MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6J212FE,LF


Toshiba MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW
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Toshiba 17061
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AUD 0.2337
Multiples of: 1

- 4 A- 20 V94 mOhmsP - Channel - 0.3 v to - 1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 6ReelSi1 Channel8 V14.1 nC   
DMP1045U-7


12V 4A 31mO@4.5V,4A 800mW P Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 17042
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AUD 0.0726
Multiples of: 10

4.3 A12 V31 mOhmsP - Channel 300 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V15.8 nCEnhancement  
DMN62D0LFD-7


N-Channel 60 V 310mA (Ta) 480mW (Ta) Surface Mount X1-DFN1212-3
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Diodes Incorporated 17039
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AUD 0.0698
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310 mA60 V2 OhmsN - Channel 1 V- 55 C+ 150 C480 mWSmd/SmtX1 - DFN1212 - 3Cut TapeSi1 Channel20 V500 pCEnhancement  
BSS816NW H6327


Infineon Technologies MOSFET N-Ch 20V 1.4A SOT-323-3
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Infineon 17029
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AUD 0.0721
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1.4 A20 V107 mOhmsN - Channel 300 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 323 - 3ReelSi1 Channel8 V600 pCEnhancement  
WPM2015-3/TR


20V 2.4A 110mΩ@4.5V,2.7A 1.1W 1V@250uA P Channel SOT-23-3 MOSFETs ROHS
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Yongyutai Electronics 17023
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AUD 0.0392
Multiples of: 10

                   
IRF7324TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 17020
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AUD 0.2612
Multiples of: 5

                   
BSZ0702LSATMA1


MOSFET TRENCH 40<-<100V
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Infineon 17008
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AUD 0.784
Multiples of: 1

40 A60 V4.4 mOhmsN - Channel 1.7 V- 55 C+ 150 C69 WSMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V18 nCEnhancement  
DMT6015LSS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 16994
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AUD 0.4714
Multiples of: 1

         Smd/SmtSO - 8Cut TapeSi      
SI1965DH-T1-BE3


Mosfet Array 2 P-Channel (Dual) 12V 1.14A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay 16975
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AUD 0.2519
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1.3 A12 V390 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 8 V , + 8 V4.2 nCEnhancement  
Hot IRF4905PBF


MOSFET P Trench 55V 74A 4V @ 250uA 20 mΩ @ 38A,10V TO-220 (TO-220-3) RoHS
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Infineon 16705
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AUD 0.5689
Multiples of: 1

74 A55 V20 mOhmsP - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
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