MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7461DP-T1-GE3


MOSFET 60V 14.4A 5.4W 14.5mohm @ 10V
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Vishay 14550
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AUD 1.3899
Multiples of: 3000

14.4 A60 V14.5 mOhmsP - Channel 1 V- 55 C+ 150 C5.4 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel10 V121 nCEnhancement Trenchfet
FDMC86259P


MOSFET PT5 150/25V PchMOSFET
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ON Semiconductor 14550
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AUD 1.4627
Multiples of: 3000

- 13 A- 150 V99 mOhmsP - Channel25 V- 2.8 V- 55 C+ 150 C62 WSmd/SmtPOWER33 - 3ReelSi1 Channel25 V22 nC  Powertrench Power Clip
STB100N10F7


MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
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STMicroelectronics 14550
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AUD 1.706
Multiples of: 1000

80 A100 V8 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C150 WSmd/SmtD2PAK - 2Reel   61 nC   
STB45N65M5


MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh V MOS
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STMicroelectronics 14550
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AUD 6.6978
Multiples of: 1000

35 A650 V78 mOhmsN - Channel    208 WThrough HoleD2PAKReelSi1 Channel    Mdmesh
PSMN011-60MLX


N-Channel 60 V 61A (Tc) 91W (Tc) Surface Mount LFPAK33
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Nexperia 14548
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AUD 0.4269
Multiples of: 1

61 A60 V11.3 mOhmsN - Channel20 V1.7 V- 55 C+ 175 C91 WSmd/SmtLFPAK33 - 4ReelSi1 Channel20 V37.2 nCEnhancement  
SQ4470EY-T1_BE3


MOSFET N-CHANNEL 60V
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Vishay 14546
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AUD 1.4096
Multiples of: 1

16 A60 V10 mOhmsN - Channel 2.5 V- 55 C+ 175 C7.1 WSMD/SMTSO - 8Trenchfet , Cut Tape , ReelSi1 Channel- 20 V , + 20 V68 nCEnhancement TrenchFET
NTMFS4C029NT3G


MOSFET TRENCH 6 30V NCH
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ON Semiconductor 14544
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AUD 1.0077
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           Cut Tape       
IPG20N06S4L-26A


MOSFET N-Ch 55V 20A TDSON-8
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Infineon 14536
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AUD 0.7448
Multiples of: 1

20 A , 20 A60 v , 60 V21 mOhms , 21 mOhmsN - Channel 1.2 v , 1.2 V- 55 C+ 175 C33 WSmd/SmtTDSON - 8ReelSi2 Channel+/- 16 v , +/- 16 V20 nC , 20 nCEnhancementAec - Q101Optimos
CMLDM7003TG TR PBFREE


MOSFET Dual N-Ch Enh FET 50Vds 50Vdg 12Vgs
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Central Semiconductor 14535
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AUD 0.227
Multiples of: 1

           Cut Tape       
DMP3160L-7


P-Channel 30 V 2.7A (Ta) 1.08W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 14530
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AUD 0.0703
Multiples of: 10

2.7 A30 V122 mOhmsP - Channel 1.3 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V8.2 nCEnhancement  
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