MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4936ADY-T1-E3


30V 4.4A 1.1W 36mO@10V,5.9A 2 N-Channel SOIC-8 MOSFETs ROHS
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Vishay 15900
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AUD 1.2571
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5.9 A30 V36 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel10 V13 nCEnhancement Trenchfet
HYG210P06LQ1D


60V 40A 19mΩ@10V,20A 60W 1.7V@250uA 60pF@25V P Channel 3.679nF@25V 90nC@10V -55℃~+175℃@(Tj) TO-252 MOSFETs ROHS
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HuaYi 15888
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AUD 0.2402
Multiples of: 5

                   
IPN60R2K1CEATMA1


Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223
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Infineon 15882
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AUD 0.2167
Multiples of: 1

            Coolmos Ce      
IPD50N04S4-08


MOSFET N-Channel 40V MOSFET
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Infineon 15877
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AUD 0.4334
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50 A40 V7.2 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V22.4 nCEnhancementAec - Q101Optimos
HYG015N04LS1C2


40V 150A 1.4mΩ@10V,20A 75W 1.9V@250uA 33pF@25V N Channel 4.05nF@25V 27nC@4.5V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 15869
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AUD 0.5153
Multiples of: 1

                   
SI9945BDY-T1-GE3


MOSFET 60V 5.3A 3.1W 58mohm @ 10V
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Vishay 15863
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AUD 1.0478
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5.3 A60 V58 mOhmsN - Channel 1 V- 55 C+ 150 C3.1 WSmd/SmtSOIC - 8 NarrowReelSi2 Channel10 V13 nCEnhancement Trenchfet
PMPB19XP,115


NXP Semiconductors MOSFET
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Nexperia 15855
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AUD 0.2589
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- 10.3 A- 20 V19 mOhmsP - Channel - 0.68 V- 55 C+ 150 C12.5 WSmd/SmtDFN - 2020MD - 6ReelSi1 Channel 28.8 nCEnhancement  
AOD403-HXY


30V 70A 90W 7.2mΩ@10V,20A P Channel TO-252-2L MOSFETs ROHS
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HXY MOS 15852
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AUD 0.2291
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DMN61D9UWQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 15837
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AUD 0.0772
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340 mA60 V1.2 OhmsN - Channel 500 mV- 55 C+ 150 C440 mW  Cut TapeSi1 Channel5 V400 pCEnhancementAec - Q101 
IRFI530NPBF


Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
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Infineon 15830
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AUD 1.0951
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11 A100 V110 mOhmsN - Channel    33 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V29.3 nC   
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