MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFS4310ZTRLPBF


MOSFET N Trench 100V 120A 4V @ 150uA 6 mΩ @ 75A,10V TO-263-2 RoHS
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Infineon 12047
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AUD 1.5533
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127 A100 V4.8 mOhmsN - Channel    250 WSmd/SmtD2PAKReelSi1 Channel20 V120 nC   
Hot RD3L150SNTL1


MOSFET Nch 60V 15A TO-252 (DPAK)
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ROHM 12010
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AUD 0.4841
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15 A60 V40 mOhmsN - Channel 1 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V18 nCEnhancement  
FDD8778


MOSFET 25V N-Channel PowerTrench MOSFET
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ON Semiconductor 11987
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AUD 0.542
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35 A25 V11.6 mOhmsn - channel  - 55 C+ 175 C39 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
IPB065N03LGATMA1


MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
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Infineon 11974
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AUD 0.7312
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50 A30 V5.4 mOhmsn - channel 1 V- 55 C+ 175 C56 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V11 nCenhancement optimos
STP65NF06


Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; TO220-3
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STMicroelectronics 11929
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AUD 0.8467
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IRFR010PBF-BE3


N-Channel 50V 8.2A (Tc) 25W (Tc) Surface Mount D-PAK (TO-252AA)
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Vishay 11888
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AUD 1.0577
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8.2 A50 V200 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTDPAK - 3 (TO - 252 - 3)TubeSi1 Channel- 20 V , 20 V6.7 nCEnhancement  
BSP315PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -1.17A; 1.8W; PG-SOT223
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Infineon 11091
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AUD 0.3661
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            Sipmos      
2SK3018


MOSFET SOT23 RoHS
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TWGMC 10330
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AUD 0.0206
Multiples of: 50

                   
2N7002BKVL


MOSFET 2N7002BK/TO-236AB/REEL 11" Q3/
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Nexperia 6831
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AUD 0.0361
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350 mA60 V1 OhmsN - Channel 1.1 V- 55 C+ 150 C440 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V600 pCEnhancement  
RUM002N05T2L


MOSFET TRANS MOSFET NCH 50V 0.2A 3PIN
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ROHM 6120
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AUD 0.0486
Multiples of: 10

   N - Channel     Smd/SmtVMT - 3Reel       
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