channel 3 V- 55 C+ 150 C3.3 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , 20 V7.7 nCEnhancement TrenchFET
SQ3427AEEV-T1_GE3


MOSFET -60V Vds -20V Vgs AEC-Q101 Qualified
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Vishay 14550
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AUD 0.3993
Multiples of: 3000

5.3 A60 V95 mOhmsP - Channel 2.5 V- 55 C+ 175 C5 WSMD/SMTTSOP - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V15.3 nCEnhancementAEC - Q101TrenchFET
SI2399DS-T1-GE3


Vishay Semiconductors MOSFET -20V -6A 2.5W
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Vishay 14550
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AUD 0.4948
Multiples of: 3000

6 A20 V34 mOhmsP - Channel 600 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V10 nCEnhancement Trenchfet
SI2306BDS-T1-GE3


Vishay Semiconductors MOSFET 30V 4.0A 1.25W 47mohm 4.5V
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Vishay 14550
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AUD 0.5317
Multiples of: 3000

3.16 A30 V47 mOhmsN - Channel20 V - 55 C+ 150 C750 mWSmd/SmtSOT - 23 - 3ReelSi   Enhancement Trenchfet
STL9P3LLH6


MOSFET LGS LV MOSFET
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STMicroelectronics 14550
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AUD 0.6727
Multiples of: 3000

- 9 A- 30 V12 mOhmsP - Channel - 1 V- 55 C+ 150 C3 WSmd/SmtPowerflat - 8Cut TapeSi1 Channel+/- 20 V24 nCEnhancement Stripfet
DMP4015SK3-13


Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60 TO252,2.5K
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Diodes Incorporated 9700
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AUD 0.5836
Multiples of: 2500

14 A40 V11 mOhmsP - Channel 1.5 V- 55 C+ 150 C3.5 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 25 V , 25 V47.5 nCEnhancement  
SI1029X-T1-GE3


MOSFET N/P-Ch MOSFET 60V 1.25/5.0ohms@10V
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Vishay 8730
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AUD 0.2165
Multiples of: 3000

   N And P - Channel  - 55 C+ 150 C Smd/SmtSC - 89 - 6Reel      Trenchfet
ZVN3306FTA


MOSFET N-CH 60V 150MA SOT23-3 ELECTRONICS PART
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ON Semiconductor 0
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AUD 0.2077
Multiples of: 3000

                   
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