MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP260NPBF


MOSFET N Trench 200V 50A 4V @ 250uA 40 mΩ @ 28A,10V TO-247 (AC) RoHS
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Infineon 12908
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AUD 0.8926
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   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
IRFS4321TRL7PP


International Rectifier MOSFET MOSFET N-CH 150V 86A D2PAK
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Infineon 12901
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AUD 3.3349
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86 A150 V11.7 mOhmsN - Channel30 V3 V- 55 C+ 175 C350 WSmd/SmtD2PAK - 7ReelSi1 Channel30 V71 nCEnhancement  
DMN601DMK-7


MOSFET Dual N-Channel
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Diodes Incorporated 12889
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AUD 0.2216
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305 mA60 V4 OhmsN - Channel 1.4 V- 65 C+ 150 C225 mWSmd/SmtSOT - 26 - 6ReelSi2 Channel20 V304 nCEnhancement  
IRL6342TRPBF


Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
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Infineon 12884
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AUD 0.3681
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            Hexfet®      
IPD70N03S4L04ATMA1


MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2
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Infineon 12876
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AUD 0.7724
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70 A30 V3.6 mOhmsN - Channel 1 V- 55 C+ 175 C68 WSmd/SmtTO - 252 - 3ReelSi1 Channel16 V48 nCEnhancementAec - Q101 
EM6K7T2CR


Mosfet Array 2 N-Channel (Dual) 20V 200mA (Ta) 150mW Surface Mount EMT6
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ROHM 12871
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AUD 0.1066
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200 mA20 V1.2 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V-Enhancement  
TPN6R303NC,LQ(S


30V 20A 19W 6.3mΩ@10V,10A 2.3V@200uA N Channel TSON-8(3.1x3.1) MOSFETs ROHS
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Toshiba 12871
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AUD 0.164
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IPD70R1K4P7SAUMA1


Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
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Infineon 12867
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AUD 0.2791
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            Coolmos      
2N7002KQ-13


Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.37W; SOT23
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Diodes Incorporated 12862
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AUD 0.0302
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RTF016N05TL


N-Channel 45 V 1.6A (Ta) 320mW (Ta) Surface Mount TUMT3
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ROHM 12843
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AUD 0.1806
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1.6 A45 V190 mOhmsN - Channel 500 mV- 55 C+ 150 C0.8 WSmd/SmtTUMT - 3ReelSi1 Channel4.5 V2.3 nCEnhancement  
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