MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BS170


mosfet n trench 60v 500ma 3v @ 1ma 5 @ 200ma,10v to-92 (to-92-3) rohs
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ON Semiconductor 16708
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AUD 0.1121
Multiples of: 250

                   
SI2305A


MOSFET P Trench 20V 4.2A 500mV @ 250uA（Min） 65 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai 16703
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AUD 0.0309
Multiples of: 20

                   
ZVP3306A


P-Channel 60 V 160mA (Ta) 625mW (Ta) Through Hole TO-92
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Diodes Incorporated 16689
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AUD 0.44
Multiples of: 1

160 mA60 V14 OhmsP - Channel 1.5 V- 55 C+ 150 C625 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
FDMS8820


Fairchild Semiconductor MOSFET NCh 30V 116A 2.4mOhm
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ON Semiconductor 16683
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AUD 0.8784
Multiples of: 1

116 A30 V2.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C78 WSmd/SmtPOWER - 56 - 8ReelSi  88 nCEnhancement Powertrench
IRLML6401


MOSFET P Channel 16V 3A 1.5V @ 250uA 110mO @ 3A,4.5V SOT-23 RoHS
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Shikues 16663
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AUD 0.0395
Multiples of: 10

                   
Hot IRFR9120NTRPBF


MOSFET P Trench 100V 6.6A 4V @ 250uA 480 mΩ @ 3.9A,10V TO-252-2 (DPAK) RoHS
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Infineon 16635
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AUD 0.2946
Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtDPAKReel       
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.8A; 0.2W; SOT23
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ON Semiconductor 16600
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AUD 0.044
Multiples of: 1

                   
FDMA86551L


MOSFET 60V Single N-Channel PowerTrench MOSFET
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ON Semiconductor 16598
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AUD 0.7076
Multiples of: 1

7.5 A60 V35 mOhmsN - Channel 1.8 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6 2X2ReelSi1 Channel 12 nC  Powertrench
SI7137DP-T1-GE3


Vishay Semiconductors MOSFET -20V 1.95mOhm10V 60A P-Ch G-III
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Vishay 16481
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AUD 0.6681
Multiples of: 1

           -       
SI2309CDS-T1-E3


Vishay Semiconductors MOSFET 60V 1.6A 1.7W 345mohm 10V
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Vishay 12622
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AUD 0.2545
Multiples of: 1

1.2 A- 60 V345 mOhmsP - Channel20 V - 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Reel    Enhancement  
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