MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4485


MOSFET P Trench 40V 10A 2.5V @ 250uA 15 mΩ @ 10A,10V SOP-8_150mil RoHS
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Alpha & Omega 12396
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AUD 0.2986
Multiples of: 5

                   
BSP170P


SOT-223 MOSFETs ROHS
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TECH PUBLIC 12395
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AUD 0.1998
Multiples of: 5

                   
FQD17P06TM


Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
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ON Semiconductor 12395
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AUD 0.7142
Multiples of: 1

            Qfet®      
SPD30P06P G


Infineon Technologies MOSFET P-Ch -60V -30A DPAK-2
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Infineon 12394
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AUD 0.857
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- 30 A- 60 V75 mOhmsP - Channel 2.1 V- 55 C+ 175 C125 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V32 nCEnhancement Sipmos
FDC6320C


MOSFET SSOT-6 COMP N-P-CH
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ON Semiconductor 12367
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AUD 0.405
Multiples of: 1

220 mA , 120 mA25 V10.6 Ohmsn and p - channel  - 55 C+ 150 C900 mWsmd/smtSSOT - 6Reelsi2 channel8 V enhancement  
BSS214NW H6327


Infineon Technologies MOSFET N-Ch 20V 1.5A SOT-323-3
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Infineon 12355
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AUD 0.0768
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1.5 A20 V106 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 323 - 3ReelSi1 Channel12 V800 pCEnhancement  
SI1442DH-T1-BE3


N-Channel 12V 4A (Ta) 1.56W (Ta) Surface Mount SC-70-6
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Vishay 12346
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AUD 0.1205
Multiples of: 1

4 A12 V20 mOhmsN - Channel 1 V- 55 C+ 150 C1.56 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 8 V , + 8 V33 nCEnhancement TrenchFET
BSS138LT3G-ES


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 12340
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AUD 0.0112
Multiples of: 10

                   
S8205A


MOSFET 2 N Channel (Dual) 20V 5A (Tj) 1V @ 250uA 25 mΩ @ 5A,4V SOT-23-6 RoHS
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Hottech 12339
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AUD 0.0371
Multiples of: 1

                   
Hot IRFU420PBF


N-Channel 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
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Vishay 12312
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AUD 0.7552
Multiples of: 1

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