MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HYG015N04LS1C2


40V 150A 1.4mΩ@10V,20A 75W 1.9V@250uA 33pF@25V N Channel 4.05nF@25V 27nC@4.5V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 23093
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AUD 0.5317
Multiples of: 1

                   
NTNS3164NZT5G


MOSFET NFET SOT883 20V 245MA 1.5
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ON Semiconductor 20370
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AUD 0.1372
Multiples of: 1

361 mA20 V700 mOhmsN - Channel     Smd/SmtXDFN3 - 3ReelSi      
IRFP250NPBF


MOSFET N Trench 200V 30A 4V @ 250uA 75 mΩ @ 18A,10V TO-247 (AC) RoHS
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Infineon 17180
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AUD 0.8547
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
NCE60P04R


60V 4.3A 106mO@10V,4A 3.1W P Channel SOT-223 MOSFETs ROHS
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NCE Power 14249
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AUD 0.2593
Multiples of: 5

                   
NDT3055L


SOT-223 MOSFETs ROHS
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TECH PUBLIC 14060
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AUD 0.2124
Multiples of: 5

                   
IRFZ44ESTRLPBF


Transistor: N-MOSFET; unipolar; 60V; 48A; 110W; D2PAK
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Infineon 12658
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AUD 1.1668
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48 A60 V23 mOhmsN - Channel    110 WSmd/SmtD2PAKReelSi1 Channel20 V40 nC   
IRFH7440TRPBF


MOSFET N Trench 40V 85A (Tc) 3.9V @ 100uA 2.4 mΩ @ 50A,10V PG-TDSON-8 RoHS
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Infineon 11014
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AUD 0.3863
Multiples of: 1

159 A40 V2.7 mOhmsN - Channel 3.9 V- 55 C+ 150 C104 WSmd/SmtPQFN - 8ReelSi1 Channel20 V92 nCEnhancement Strongirfet
STB21N90K5


Transistor: N-MOSFET; unipolar; 900V; 11.6A; 250W; D2PAK
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STMicroelectronics 5820
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AUD 6.1423
Multiples of: 1000

            Supermesh      
ZXMN6A11GTA


MOSFET 60V N-Chnl UMOS
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Diodes Incorporated 2910
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AUD 0.5037
Multiples of: 1000

4.4 A60 V120 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223ReelSi1 Channel10 V5.7 nCEnhancement  
DMN4060SVT-7


mosfet n trench 45v 4.8a 3v @ 250ua 46 m @ 4.3a,10v tsot-26 rohs
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Diodes Incorporated 976
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AUD 0.2671
Multiples of: 1

4.8 A45 V46 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V22.4 nCEnhancement  
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