MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF520NPBF


MOSFET N Trench 100V 9.7A 4V @ 250uA 200 mΩ @ 5.7A,10V TO-220 (TO-220-3) RoHS
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Infineon 16355
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AUD 0.4454
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            Hexfet®      
SP000928950


MOSFET N-Ch 55V 540mA SOT-23-3
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Infineon 14737
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AUD 0.0691
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540 mA55 V346 mOhmsN - Channel 1.2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V2.26 nCEnhancementAec - Q101 
IRF3709ZSTRRPBF


MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
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Infineon 14717
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AUD 1.1189
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87 A30 V7.8 mOhmsN - Channel    79 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V17 nC   
FDN337N


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14714
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AUD 0.0604
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BSS139 H6906


Infineon Technologies MOSFET
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Infineon 14710
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AUD 0.4306
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100 mA250 V7.8 Ohmsn - channel 2.1 V- 55 C+ 150 C360 mWsmd/smtSOT - 23 - 3Reelsi1 channel20 V3.5 nCdepletion  
SI2325DS-T1-GE3


MOSFET -150V Vds 20V Vgs SOT-23
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Vishay 14698
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AUD 0.573
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         Smd/SmtSOT - 23 - 3Cut TapeSi     Trenchfet
SI2310-TP


MOSFET N-Channel MOSFET, SOT-23 package
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Micro Commercial Components (MCC) 14656
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AUD 0.2507
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3 A60 V105 mOhmsN - Channel 500 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V6 nCEnhancement  
NCE6008AS


MOSFET N Trench 60V 8A (Tc) 2.2V @ 250uA 20 mΩ @ 8A,10V SOP-8 RoHS
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NCE Power 14630
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AUD 0.2197
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AOD4185


40V 40A 40.3W 19mΩ@10V P Channel TO-252-2L MOSFETs ROHS
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HXY MOS 12930
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AUD 0.2752
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2300


SOT-23 MOSFETs ROHS
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HL 12755
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AUD 0.0174
Multiples of: 50

                   
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