MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA70R600P7SXKSA1


MOSFET
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Infineon 15091
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AUD 0.5139
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8.5 A700 V490 mOhmsN - Channel 2.5 V- 40 C+ 150 C24.9 WThrough HoleTO - 220FP - 3TubeSi1 Channel16 V10.5 nCEnhancement Coolmos
SI7892BDP-T1-E3


MOSFET 30V 25A 0.0042Ohm
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Vishay 15088
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AUD 1.6029
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel      Trenchfet/Powerpak
IPD25CN10NGATMA1


Infineon Technologies MOSFET
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Infineon 15086
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AUD 0.6928
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35 A100 V19 mOhmsN - Channel+/- 20 V3 V- 55 C+ 175 C71 WSmd/SmtPG - TO 252 - 3Reel- 20 V23 nCEnhancement Optimos
2SK3018T106


N-Channel 30 V 100mA (Ta) 200mW (Ta) Surface Mount UMT3
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ROHM 15073
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AUD 0.0451
Multiples of: 10

100 mA30 V8 OhmsN - Channel 800 mV- 55 C150 C200 mW (1/5 w)SmdsmtSOT - 23 - 3ReelSi1 Channel4 V Enhancement  
TSM320N03CX RFG


MOSFET 30V 5.5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 15062
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AUD 0.1822
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           Cut Tape       
AO3407


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics 15054
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AUD 0.0404
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IRF7470TRPBF


MOSFET N Trench 40V 10A 2V @ 250uA 13 mΩ @ 10A,10V SO8 RoHS
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Infineon 15035
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AUD 1.3504
Multiples of: 500

10 A40 V13 mOhmsN - Channel 2 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel12 V29 nC   
BSC0805LSATMA1


100V 79A 83W 7mO@40A,10V null TDSON-8 MOSFETs ROHS
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Infineon 15035
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AUD 1.8033
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           Cut Tape       
BSP320SH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 2.9A; 1.8W; SOT223
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Infineon 15031
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AUD 0.424
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            Sipmos      
IPD60R1K4C6ATMA1


MOSFET LOW POWER_LEGACY
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Infineon 15000
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AUD 0.4663
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3.2 A600 V1.26 OhmsN - Channel 2.5 V- 55 C+ 150 C28.4 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V9.4 nCEnhancement Coolmos
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