MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BS170


mosfet n trench 60v 500ma 3v @ 1ma 5 @ 200ma,10v to-92 (to-92-3) rohs
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ON Semiconductor 16708
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AUD 0.1202
Multiples of: 250

                   
SI2305A


MOSFET P Trench 20V 4.2A 500mV @ 250uA（Min） 65 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai 16703
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AUD 0.0309
Multiples of: 20

                   
FDMS8820


Fairchild Semiconductor MOSFET NCh 30V 116A 2.4mOhm
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ON Semiconductor 16683
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AUD 0.9341
Multiples of: 1

116 A30 V2.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C78 WSmd/SmtPOWER - 56 - 8ReelSi  88 nCEnhancement Powertrench
IRLML6401


MOSFET P Channel 16V 3A 1.5V @ 250uA 110mO @ 3A,4.5V SOT-23 RoHS
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Shikues 16663
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AUD 0.0395
Multiples of: 10

                   
SN7002W H6327


Infineon Technologies MOSFET N-Ch 60V 230mA SOT-323-3
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Infineon 16662
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AUD 0.0663
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230 mA60 V2.3 OhmsP - Channel 1.4 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT - 323Reel-1 Channel+/- 20 V1 nCEnhancement  
IAUC100N04S6L020ATMA1


MOSFET MOSFET_20V 40V
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Infineon 16647
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AUD 0.6984
Multiples of: 1

           Cut Tape       
STP7NK80Z


Transistor: N-MOSFET; unipolar; 800V; 3.3A; 125W; TO220-3
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STMicroelectronics 16635
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AUD 1.0954
Multiples of: 1

            Supermesh      
BSS131H6327XT


MOSFET SIPMOS Small Signal Transistor
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Infineon 16593
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AUD 0.0908
Multiples of: 1

110 mA240 V14 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V2.1 nCEnhancementAec - Q101 
DMN61D8L-7


Diodes Incorporated MOSFET 60V N-Ch Enh FET 20Vgss SOT23
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Diodes Incorporated 16585
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AUD 0.2287
Multiples of: 1

470 mA60 V2.4 OhmsN - Channel 1.3 V- 55 C+ 150 C390 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 12 V0.74 nCEnhancement  
IPD50N04S4-08


MOSFET N-Channel 40V MOSFET
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Infineon 16576
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AUD 0.461
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50 A40 V7.2 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V22.4 nCEnhancementAec - Q101Optimos
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