MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SN7002NH6327-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ElecSuper 13023
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AUD 0.011
Multiples of: 50

                   
DI0A35N06PGK-AQ


MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101
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Diotec 13011
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AUD 0.0559
Multiples of: 1

350 mA60 V1.4 OhmsN - Channel 1 V- 55 C+ 150 C223 mWSMD/SMTSOT - 883 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.9 nCEnhancementAEC - Q101 
BSZ120P03NS3 G


Infineon Technologies MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
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Infineon 12997
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AUD 0.5257
Multiples of: 1

- 40 A- 30 V12 mOhmsP - Channel 3.1 V- 55 C+ 150 C52 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V45 nCEnhancement Optimos
DMN2320UFB4-7B


MOSFET 20V N-Ch Enh FET 8Vgss .52W 71pF
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Diodes Incorporated 12989
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AUD 0.2885
Multiples of: 1

   N - Channel       ReelSi1 Channel     
PSMN013-30MLC,115


NXP Semiconductors MOSFET N-channel MOSFET logic level LFPAK33
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Nexperia 12980
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AUD 0.2357
Multiples of: 1

39 A27 V16.9 mOhmsN - Channel1.95 V1.3 V- 55 C+ 175 C38 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V8 nCEnhancement  
FDC6312P


SOT-23-6L MOSFETs ROHS
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TECH PUBLIC 12973
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AUD 0.1331
Multiples of: 5

                   
S8N10


100V 6.5A 110mΩ 3V N Channel SOT-89-3L MOSFETs ROHS
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HL 12968
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AUD 0.0506
Multiples of: 10

                   
SSM3J328R,LF


P-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F
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Toshiba 12968
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AUD 0.0662
Multiples of: 10

- 6 A- 20 V47.4 mOhmsP - Channel8 V- 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 23F - 3ReelSi1 Channel- 1.5 V12.8 nCEnhancement  
40N06D


60V 40A 12mΩ 2.5V N Channel PDFN-8(3x3) MOSFETs ROHS
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HL 12964
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AUD 0.099
Multiples of: 5

                   
DMN3053L-7


MOSFET 30V N-Ch Enh FET 12Vgss 0.76W 676pF
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Diodes Incorporated 12813
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AUD 0.0771
Multiples of: 5

4 A30 V45 mOhmsN - Channel 600 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V17.2 nCEnhancement  
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