MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD86N3LH5


STMicroelectronics MOSFET N-channel 30 V
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STMicroelectronics 16975
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AUD 0.7712
Multiples of: 2500

80 A30 V5 mOhmsN - Channel22 V - 55 C+ 175 C70 WSmd/SmtDPAK - 3ReelSi1 Channel22 V EnhancementAec - Q101 
FDD86250-F085


MOSFET 40V 15A DPAK N-Chnl PowerTrench
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ON Semiconductor 16975
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AUD 1.5821
Multiples of: 1

50 A150 V22 mOhmsN - Channel 2 V- 55 C+ 175 C160 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V28 nCEnhancementAEC - Q101PowerTrench
SH8K32GZETB


MOSFET 4V DRIVE NCH+NCH
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ROHM 16944
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AUD 1.1785
Multiples of: 1

4.5 A60 V65 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V7 nCEnhancement  
FQD7P06TM


MOSFET 60V P-Channel QFET
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ON Semiconductor 16851
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AUD 0.4651
Multiples of: 1

5.4 A60 V450 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252ReelSi1 Channel25 V Enhancement  
NTD2955T4G


ON Semiconductor MOSFET -60V -12A P-Channel
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ON Semiconductor 16813
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AUD 0.4324
Multiples of: 1

- 12 A- 60 V155 mOhmsP - Channel20 V - 55 C+ 175 C55 WSmd/SmtDPAK - 3Reel    Enhancement  
BSS138A-TP


MOSFET N-Ch Enh FET 50Vds 0.22A 20Vgs 0.35W
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Micro Commercial Components (MCC) 16738
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AUD 0.078
Multiples of: 1

0.22 A50 V3 OhmsN - Channel 0.8 V- 55 C+ 150 C0.35 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
2N7002BK


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 16722
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AUD 0.0108
Multiples of: 20

                   
BSS138


50V 0.22A 0.35W 3.50Ω@10V,0.22A 1.5V@1mA 6pF@25V N Channel 27pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 16296
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AUD 0.0183
Multiples of: 50

                   
CJAB35P03


MOSFET P Channel 30V 35A 2.5V @ 250uA 15mO @ 12A,10V PDFNWB3.3x3.3-8L RoHS
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Changjing Electronics Technology 15869
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AUD 0.2374
Multiples of: 5

                   
SI8472DB-T2-E1


MOSFET 20V 4.5A 1.8W 44mOhms @ 4.5V
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Vishay 223
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AUD 0.2671
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT - 4Reel       
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