MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2305A


MOSFET P Trench 20V 4.2A 500mV @ 250uA（Min） 65 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai 75931
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AUD 0.0241
Multiples of: 20

                   
RQ6L020SPTCR


MOSFET Pch -60V 2A 1.25W SOT-457T
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ROHM 17399
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AUD 0.6616
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2 A60 V210 mOhmsP - Channel - 3 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 475T - 6Cut Tape 1 Channel20 V7.2 nCEnhancement  
IRFBE30LPBF


MOSFET N-Chan 800V 4.1 Amp
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Vishay 17382
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AUD 2.0221
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4.1 A800 V3 OhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 262 - 3TubeSi1 Channel- 20 V , 20 V78 nCEnhancement  
BSC072N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
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Infineon 17365
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AUD 1.1987
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            Optimos 5      
RUF025N02TL


MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 2A
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ROHM 17364
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AUD 0.3363
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2.5 A20 V39 mOhmsN - Channel    800 mWSmd/SmtTUMT - 3ReelSi1 Channel10 V5 nCEnhancement  
SUD50P10-43L-BE3


MOSFET 100V P-CH MOSFET (D-S) 17
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Vishay 17363
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AUD 2.0862
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37.1 A100 V43 mOhmsP - Channel 3 V- 55 C+ 175 C136 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V54 nCEnhancement  
DMN22M5UFG-7


MOSFET MOSFET BVDSS: 8V 24V PowerDI3333-8 T&R 2K
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Diodes Incorporated 17336
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AUD 0.5956
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IRFR420TRPBF


N-Channel 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 17297
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AUD 0.5481
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReel       
SI2302


20V 4.3A 1.2W 72mΩ@4.5V,3.6A 700mV@250uA 120pF@10V N Channel 300pF@10V 5.4nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 15277
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AUD 0.0171
Multiples of: 50

                   
TQM84KCX RFG


MOSFETs -60V, -0.19A, Single P-Channel Small-signal MOSFETs
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Taiwan Semiconductor 14456
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AUD 0.0566
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190 mA60 V7 OhmsP - Channel 2.5 V- 55 C+ 150 C403 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.9 nCEnhancementAEC - Q101 
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