MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN6R1-40HLX


MOSFETs PSMN6R1-40HL/SOT1205/LFPAK56D
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Nexperia 15560
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AUD 1.0245
Multiples of: 1

40 A40 V7.2 mOhmsN - Channel 2.1 V- 55 C+ 175 C64 WSMD/SMTLFPAK - 56D - 8Reel , Cut TapeSi2 Channel- 10 V , + 10 V22.2 nCEnhancement  
BSS138PW


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 15520
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AUD 0.0203
Multiples of: 20

                   
NTZD3152PT1G


MOSFET -20V -430mA Dual P-Channel
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ON Semiconductor 15520
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AUD 0.112
Multiples of: 4000

430 mA20 V2 Ohms , 2 OhmsP - Channel 450 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel1.8 V1.7 nC , 1.7 nCEnhancement  
IRF7815TRPBF


Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
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Infineon 15520
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AUD 0.9182
Multiples of: 4000

5.1 A150 V34 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V25 nC   
IRFS52N15DTRRP


N-Channel 150 V 51A (Tc) 3.8W (Ta), 230W (Tc) Surface Mount D2PAK
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Infineon 15520
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AUD 1.9375
Multiples of: 1

            hexfet®      
IPB180P04P403ATMA1


Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) TO-263
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Infineon 15520
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AUD 2.7009
Multiples of: 1

           Reel       
2N7002K


60V 340mA 1.3O@10V,500mA 350mW N Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 15471
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AUD 0.012
Multiples of: 50

                   
Hot IRF7343TRPBF


MOSFET N & P Trench 55V 4.7A,3.4A 1V @ 250uA 50 mΩ @ 4.7A,10V SOIC-8_150mil RoHS
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Infineon 15456
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AUD 0.4249
Multiples of: 1

4.7 A55 V65 mOhmsN And P - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC   
IRFP250MPBF


MOSFET N Trench 200V 30A 4V @ 250uA 75 mΩ @ 18A,10V TO-247 (AC) RoHS
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Infineon 15229
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AUD 0.7695
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247AC - 3Tube       
STH145N8F7-2AG


MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
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STMicroelectronics 14550
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AUD 1.9107
Multiples of: 1000

90 A80 V4 mOhmsn - channel 2.5 V- 55 C+ 175 C200 Wsmd/smtH2PAK - 3 si1 channel+/- 20 V96 nCenhancement  
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