MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML6402TRPBF


Transistor: P-MOSFET; unipolar; -20V; -2.2A; 1.3W; SOT23
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Infineon 20346
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AUD 0.4991
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   P Channel      SOT - 23Reel       
AON7522E


MOSFET N-CH 30V 21A 8DFN
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Alpha & Omega 16325
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AUD 0.2476
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           -       
PMV42ENER


MOSFET PMV42ENE/TO-236AB/REEL 7" Q3/T
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Nexperia 16292
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AUD 0.1351
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           Cut TapeSi      
AON7524


MOSFET DFN_3x3mm RoHS
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Alpha & Omega 16199
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AUD 0.3049
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HSBB0012


MOSFET N Channel 100V 20A 2.5V @ 250uA 105mΩ @ 5A,10V PRPAK3*3 RoHS
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HUASHUO 16038
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AUD 0.1508
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SI4431CDY-T1-GE3


P-Channel 30 V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SOIC
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Vishay 15938
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AUD 0.4154
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   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel       
BC2301(2.8A) 2301


SOT-23-3L MOSFETs ROHS
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Hong Kong Chuangji 15520
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AUD 0.0164
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Hot IRF5210STRLPBF


MOSFET P Trench 100V 38A 4V @ 250uA 60 mΩ @ 38A,10V TO-263-2 RoHS
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Infineon 15282
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AUD 0.9078
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            Hexfet®      
IRF5305STRLPBF


MOSFET P Trench 55V 31A 4V @ 250uA 60 mΩ @ 16A,10V TO-263-2 RoHS
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Infineon 14744
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AUD 1.2768
Multiples of: 800

   P Channel      D2PAKReel       
IPD122N10N3GATMA1


MOSFET TRENCH >=100V
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Infineon 11619
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AUD 0.9177
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59 A100 V12.2 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V26 nCEnhancement Optimos
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