MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDT014L


MOSFET N-Ch LL FET Enhancement Mode
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ON Semiconductor 11640
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AUD 0.7214
Multiples of: 4000

2.8 A60 V170 mOhmsN - Channel  - 65 C+ 150 C3 WSmd/SmtSOT - 223ReelSi1 Channel20 V Enhancement  
NCV8406ASTT1G


ON Semiconductor Gate Drivers 65V, SMARTFET
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ON Semiconductor 11640
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AUD 0.8493
Multiples of: 1

      - 40 C+ 150 C1.25 WSmd/SmtSOT - 223 - 4ReelSi    Aec - Q100 
TSM500P02DCQ RFG


MOSFET -20V -4.7A Dual P-Channel Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 11640
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AUD 0.8615
Multiples of: 1

           Cut Tape       
NCV8406ASTT3G


ON Semiconductor MOSFET 65V SMARTFET
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ON Semiconductor 11640
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AUD 0.9829
Multiples of: 4000

3.8 A70 V210 mOhmsN - Channel    1.31 WSmd/SmtSOT - 223 - 3ReelSi1 Channel   Aec - Q101 
IPB042N10N3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
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Infineon 11640
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AUD 1.4286
Multiples of: 1000

            optimos 3      
IRF3007STRLPBF


Infineon IR MOSFET MOSFET 75V D2PAK
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Infineon 11640
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AUD 1.443
Multiples of: 800

                   
STB80NF10T4


MOSFET N-Ch 100 Volt 80 Amp
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STMicroelectronics 11640
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AUD 1.6696
Multiples of: 1000

80 A100 V15 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtD2PAKReelSi1 Channel10 V135 nCEnhancement Stripfet
IRFH7084TRPBF


N-Channel 40 V 100A (Tc) 156W (Tc) Surface Mount 8-PQFN (5x6)
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Infineon 11620
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AUD 0.8401
Multiples of: 1

265 A40 V950 uOhmsN - Channel20 V3.9 V- 55 C+ 150 C Smd/SmtPQFN - 8 5X6ReelSi1 Channel20 V127 nCEnhancement Strongirfet
IRF9317TRPBF


Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
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Infineon 99
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AUD 0.7876
Multiples of: 1

16 A30 V10.2 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi 20 V31 nC   
IRFZ44ZPBF


Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; TO220AB
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Infineon 0
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AUD 0.7634
Multiples of: 1

51 A55 V13.9 mOhmsN - Channel    80 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V29 nC   
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