MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDD1600N10ALZ


Fairchild Semiconductor MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND
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ON Semiconductor 12799
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AUD 1.0937
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6.8 A100 V175 mOhmsN - Channel 2.8 V- 55 C+ 150 C14.9 WSmd/SmtDPAK - 3ReelSi1 Channel 3.61 nC  Powertrench
DMN2053UW-7


MOSFET MOSFET BVDSS: 8V 24V SOT323 T&R 3K
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Diodes Incorporated 12768
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AUD 0.1351
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           Cut Tape       
SIR846BDP-T1-RE3


MOSFET N-CHANNEL 100-VD-S PowerPAK SO-8
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Vishay 12746
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AUD 1.0136
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65.8 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSMD/SMTPOWERPAK - SO - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V34.5 nCEnhancement TrenchFET, PowerPAK
RS1L120GNTB


N-Channel 60 V 12A (Ta), 36A (Tc) 3W (Ta) Surface Mount 8-HSOP
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ROHM 12710
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AUD 1.1775
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36 A60 V12.7 mOhmsN - Channel 1.3 V- 55 C+ 150 C27 WSmd/SmtHSOP - 8Cut TapeSi1 Channel20 V26 nCEnhancement  
SP2006KT7


SOT-723 MOSFETs ROHS
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Siliup 12707
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AUD 0.0118
Multiples of: 50

                   
DMP3068L-7


MOSFET 30V P-Ch Enh Mode 72mOhm -10V -3.9A
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Diodes Incorporated 11838
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AUD 0.085
Multiples of: 5

3.3 A30 V72 mOhmsP - Channel 500 mV- 55 C+ 150 C1.2 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V15.9 nCEnhancement  
IRLML6402


SOT-23 MOSFETs ROHS
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Hottech 11067
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AUD 0.0486
Multiples of: 10

                   
LBSS139LT1G


50V 0.2A 225mW 3.5O@5V,200mA N Channel SOT-23 MOSFETs ROHS
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Leshan 7857
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AUD 0.0155
Multiples of: 50

                   
NVMFD6H840NLT1G


Power MOSFET Dual N-Channel 80V 74A 6.9mOhm 8-Pin DFN Surface Mount T/R
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ON Semiconductor 5870
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AUD 1.8282
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74 A80 V6.9 mOhmsN - Channel 2 V- 55 C+ 175 C90 WSmd/SmtDFN - 8Cut TapeSi1 Channel20 V32 nCEnhancementAec - Q101 
SI7115DN-T1-GE3


MOSFET 150V 8.9A 52W 295mohm @ 10V
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Vishay 5820
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AUD 1.3759
Multiples of: 1

8.9 A150 V295 mOhmsP - Channel 4 V- 50 C+ 150 C52 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V27.5 nCEnhancement TrenchFET
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