MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4616(UMW)


SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Youtai 15912
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AUD 0.0901
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SI4936ADY-T1-E3


30V 4.4A 1.1W 36mO@10V,5.9A 2 N-Channel SOIC-8 MOSFETs ROHS
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Vishay 15900
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AUD 1.2571
Multiples of: 1

5.9 A30 V36 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel10 V13 nCEnhancement Trenchfet
HYG210P06LQ1D


60V 40A 19mΩ@10V,20A 60W 1.7V@250uA 60pF@25V P Channel 3.679nF@25V 90nC@10V -55℃~+175℃@(Tj) TO-252 MOSFETs ROHS
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HuaYi 15888
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AUD 0.2402
Multiples of: 5

                   
FDN327N(UMW)


SOT-23 MOSFETs ROHS
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Youtai 15887
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AUD 0.0299
Multiples of: 20

                   
HYG015N04LS1C2


40V 150A 1.4mΩ@10V,20A 75W 1.9V@250uA 33pF@25V N Channel 4.05nF@25V 27nC@4.5V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 15869
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AUD 0.5153
Multiples of: 1

                   
FCD7N60TM


MOSFET N-CH/600V/7A SuperFET
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ON Semiconductor 15868
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AUD 1.6517
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7 A600 V530 mOhmsN - Channel  - 55 C+ 150 C83 WSmd/SmtDPAKReelSi1 Channel30 V Enhancement  
SP000929186


MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon 15856
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AUD 0.0657
Multiples of: 1

170 mA60 V5.8 OhmsP - Channel 2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V1.5 nCEnhancement  
IRF9388TRPBF


MOSFET P Trench 30V 12A 2.4V @ 25uA 8.5 mΩ @ 12A,20V SO-8_3.9mm RoHS
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Infineon 15854
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AUD 0.5922
Multiples of: 1

- 12 A- 30 V10 mOhmsP - Channel25 V- 1.8 V- 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel25 V18 nCEnhancement  
AOD403-HXY


30V 70A 90W 7.2mΩ@10V,20A P Channel TO-252-2L MOSFETs ROHS
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HXY MOS 15852
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AUD 0.2291
Multiples of: 5

                   
SI2307CDS-T1-GE3


P-Channel 30 V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
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Vishay 15825
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AUD 0.1157
Multiples of: 5

3.5 A30 V88 mOhmsP - Channel 1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement Trenchfet
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