MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQE013N04LM6CGSCATMA1


MOSFET
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Infineon 17214
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AUD 1.6989
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31 A40 V1.35 mOhmsN - Channel 2 V- 55 C+ 175 C2.5 WSMD/SMTWHTFN - 9Reel , Cut TapeSi1 Channel- 20 V , + 20 V41 nCEnhancement  
DMN2550UFA-7B


Diodes Incorporated MOSFET 20V N-Ch Enh FET 8 VGS 52.5pF 0.88nC
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Diodes Incorporated 17209
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AUD 0.0728
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600 mA20 V450 mOhmsN - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtX2 - DFN0806 - 3ReelSi1 Channel8 V0.88 nCEnhancement  
NCE3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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NCE Power 17207
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AUD 0.0445
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SI3493BDV-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 17197
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AUD 0.6731
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8 A20 V27.5 mOhmsP - Channel 900 mV- 55 C+ 150 C2.97 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V26.2 nCEnhancement  
IRF9640PBF


MOSFET RECOMMENDED ALT 844-IRF9640PBF
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Vishay 17168
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AUD 0.9992
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11 A200 V500 mOhmsP - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V44 nCEnhancement  
BSC100N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 41A; 30W; PG-TDSON-8
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Infineon 17166
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AUD 0.4222
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            Optimos 3      
ZVN3310FTA


SOT23 MOSFETs ROHS
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TECH PUBLIC 17149
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AUD 0.107
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NTZD3154NT1G


SOT563 MOSFETs ROHS
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TECH PUBLIC 17136
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AUD 0.1223
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IRLR2905


TO-252-2 MOSFETs ROHS
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TECH PUBLIC 17135
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AUD 0.2462
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2N7002


SOT-23 MOSFETs ROHS
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Youtai 13483
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AUD 0.0089
Multiples of: 50

                   
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